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    KU086N10P

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KU086N10P/F TECHNICAL DATA N-ch Trench MOS FET General Description KU086N10P This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,


    Original     		PDF KU086N10P/F KU086N10P KU086N10P KU086N10F

    086N10P

    Abstract: KU086N10P Mos fet 086N10P
    Text: SEMICONDUCTOR KU086N10P/F TECHNICAL DATA N-ch Trench MOS FET General Description KU086N10P A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,


    Original     		PDF KU086N10P/F KU086N10P Fig16. Fig17. Fig18. 086N10P KU086N10P Mos fet 086N10P

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05