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    L-803 IC Search Results

    L-803 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    L-803 IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: W741C260 ßVinbond H lü ix Electronics Corp. Cwinbond X ü n x Electronics Corp. Headquarters Winbond Electronics (H.K. Ltd. Rm . 803, W orld Trade Square, T ow er II, No. 4, C reation Rd. Ill, 123 H oi B u n Rd., Kw un Tong, S cie n ce -B a se d In dustrial Park,


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    PDF W741C260 886-2-2719Q505

    9023TCB000A

    Abstract: 9013TCB tj08 n 9013 s 9013 h 331 9013TCB000A 9003TCB000A
    Text: 9003 B o a r d In T e r m i n a l mm UNIT inch 6.40 2.5 090 CO u v0i.o o i8OB .039-803 1.1 .043 rt w RECOMMENDED HOLE PATTERN IO SECTION B - B SECTION A -A V///Æ777X P .C .B —' 1.55 .061 9013 I ocd> B o a r d In T e r m i n a l mm .331 J .433 7.8 .307 ^


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    PDF 9013TCB t-J08 V7777, 9003TCB000A 9013TCB000A 9023TCB000A CCD--9003R 9013R01 CCD--9023R tj08 n 9013 s 9013 h 331

    KH42HM2-851

    Abstract: KH42HM2-852 KH42HM2-801 KH42HM2 KH42HM2-802 100KPPS 034-CA KH42HM KH42
    Text: 2 -P h a s e Hybrid S tep p in g M otor ^ 1.8 KH42 series 800 type HIGH TORQUE, LOW VIBRATION AND LOW NOISE • STANDARD SPECIFICATIONS M O D E L KH42HM2 U N IT -801 DRIVE METHOD NUMBER OF PHASES STEP ANGLE d e g ./s te p -802 -803 -852 -851 UNI-POLAR BI-POLAR


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    PDF KH42HM2 JL40g KH42HM KH42HM2-851 KH42HM2-852 KH42HM2-801 KH42HM2 KH42HM2-802 100KPPS 034-CA KH42

    Untitled

    Abstract: No abstract text available
    Text: r .n o t e s : i.ooi rue BB-CD-803 -0 2 ¡ no. m a t ' l : co pper stock t k n . PLATING: ELECTRO TIN (.0003 MIN) 081 MIN-, TIN-PLATED BRASS FUNNEL FERRULE © NYLON INSULATION (COLOR CODED BLUE) 2 0 6 STUD SIZES:(-.005) .170*MWID 4 32 02 « .094 04 = .1 19


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    PDF E32244 BB-827X BB-CD-803

    B1133

    Abstract: B 1184 J1311 W/CDBM MARTA
    Text: REVISIONS L TR DESCRIPTION SEE PACKAGE XI D E S I GNATOR A B C D E F G H J K L M N P R S T U V w X Y 2 3 4 5 6 XI PACKAGE WI DTH ±30/£m 777 803 828 853 879 904 930 955 980 1006 1031 1057 1082 1107 1 133 1 1 58 1184 1209 1234 1260 1285 1311 1336 1361 1387


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    PDF 005mm; MKT-BPA05XXX B1133 B 1184 J1311 W/CDBM MARTA

    70498-5068

    Abstract: 70498-2068 70497-1068
    Text: 70498 5EE NOTE 5 DETAIL 'A' ASSEMBLED WITHOUT S T R A IN -R E L IE F SCALE 8s I .803 (20.4O) 70498 422 ( 10.72) ASSEMBLED (STRAIN 008/( R ELIER WITH IS STRAIN LOADED R ELIEF ARTER TERMINATION) 0. 2 0 ) < 1 15 6±. 0 0 0 4 50 CIRCUIT SHOWN ) . 3 9 6 ± 0 . 0 10)


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    PDF UCP2004- U8I273 UDT1999-0464 U60545 2002/95/EC 2000/53/EC" PK-70873-0258 S-70498-5* S7049852 70498-5068 70498-2068 70497-1068

    nytronics delay

    Abstract: Nytronics DDL-450F
    Text: NYTRONICS INC/ NYTRONICS 25E D ; ^ 7 0 0 ORANGE STREET, DARLINGTON, S. C. 29532 ' ‘ f ; ' ‘ ‘- : 803 393-5421 • -TWX 810-665*2182 14 10 12 • b?2177H OODOSfil fi ■ 7 ^ DDL-XXXF & LPS-XXX ADVANCED SCHOTTKY DELAY LINES 8 A D V A N C E D S C H O T T K Y (D D L -X X X F )


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    PDF DDL-25F LPS-25 DDL-30F LPS-30 DDL-35F LPS-35 DDL-40F LPS-40 DDL-45F LPS-45 nytronics delay Nytronics DDL-450F

