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    KU BAND POWER GAAS FET Search Results

    KU BAND POWER GAAS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    KU BAND POWER GAAS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEZ1011-8E

    Abstract: No abstract text available
    Text: DATA PRODUCT SHEET PRELIMINARY INFORMATION GaAs MES FET NEZ1011-8E 8 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1011-8E is power GaAs FET which provides high 0.5±0.05 1.5 CHAMFER 4 PLACES gain, high efficiency and high output power in Ku-band.


    Original     		PDF NEZ1011-8E NEZ1011-8E

    MGF2430A

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz


    Original     		PDF MGF2430A MGF2430A, 300mA MGF2430A

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=32.0dBm(TYP.) @f=12GHz


    Original     		PDF MGF2445A MGF2445A, 12GHz 450mA

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz


    Original     		PDF MGF2407A MGF2407A,

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz


    Original     		PDF MGF2430A MGF2430A, 300mA

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz


    Original     		PDF MGF2407A MGF2407A,

    MGF2415

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz


    Original     		PDF MGF2415A MGF2415A, 150mA MGF2415

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=32.0dBm(TYP.) @f=12GHz


    Original     		PDF MGF2445A MGF2445A, 12GHz 450mA

    30349

    Abstract: 136423
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R275, NE960R575 0.2/0.5 W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NE960R275 and NE960R575 are 0.2/0.5 W GaAs MESFETs designed for middle power transmitter applications for X, Ku-band microwave communication systems. It is capable of delivering 0.2/0.5 watt of output


    Original     		PDF NE960R275, NE960R575 NE960R275 NE960R575 NE960R275) NE960R575) 30349 136423

    MGF2415A

    Abstract: MGF2430A
    Text: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz


    Original     		PDF MGF2415A MGF2415A, 150mA MGF2415A MGF2430A

    gaas fet micro-X Package marking

    Abstract: gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
    Text: < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES FETis designed for use in S to Ku band amplifiers. Outline Drawing FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION Fig.1 S to Ku band low noise amplifiers


    Original     		PDF MGF1451A MGF1451A 13dBm 12GHz gaas fet micro-X Package marking gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X

    Nec K 872

    Abstract: 102528 NEC 2905 139492 NEZ1414-2E T-78 NEZ1011-2E 72248 121-138 26433
    Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with


    Original     		PDF NEZ1011-2E, NEZ1414-2E NEZ1011-2E NEZ1414-2E NEZ1011-2E) NEZ1414-2E) Nec K 872 102528 NEC 2905 139492 T-78 72248 121-138 26433

    NEC1011-5E

    Abstract: NEZ1011-5E NEZ1414-5E T-78
    Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-5E, NEZ1414-5E 5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with


    Original     		PDF NEZ1011-5E, NEZ1414-5E NEZ1011-5E NEZ1414-5E NEC1011-5E) NEZ1414-5E) NEC1011-5E T-78

    NEZ1011-3E

    Abstract: NEZ1414-3E T-78 1981 3E
    Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-3E, NEZ1414-3E 3W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with


    Original     		PDF NEZ1011-3E, NEZ1414-3E NEZ1011-3E NEZ1414-3E NEZ1011-3E) NEZ1414-3E) T-78 1981 3E

    92963

    Abstract: 40198 NEZ1011-4E NEZ1414-4E T-78
    Text: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with


    Original     		PDF NEZ1011-4E, NEZ1414-4E NEZ1011-4E NEZ1414-4E NEZ1011-4E) NEZ1414-4E) 92963 40198 T-78

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK39V4045 14.0 – 14.5 GHz BAND / 8W DESCRIPTION The MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFK39V4045 MGFK39V4045

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFX39V0717 10.7 – 11.7 GHz BAND / 8W DESCRIPTION The MGFX39V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFX39V0717 MGFX39V0717

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFK25V4045 MGFK25V4045

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK30V4045 14.0 – 14.5 GHz BAND / 1.1W DESCRIPTION The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFK30V4045 MGFK30V4045 350mA

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFK35V4045 MGFK35V4045

    35W amplifiers

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFK35V4045 MGFK35V4045 35W amplifiers

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NEZ1414-4E 4 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1414-4E is power GaAs FET which provides high gain, high efficiency and high output power in Ku-band. The internal input and output matching enables guaran­


    OCR Scan     		PDF NEZ1414-4E NEZ1414-4E

    99419

    Abstract: No abstract text available
    Text: _ DATA SHEET_ _ N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ101.1-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with


    OCR Scan     		PDF NEZ1011-4E, NEZ1414-4E NEZ101 NEZ1414-4E NEZ1011-4E) NEZ1414-4E) 99419

    NEC 2933

    Abstract: 2912 nec NEC 2705 72248 NEC 2705 L 107
    Text: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high . output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with


    OCR Scan     		PDF NEZ1011-2E, NEZ1414-2E NEZ1011-2E NEZ1414-2E NEZ1011-2E) NEZ1414-2E) NEC 2933 2912 nec NEC 2705 72248 NEC 2705 L 107