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    L14G1 PHOTOTRANSISTOR Search Results

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    OF LED 55B

    Abstract: Phototransistor L14G3 application L14G1 l14g1 equivalent L14G2 L14G3 L14G3 phototransistor Phototransistor L14G3 L14G2 application note L14G3 equivalent
    Text: HERMETIC SILICON PHOTOTRANSISTOR L14G1 L14G2 L14G3 PACKAGE DIMENSIONS 0.230 5.84 0.209 (5.31) 0.195 (4.95) 0.178 (4.52) 0.255 (6.47) 0.225 (5.71) 0.030 (0.76) NOM 0.500 (12.7) MIN 0.100 (2.54) 0.050 (1.27) SCHEMATIC 2 1 (CONNECTED TO CASE) COLLECTOR 3 3


    Original     		PDF L14G1 L14G2 L14G3 L14G1/L14G2/L14G3 DS300307 OF LED 55B Phototransistor L14G3 application L14G1 l14g1 equivalent L14G2 L14G3 L14G3 phototransistor Phototransistor L14G3 L14G2 application note L14G3 equivalent

    L14G1

    Abstract: l14g1 equivalent infrared led L14G2 circuit design L14G2 application note 1N6266 Phototransistor L14G2 fairchild make INFRARED EMITTING DIODE TO18 L14G1 phototransistor
    Text: 1N6266 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor 0.030 (0.76) NOM • Hermetically sealed package


    Original     		PDF 1N6266 1N6266 DS300278 L14G1 l14g1 equivalent infrared led L14G2 circuit design L14G2 application note Phototransistor L14G2 fairchild make INFRARED EMITTING DIODE TO18 L14G1 phototransistor

    L14F1 phototransistor datasheet

    Abstract: L14F1 PHOTOTRANSISTOR Phototransistor L14F1 Phototransistor L14G3 phototransistor 650 nm l14g1 equivalent Phototransistor L14G2 L14G3 phototransistor datasheet L14G3 phototransistor L14G1 phototransistor
    Text: Optoelectronics Hermetic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type TO-18 Detector Package (Convex Lens) BPW36 5 0.5 940 GaAs 1.00 – 30 100 Phototransistor


    Original     		PDF BPW36 BPW37 L14G1 L14G2 L14G3 L14P1 L14P2 L14C2 L14N1 L14N2 L14F1 phototransistor datasheet L14F1 PHOTOTRANSISTOR Phototransistor L14F1 Phototransistor L14G3 phototransistor 650 nm l14g1 equivalent Phototransistor L14G2 L14G3 phototransistor datasheet L14G3 phototransistor L14G1 phototransistor

    Phototransistor L14F1

    Abstract: Phototransistor L14F L14F1 phototransistor L14G1 phototransistor L14G3 phototransistor L14G2 Phototransistor L14G3 phototransistor 650 nm lens emitter phototransistor Infrared phototransistor TO18
    Text: Hermetic Silicon Photosensors TO-18 Detector Package Convex Lens 0.209 (5.31) 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 0.50 (12.7) MIN 0.020 (0.51) 3X Base 0.100 (2.54) 0.050 (1.27) Emitter Part VCE Number (V) Test Conditions Ee ␭p (mW/cm2) (nm) IC (ON)


    Original     		PDF BPW36 BPW37 L14G1 L14G2 L14G3 L14P1 L14P2 BPW38 L14F1 L14F2 Phototransistor L14F1 Phototransistor L14F L14F1 phototransistor L14G1 phototransistor L14G3 phototransistor Phototransistor L14G3 phototransistor 650 nm lens emitter phototransistor Infrared phototransistor TO18

    2R70

    Abstract: L14G3 L14G1 L14G1 phototransistor L14G2 L14G3 phototransistor ic iR light control L14G-1
    Text: Detector Specifications L14G1, L14G2, L14G3 Light Detector Planar Silicon Phototransistor T h e L14G1 th ro u g h L14G3 are high!}' sensitive NPN P la n a r Silicon P h ototransistors. T h ey are h o u se d in a T O -18 style herm etically sealed package with lens cap. T h e L 14G series is ideal fo r use in optoelectronic