    IC 7805 pin diagram

    Abstract: block diagram of IC 7805 7805 pi IC 7805 14 pin diagram lc 7805 pl 7805 7805 ic free ic 7805 7805 LA 7805
    Text: SN74ALVC7 803, S N 7 4 A L V C 7805, S N 7 4 A L V C 7 8 1 3 51 2 x 1 8, 256 x 1 8,64 x 1 8 L O W - P O W E R E D C L O C K E D FIRST-IN, F I RS T- OUT M E M O R I E S S C A S 436B -JU N E 1 9 9 4 - REVISED JULY 1995 DL PACKAGE TOP VIEW O p e r a t e s a t 3 - V to 3 . 6 - V V q q


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    PDF SN74ALVC7 IC 7805 pin diagram block diagram of IC 7805 7805 pi IC 7805 14 pin diagram lc 7805 pl 7805 7805 ic free ic 7805 7805 LA 7805

    B111C

    Abstract: RNSRY202
    Text: It rin JL Tr E X T E R N A L V F M S T E P -U P DC/DC CO N VERTER CO N TR O LLER M O .EA -Ö 42-9 803 RN5RY202 OUTLINE T h e RN5RY202 S eries are VFM chopper C ontrol IC's for step-up D C /D C co n v erter w ith an ex tern al pow er tra n sis­ to r featu rin g h igh output voltage accuracy and low supply cu rre n t by CM O S process. T h e RN5RY202 S eries ICs


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    PDF RN5RY202 RN5RY202 B111C RNSRY202

    b 803 a

    Abstract: No abstract text available
    Text: SEK18 MKVINC Number of contacts 10-64 Card edge connectors for insulation displacement Identification C ard edg e c o n n e c to rs fo r in s u la tio n d is p la c e m e n t fo rR C .B . th ic k n e s s 1.6 m m Number of contacts * Part No. Drawing \ 10 14


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    PDF SEK18 54x12 54x16 54x19 54x24 54x29 54x31 b 803 a

    Untitled

    Abstract: No abstract text available
    Text: D A L L A S DS1803 Addrsssabl Dual Digital PotGntiomGtGr s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • 3V or 5V Power Supplies C 1 14 ] VCC L1 c 2 13 ] NC wi [2 3 12 HO A2 Q 4 11 :lo 5 10 "2 wo A0 Q 6 9 2 SDA hi • Ultra-low power consumption • Two digitally controlled, 256-position potentiometers


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    PDF DS1803 256-position 16-Pin DS1803E 14-PIN 100KQ Ebl4130

    702 Z TRANSISTOR

    Abstract: 702 TRANSISTOR npn 702 TRANSISTOR S6020 TL MJE2955T 702 pnp TRANSISTOR S 802 4A complementary transistor TRansistor 701
    Text: SAMSUNG S E M I C ON D U CT OR INC i 4É D ¡ 7*11,4142 0 0 0 7 7 0 4 5 NpN EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE—750 @ IC -1 .5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS


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    PDF MJE700/701/702/703 MJE800/801/802/803 MJE700/701 MJE702/703 O-126 702 Z TRANSISTOR 702 TRANSISTOR npn 702 TRANSISTOR S6020 TL MJE2955T 702 pnp TRANSISTOR S 802 4A complementary transistor TRansistor 701

    ut 803A

    Abstract: SM803 b 803a SM805 SM803A
    Text: SM 803/SM 803A/SM 805/SM 805A CMOS 8-Bit Single Chip Microcomuputer SM803/SM803A SM805/SM805A • CMOS 8-Bit Single Chip Microcomuputers Description Pin Connections T he S M 8 0 3 /A , S M 8 0 5 /A are CMOS 8 -b it sin ­ gle chip m icrocom puters which have 4K bytes and


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    PDF 803/SM 03A/SM 805/SM SM803/SM803A SM805/SM805A ut 803A SM803 b 803a SM805 SM803A

    Philips 2222 capacitor

    Abstract: 2222 capacitor philips 29104 2222 033 2222 033 philips PHILIPS capacitors 2222 390 HM 2222 A capacitor 2220 2222 393 29224 philips capacitor 2222
    Text: Metallized Polyphenylene Sulphide Film Capacitors Series 2222 390/394 Metallized Polyphenylene Sulphide Film Capacitors MKPS Chip Capacitor Series 2222 390/394 Features Style 2222 2222 2222 *2222 '? • Surface Mounted • Supplied in tape on reel Q u ick R eference Data


