melody IC
Abstract: 8 sound effects generator IC 16-DIP HT2887 8050 s cmos sound generator d 9329 TOY SOUND sound effects chip SK 8050 S
Text: HOLTEK r r HT2887 Sound Effect and Melody Generator Features Auto power-off function Directly drive LED s or a piezo L O l or L 0 2 pad by m ask option 128-note melody PLA memory 256-note sound effect memory 128kHz system clock Minimum external components
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HT2887
128-note
256-note
128kHz
HT2887
120kn
melody IC
8 sound effects generator IC
16-DIP
8050 s
cmos sound generator
d 9329
TOY SOUND
sound effects chip
SK 8050 S
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intel 2102 Static RAM
Abstract: AM9102 intel 2102 AM9102BPC AM9102BD am91l02bpc AM9102APC AM9102BDM AM9102ADC 1024x1 static ram
Text: Am9102/Am91L02 FAMILY 1024x1 Static R/W Random Access Memories D IS T IN C T IV E C H A R A C T E R IS T IC S F U N C T IO N A L D E S C R IP T IO N • The A m 9 1 0 2 F a m ily o f 1 0 2 4 -b it s ta tic N -channel R A M s c o nta in s m em bers w ith cycle tim es ranging fro m 650ns to
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Am9102/Am91L02
1024x1
IM7552,
Am9102/Am91
100ns
intel 2102 Static RAM
AM9102
intel 2102
AM9102BPC
AM9102BD
am91l02bpc
AM9102APC
AM9102BDM
AM9102ADC
1024x1 static ram
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Untitled
Abstract: No abstract text available
Text: ThoniasBetts Power DIN Type F TYPE F FEMALE CONNECTOR WITH CODING DEVICE P hysical P roperties H o u s in g M a t e r ia l : PBT C o l o r : Beige F l a m m a b il it y : UL94V-0 I n se r tio n a n d W it h d r a w a l F o r c e : 75 N max. for 48 contacts: 50 N max. for 32 contacts
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UL94V-0
CTI275/CTI175M
FF48T12C
32-Pin
ZBL03C
ZBT12C
ZDL02C
ZDL03C
FF32ZDT12C
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Untitled
Abstract: No abstract text available
Text: ATMEL 43E CORP D B 1D7M177 QGG l b M b 7 QATÎ1 AT28MC020 T -H 6 -I3 Features • • • • • • • • • • • Fast Read Access Time -150ns Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer Fast Write Cycle Time
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1D7M177
AT28MC020
-150ns
AT28MC020-25MMB
AT28MC020-25ZMB
AT28MC020-20M
AT28MC020-20ZMB
AT28MC020-20MM
AT28MC020-20ZM
AT28MC020-20MI
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Am91L24
Abstract: 2114 static ram memory 2114L 91l24 memory ic 2114 pin out ram 2114L 2114L RAM 91L14 2114 1k x 16 RAM 4096N
Text: IMPROVED PERFORMANCE WITH THE Am9124 By Alex Shevekov, Paul Liu and Joe Kroeger INTRODUCTION off the top of the chart with a value of about .28mW/bit. Note that the Am91L02C, 2114, 2114L, Am9114C, and Am91L14C are straight lines; their dissipation does not depend on the state of
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Am9124
Am9124
4096-bit
18-pin
Am9114,
Am9124.
MOS-370
Am91L24
2114 static ram memory
2114L
91l24
memory ic 2114 pin out
ram 2114L
2114L RAM
91L14
2114 1k x 16 RAM
4096N
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LC324256BP
Abstract: LC324256 BZ-70 3144A
Text: ^ O rdering num ber : EN Sí 4 3 9 6 CMOS LSI LC324256BP, BZ-70/80' No. M 4396 1 MEG 262144 words x 4 bits DRAM Fast Page Mode Preliminary Overview Package Dimensions The LC324256BP, B Z series consists of CMOS dynamic RAM operating from a single 5 V power source and
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LC324256BP,
BZ-70/80'
001371b
LC324256BP
LC324256
BZ-70
3144A
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91L02
Abstract: IR 332 AM9102 91L02A 91L02PC 9102E 9102D 9102C 9102B 9102CP
Text: Am9102/Am91L02 FAMILY 1024x1 Static R/W Random Access Memories D IST IN C T IV E C H A R A C T E R IS T IC S F U N C TIO N A L D ESCR IP TIO N • The A m 9 1 0 2 F a m ily o f 1 0 2 4 -b it s ta tic N -channel R A M s c o n ta in s m em bers w ith cy c le tim es ranging fro m 650ns to
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Am9102/Am91L02
1024x1
9102/A
91L02
100ns
IR 332
AM9102
91L02A
91L02PC
9102E
9102D
9102C
9102B
9102CP
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sim 6930
Abstract: T9015 cy 6935 ba2 code
Text: H O LTE K H r HT9015 RF Single Chip for Cordless Phone Features • • • • • O p e ra tin g voltage: 2.7V~6V E x trem e ly low pow er consum ption c u rre n t - Ic c = 0|iA typ. in b a tte ry -sa v in g m ode - Ic c = 7.5m A (typ.) in sta n d b y m ode
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HT9015
T9015
sim 6930
cy 6935
ba2 code
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MAF115
Abstract: LQ480 MDA3505 MDA3530 MDA3510 4DR821 LQ450 TESLA AF115 4DR821B
Text: I KONCERN ROZNOV NOVINKY1986 AKTIVNÎ POLOVODIÔOVÉ SOUÔÂSTKY odladéni nosné borvj zpoidéni Pro d o d ó vky n e zá va zn él P u b lik o v a n é te c h n ic k é in fo rm a c e o vlastno stech a p ríp a d n é .n m ozném p o u z ití soucastek mo
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NOVINKY1986
04318E0092319231B7
MAF115
LQ480
MDA3505
MDA3530
MDA3510
4DR821
LQ450
TESLA
AF115
4DR821B
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cq 721
Abstract: am26ls31 27LS00 TRANSISTOR SUBSTITUTION Amdasm am2911pc 25S558 STK 025 power amplifier GE semiconductor data handbook am29811adc-b
Text: í i í i í i n z ta a a a a a a a a a a a r n a a a a a a a a a a a a a i: 33a a a a a a n a a a a a ; a a a a a a a a n a a iia a r r ia a a a a a n a a iia a a r l a n g a s í i í i í i * i¿ w n r w a s a jn sü n n a n a n n n n íiíi íiíiíi n n s n n n
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F-28-2
F-42-1
F-48-2
cq 721
am26ls31
27LS00
TRANSISTOR SUBSTITUTION
Amdasm
am2911pc
25S558
STK 025 power amplifier
GE semiconductor data handbook
am29811adc-b
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21112 kONTRON
Abstract: EA-8332 elektronik DDR Am8251 AM9511 AM8251DC AM2716DC am9511a MM1402 MM5055
Text: a a a a a a a a a a a a a a a a a a a ;< t f n a ;i i i aaaaaaaa aaaaaaaaaa^ an azi n a a a a a a a n a a a a a n a n a ¿ i ;i ¿ t a a ;i a a a a a a a a a a a a a a a a a a r t a r ir ir iii aaaaaaaaaaaaaaaaaa^ aanaa a a a a a a a a a a a a a a a a r i^ a a a a in
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Madrid-16
K23459
21112 kONTRON
EA-8332
elektronik DDR
Am8251
AM9511
AM8251DC
AM2716DC
am9511a
MM1402
MM5055
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