    OCR Scan     		PDF L14G1, L14G2, L14G3 L14G1 L14G3 2R70 L14G1 phototransistor L14G2 L14G3 phototransistor ic iR light control L14G-1

    st 1086

    Abstract: L14G1 phototransistor L14G1 ST-1605 ST1087
    Text: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14G1/2/3 PACKAGE DIMENSIONS DESCRIPTION The L14G series is a silicon phototransister m ounted in a narrow angle, TO -18 package. FEATURES SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. A .225 .255 5.71 6.47


    OCR Scan     		PDF L14G1/2/3 ST1605 533mm T1082 ST1087 L14G1 LED55B) st 1086 L14G1 phototransistor L14G1 ST-1605 ST1087

    ST1083

    Abstract: L14G3 phototransistor L14G1 phototransistor st1086 ST108 st1084 Phototransistor L14G3 st1082 L14G1 L14G2
    Text: HERMETIC SILICON PHOTOTRANSISTOR BFIOELEClHftlf SCS L14G1/2/3 PACKAGE DIMENSIONS DESCRIPTION The L14G series is a silicon phototransister mounted in a narrow angle, TO-18 package. FEATURES SYMBOL A fa e ei h J k L oc INCHES MIN. MAX. .225 ,255 .016 .021 .209


    OCR Scan     		PDF L14G1/2/3 ST1333 ST1605 533mm) ST1083 ST1086 ST1084 LED55B) ST1085 ST1083 L14G3 phototransistor L14G1 phototransistor st1086 ST108 Phototransistor L14G3 st1082 L14G1 L14G2

    ST1083

    Abstract: No abstract text available
    Text: I HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14G1/2/3 PACKAGE DIMENSIONS DESCRIPTION The L14G series is a silicon phototransister mounted in a narrow angle, TO-18 package. - - - - - <pD - - - - J .— < ^ > 0 I — o A h * i I FEATURES SYMBOL A <f>b


    OCR Scan     		PDF L14G1/2/3 74bbfl51 ST1082 ST1087 ST1084 74bfc ST1086 ST1085 LED55B) ST1083

    drive circuit for L14G3

    Abstract: l14g2 L14G1 l14g3 telefunken ta 400 L14G3 phototransistor L14G1 phototransistor
    Text: TELEFUNKEN ELECTRONIC &R2DCni QOOaSRb S 2 5 2 P L14G1 S 2 5 3 P L14G2 S 2 5 4 P L14G3 17E D TTlILillFMJKtiKl electronic C/Mtivf'fechnotoO«« T - f h c[ Silicon NPN Epitaxial Planar Phototransistor Applications: Detector in electronic control and drive circuits


    OCR Scan     		PDF L14G1 L14G2 L14G3 20CHb drive circuit for L14G3 l14g3 telefunken ta 400 L14G3 phototransistor L14G1 phototransistor

    Phototransistor L14G3

    Abstract: st1084 L14G L14G1 l14g1 equivalent L14G3 ST108 st1082 L14G2 LED55B
    Text: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14G1/2/3 PACKAGE DIMENSIONS DESCRIPTION The L14G series is a silicon phototransister mounted in a narrow angle, TO-18 package. 0b-Q - SYM BOL FEATURES IN C H E S M ILL IM E T E R S MIN. MAX. MIN. MAX. 6.47


    OCR Scan     		PDF L14G1/2/3 ST1333 ST1605 ST1084 LED55B) Phototransistor L14G3 st1084 L14G L14G1 l14g1 equivalent L14G3 ST108 st1082 L14G2 LED55B

    L14GI

    Abstract: l14g1 equivalent L14G3 L14G3 equivalent L14G2 l14g2 equivalent
    Text: Detector Specifications L14G1, L14G2, L14G3 Light Detector Planar Silicon Phototransistor absolute m axim um ratings: P LAN E T h e L14GI th ro u g h L14G3 are highly sensitive NPN P lan ar Silicon P hototransistors. T hey are h o u se d in a T O -1 8 style herm etically sealed


    OCR Scan     		PDF L14G1, L14G2, L14G3 L14GI L14G3 LED55Bi IL14G l14g1 equivalent L14G3 equivalent L14G2 l14g2 equivalent

    ST1009

    Abstract: st1020 IN6266 L14G1 L14G1 phototransistor IRED L14G Phototransistor L14G2 st1332 1N6266
    Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE DIMENSIONS DESCRIPTION The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATING FEATURES G ood optical to m echanical alignm ent SYMBOL INCHES MIN. A MILLIMETERS MAX. MIN. .255 NOTES MAX.


