KW MHZ TRANSISTOR MODULE Search Results

5.1 ch amplifier circuit diagram

Abstract: kw MHz transistor module motorola catv
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG1001R2 Features • • • • • • Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Built-in Input Diode Protection

zener diode marking R11

Abstract: 5.1 ch amplifier circuit diagram ZENER MARKING r12 "Amplifier Modules" 5.1 v zener RG4 DIODE jedec 0603
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology

F600R12

Contextual Info: Technische Inform ation/Technical Information IGBT-Module IGBT-Modules FF 600 R 12 KL4C vorläufige Daten preliminary data Höchstzulässige W erte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 12 KL4C vorläufige Daten preliminary data Höchstzulässige W erte / Maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage p O C O Il o I- p LO C\J II

5.1 ch amplifier circuit diagram

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG2001R2 Features • • • • • • • Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability Built-in Input Diode Protection

Contextual Info: GP600DHB16S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R Supersedes March 1997 version, DS4335 - 5.6 DS4335 - 5.7 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V C E sat , 3.5V 'q c o N T , 600A ' c (PK, 1200A APPLICATIONS • High Pow er Sw itching.

Contextual Info: GP1200FSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V CE sat , 3.5V APPLICATIONS • High Pow er Sw itching. ■ M otor C ontrol. ■

zener motorola

Abstract: 5.1 v zener 1.5k27a CTB112 CTB132 MMG1001R2 XMD112 XMD132 zener 1206 5.1 v C12PIN
Contextual Info: MOTOROLA Order this document by MMG1001R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG1001R2 Features • • • • • • Specified for 79 - , 112 - and 132 - Channel Loading Excellent Distortion Performance

1.5k27a

Abstract: 5.1 v zener 77PC016E061
Contextual Info: MOTOROLA Order this document by MMG1001R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG1001R2 Features • • • • • • Specified for 79 - , 112 - and 132 - Channel Loading Excellent Distortion Performance

Contextual Info: @ M ITEL GP400LSS16S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation DS4987 - 1.3 The GP400LSS16S is a single switch 1600V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the

half bridge circuit diagram

Abstract: lc 6231 ge traction motor 12v dc to 220a cv inverter circuits diagrams GP200MHB12S UPS circuit diagram
Contextual Info: @ MITEL GP200MHB12S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4339 - 4.2 The GP200MHB12S is a single switch 1200V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the

1200ap

Abstract: kw MHz transistor module GEC 41 GP600DHB16S lc 6231 GEC Plessey Semiconductors DS433
Contextual Info: S i GEC PL E S SE Y NOVEM BER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4335-5.5 GP600DHB16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V C E ,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ^ C O N T ■ UPS.

zener diode marking R11

Abstract: ZENER MARKING r12 jedec 0603 5.1 v zener 2512 470 5.1 ch amplifier circuit diagram
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 6, 7/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection

5.1 ch amplifier circuit diagram

Abstract: ZENER MARKING r12
Contextual Info: Freescale Semiconductor Technical Data MMG1001 Rev. 4, 1/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79−, 112− and 132−Channel Loading • Excellent Distortion Performance • Built−in Input Diode Protection • GaAs FET Transistor Technology

GP600FHB16S

Contextual Info: GP600FHB16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4545 - 2.6 DS4545 - 2.7 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V C E sat , 3.5V 'q c o N T , 600A ' c (PK, 1200A APPLICATIONS • High Pow er Sw itching.

Motorola RG4 DIODE

Abstract: A2MC
Contextual Info: MOTOROLA Order this document by MMG1001R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG1001R2 Features • • • • • • Specified for 79–, 112– and 132–Channel Loading Excellent Distortion Performance

motorola diode r14

Abstract: resistor 0603 100 5.1 ch amplifier circuit diagram RS1611 CTB112 CTB132 MMG1001R2 XMD112 XMD132 motorola 4 mhz 52 pin
Contextual Info: MOTOROLA Order this document by MMG1001R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG1001R2 Features • • • • • • Specified for 79–, 112– and 132–Channel Loading Excellent Distortion Performance

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 6, 7/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection

DS493

Contextual Info: GP800DHB12T M ITEL S E M IC O N D U C T O R Powerline N-Channel IGBT Module Advance Inform ation Supesedes August 1998, version DS4931-2.0 T he G P 800D H B 12T is a dual sw itch 1200V, robust n c h a n n e l e n h a n c e m e n t m o d e in s u la te d g a te b ip o la r

crcw06031000fkta

Abstract: CRCW06035600FKTA ZENER MARKING r12 A113 CTB112 CTB132 MMG1001NT1 XMD112 XMD132 5.1 v zener
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 8, 3/2007 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection

crcw06031000fkta

Abstract: CRCW06031200FKTA CRCW06030000FKTA CRCW06032001FKTA GaAs FET chip A113 CTB112 CTB132 MMG1001NT1 XMD112
Contextual Info: Freescale Semiconductor Technical Data Gallium Arsenide CATV Integrated Amplifier Module LIFETIME BUY Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology

zener diode marking R11

Abstract: A113 CTB112 CTB132 MMG1001NT1 XMD112 XMD132
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 7, 10/2006 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection

Contextual Info: S i GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4335-5.5 GP600DHB16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V CE,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ^ C O N T ■ UPS. 6 0 0 A

201789A

Abstract: narda directional coupler NARDA 3022
Contextual Info: APPLICATION NOTE Performance of Circulators Under Peak and Average Power Conditions This Application Note describes the power testing of Skyworks circulators. A number of circulators for different frequency bands were selected. Due to the limited availability of RF pulse power