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    PDF 12-series) Philips 2222 capacitor 2222 capacitor philips 29104 2222 033 2222 033 philips PHILIPS capacitors 2222 390 HM 2222 A capacitor 2220 2222 393 29224 philips capacitor 2222

    SBL Series

    Abstract: SBL-121 SBL-221 SBL-801 EN3056 30562 J SBL121
    Text: Ordering number : EN3056 No.3056 _ /_ SBL Series / B eam Lead Type GaAs S chottky B a rrie r Diode / / C to Millimeter Band Mixer, Detector, Modulator Applications F e a tu re s - F a c ilita te s easy m o u n tin g on MIC M icrowave IC


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    PDF EN3056 SBL-121 12GHz SBL-801 SBL-221: 22GHzband SBL Series SBL-221 EN3056 30562 J SBL121

    Untitled

    Abstract: No abstract text available
    Text: i M ETR IC CONVERSIO N TABLE i i_ _ Aluminum Electrolytic Capacitors UNINSULATED CASE DIMENSIONS Case Dimensions Dia. mm 5 6.3 8 10 10 10 10 10 12.5 12.5 12.5 12.5 12.5 16 16 16 18 18 Fig. A Length mm F mm


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    PDF

    ic 803

    Abstract: 4520C lta 803 I8010L 8010c ic803 8031 er
    Text: _ AH-2_ MIC8030/8031 Application Hints MIC8030/MIC8031 Application Hints on Compatibility with Display Drivers Produced by AMI and HOLT T h e M IC 8 030/M IC 8031 can be m a de com p a tib le w ith all b o n d in g op tio n s of the G o u ld -A M I S 452 0 as w ell as all


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    PDF MIC8030/8031 MIC8030/MIC8031 030/M I-8010L5, I-8010L6, I-8010L7, I-8010C HI-8010C6, S4520G ic 803 4520C lta 803 I8010L 8010c ic803 8031 er

    JE802

    Abstract: No abstract text available
    Text: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I c= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic


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    PDF MJE800/801/803 JE700/701/702/703 MJE800/801 JE802/803 50fiA JE802

    Untitled

    Abstract: No abstract text available
    Text: 802 Series 802 Series 803 Series !1h I "r ' + hAi an Inch es Dim. .05 6-.066 .05 2-,072 1.115-1.135 .55 2-,572 .4 9 0 - 510 .18 0- 200 DIA. .750 MAX. .3 0 2 -.3 2 2 A B C D E F G H c an -I H k > o M illim e te r 1.42-1.68 1.32-1.83 28.32-28.83 14.02-14.53


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    PDF

    TRANSISTOR S 802

    Abstract: KSE800 ic 801
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KS E800/801/803 HIGH DC CU R R EN T GAIN MIN hFE= 750 @ lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EM ITTER RESISTORS Complement to KSE700/701/702/703 A B S O LU T E MAXIMUM RATINGS Characteristic


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    PDF E800/801/803 KSE700/701/702/703 KSE800/801 KSE802/803 KSE800/801/803 TRANSISTOR S 802 KSE800 ic 801

    Untitled

    Abstract: No abstract text available
    Text: C E R A M IC H IG H RELIABILITY M O LD E D /A X IA L & RADIAL_ KEMET . GENERAL INFO RM A TIO N M IL -C -12 3 INTRODUCTION TABLE I MIL-C-123 specification covers the general requirements for high reliability, general purpose BX and temperature stable (BP) ceramic dielectric fixed


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    PDF MIL-C-123 fo184KW CKS16) C222Z124K1X5CA C222Z154K1X5CA C222Z184K1X5CA C222Z224K1X5CA C222Z274K1X5CA C222Z334K1X5CA

    kse800

    Abstract: 702 TRANSISTOR 702 Z TRANSISTOR TRansistor L 701
    Text: NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS C haracteristic


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    PDF E800/801/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 kse800 702 TRANSISTOR 702 Z TRANSISTOR TRansistor L 701

    IC 7377 pin diagram

    Abstract: mp 1060 ceramic filter ffe
    Text: 19-1217; Rev 0; 4/97 V M ilX I A I R e g u l a t e d 3 . 3 V Ch a r g e P u mp The MAX679 step-up, regulated charge pum p gener­ ates a 3.3V ±4 % output vo ltag e from a 1.8V to 3.6V in p u t v o lta g e two a lka lin e , N iC d, or NiM H; o r one Lithium-Ion battery . Output current is 20mA (min) from


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    PDF MAX679 330kH IC 7377 pin diagram mp 1060 ceramic filter ffe

    JE801

    Abstract: JE700 transistor H 802 y 803
    Text: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 b= -1 -5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic


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    PDF MJE800/801/803 MJE800/801 MJE802/803 JE801 JE700 transistor H 802 y 803