    OCR Scan     		PDF 1N6266 1N6266 940nm ST1604 L14G1 L14G2 L14G1 L14G2 L14G1. IN6266 ST1009 st1020 L14G1 phototransistor IRED L14G Phototransistor L14G2 st1332

    Untitled

    Abstract: No abstract text available
    Text: [•13 GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE D I M E N S I O N S ^ D E S C R IP T IO N The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATIN G PLANE FEA TU R ES _ ST13 32 SYMBOL • Good optical to mechanical alignment


    OCR Scan     		PDF 1N6266 1N6266 940nm L14G1 L14G2 L14G1. 74bbfl51

    OSI photo detector

    Abstract: 1N6266
    Text: Emitter Specifications 1N6266 Infrared Emitter Gallium Arsenide Infrared Emitting Diode <i£•L -• •-A—— ■M a 1 t 00 *?' T he 1N6266 is a gallium-arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength o f 940


    OCR Scan     		PDF 1N6266 1N6266 L14G1. OSI photo detector

    Untitled

    Abstract: No abstract text available
    Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE DIMENSIONS DESCRIPTION The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATIN G FEATURES • Good optical to mechanical alignment SYMBOL IN C H ES MIN, A M ILLIM ETERS M AX MIN. N O TES


    OCR Scan     		PDF 1N6266 1N6266 940nm ST1017

    Phototransistor L14F

    Abstract: L14F L14G3 phototransistor
    Text: eq OPTOELECTRONICS HERMETIC SILICON INFRARED PHOTOSENSORS B V „ ,; R fic e p t io h Metal Can Convex Lens Pi« r * N u rrt t.» c î ¡ . 2 i» €. n i s 1 t i W! k ; it»« t"-, 'C E P ^ C Ì !• ;>r. |J/?S 1 i'iin nAl'jV! •t í a * Note:. P hototransistor


    OCR Scan     		PDF L14G1 L14G2 L14G3 L14P1 L14P2 L14F1 L14F2 100/te BPW36, BPW37, Phototransistor L14F L14F L14G3 phototransistor

    Untitled

    Abstract: No abstract text available
    Text: [ * 9 GaAs INFRARED EMITTING DIODE ipmutïiftiits 1N6266 The 1N6266 is a 940nm LED in a narrow angle, T M6 package. SEATIN G • Good optical io mechanical alignment SYMBOL A •8>b D Ü0D. a e, h .1 . k i. u JNCHES Ml» MAX. -255 .016 ,203 tao .021


    OCR Scan     		PDF 1N6266 1N6266 940nm ST19W 25mW/cjn2. L14G1 L14G2

    L14F1 PHOTOTRANSISTOR

    Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 PHOTOTRANSISTOR 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1

    2n5777 phototransistor

    Abstract: L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor LED55B photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2n5777 phototransistor L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2

    H15A1

    Abstract: H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 LED56 L14F2
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 H15A1 H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 L14F2

    L14F1 phototransistor

    Abstract: L14F1 npn photo transistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator LED55B 2N5777 A3-H11 2N5778 L14G3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 phototransistor L14F1 npn photo transistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator 2N5777 A3-H11 2N5778 L14G3

    L14F1 npn photo transistor

    Abstract: 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 npn photo transistor 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25

    opto isolator 4n35

    Abstract: GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 LED55B L14G1 phototransistor
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A l p = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . m W PAGE M A X . Ip CONT.


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 opto isolator 4n35 GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 L14G1 phototransistor

    Phototransistor L14G3 application

    Abstract: L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777
    Text: OPTOELECTRONICS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 MIN. PO@ lp=100mA 5.4mW 3.5mW 1.5mW 5.4mW 3.5 mW 1.5mW INFRARED EMITTERS FALL MAX. PEAK EMISSION RISE TIME Vp @ WAVELENGTH TIME lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC.


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 Phototransistor L14G3 application L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777