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    KU 607 Search Results

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    KU 607 Price and Stock

    Intel Corporation FH8070304243808SRKUE

    CPU - Central Processing Units Intel Atom x6425E Processor (1.5M Cache, up to 3.00 GHz) FC-BGA16C, Tray
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FH8070304243808SRKUE
    • 1 $90.83
    • 10 $88.83
    • 100 $86.04
    • 1000 $86.04
    • 10000 $86.04
    		Get Quote

    Intel Corporation FH8070304243807SRKUD

    CPU - Central Processing Units Intel Atom x6211E Processor (1.5M Cache, up to 3.00 GHz) FC-BGA16C, Tray
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FH8070304243807SRKUD
    • 1 $61.03
    • 10 $60.19
    • 100 $57.5
    • 1000 $57.5
    • 10000 $57.5
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    Intel Corporation DC8070304190881SRKUA

    CPU - Central Processing Units Intel Celeron Processor J6412 (1.5M Cache, up to 2.60 GHz) FC-BGA16F, Tray
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DC8070304190881SRKUA
    • 1 $93.91
    • 10 $89.07
    • 100 $83.62
    • 1000 $83.62
    • 10000 $83.62
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    Intel Corporation DC8070304190882SRKUB

    CPU - Central Processing Units Intel Pentium Processor J6426 (1.5M Cache, up to 3.00 GHz) FC-BGA16F, Tray
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DC8070304190882SRKUB
    • 1 $134.5
    • 10 $128.15
    • 100 $124.51
    • 1000 $124.51
    • 10000 $124.51
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    Intel Corporation DC8070304190883SRKUC

    CPU - Central Processing Units Intel Celeron Processor N6210 (1.5M Cache, up to 2.60 GHz) FC-BGA16F, Tray
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DC8070304190883SRKUC
    • 1 $93.91
    • 10 $89.07
    • 100 $83.62
    • 1000 $83.62
    • 10000 $83.62
    		Get Quote
    Find more KU 607 price and stock on Findchips.com

    KU 607 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KU607 Unknown Cross Reference Datasheet Scan PDF
    KU607 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KU607 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KU607 Tesla Transistor Scan PDF

    KU 607 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TFF11096HN Low phase noise LO generator for VSAT applications Rev. 3 — 28 March 2013 Product data sheet 1. General description The TFF11096HN is a Ku band frequency generator intended for low phase noise Local Oscillator LO circuits for Ku band VSAT transmitters and transceivers. The specified


    Original     		PDF TFF11096HN TFF11096HN IESS-308 IESS-308

    draka fileca

    Abstract: KU 03 draka fileca cable ETFE
    Text: Fiches série 5 14/12/00 17:09 Page 5 Wires and cables for missiles & electronic equipments 5 Single & multicore ETFE insulated wires NFC 93.524/KU series Stranded conductor : Tinned copper ETFE Insulation APPLICATIONS ● Wiring applications for Military electronic equipments


    Original     		PDF 524/KU draka fileca KU 03 draka fileca cable ETFE

    Untitled

    Abstract: No abstract text available
    Text: OQUHGV Ogvcn"Qzkfg"Ugokeqpfwevqt"Hkgnf"Ghhgev"Vtcpukuvqt QrvkOQUVO QrvkOQUVO"Rqygt/OQUHGV."62X DU¥245P26NU Fcvc"Ujggv Tgx0"402 Hkpcn Rqygt"Ocpcigogpv" "Ownvkoctmgv QrvkOQUVO"Rqygt/OQUHGV 62X DU¥245P26NU 3"""""Fguetkrvkqp VUFUQP/:"HN


    Original     		PDF 245P26NU

    d768 transistor

    Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE32584C NE32584C d768 transistor 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442

    ku 206

    Abstract: draka fileca cable MARKING KU 1 928 498 161 multicore NFC 93 ku06 0 281 010 255
    Text: Fiches série 5 14/12/00 17:09 Page 7 Wires and cables for missiles & electronic equipments 5 Single & multicore ETFE shielded and jacketed wires NFC 93.524/KU series Stranded conductor : Tinned copper ETFE Insulation Braid, tinned copper APPLICATIONS ● Wiring applications for Military electronic equipments


    Original     		PDF 524/KU ku 206 draka fileca cable MARKING KU 1 928 498 161 multicore NFC 93 ku06 0 281 010 255

    WR284* ISOLATOR

    Abstract: MS3116E-10-6S WR340 flange dimensions
    Text: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS


    Original     		PDF 2002/96/EC 2002/96/EC C-39B WR284* ISOLATOR MS3116E-10-6S WR340 flange dimensions

    NE67383

    Abstract: NE67300 2SK407 NEC NE67300 MESFET 8S222 NE673 NEC NE67383
    Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • VERY HIGH fMAX: 100 GHz 20 • LG = 0.3 µm, WG = 280 µm • N+ CONTACT LAYER Triple Epitaxial Technology


    Original     		PDF NE67300 NE67383 NE673 24-Hour NE67383 NE67300 2SK407 NEC NE67300 MESFET 8S222 NEC NE67383

    FLK107XV

    Abstract: No abstract text available
    Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band


    Original     		PDF FLK107XV FLK107XV FCSI0598M200

    FET 913

    Abstract: FLK107XV
    Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band


    Original     		PDF FLK107XV FLK107XV FET 913

    Untitled

    Abstract: No abstract text available
    Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band


    Original     		PDF FLK107XV FLK107XV

    Untitled

    Abstract: No abstract text available
    Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band


    Original     		PDF FLK107XV FLK107XV

    Untitled

    Abstract: No abstract text available
    Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band


    Original     		PDF FLK107XV FLK107XV FCSI0598M200

    smd JSs

    Abstract: smd JSs diode
    Text: SK50GB065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY IGBT Module SK50GB065 *'-) RSS N KU V B- I WS L$ US V RS V Z JS N BP I TJK L$ TS _- B- I JK L$ RU V B- I WS L$ UW V C$XYI J : C$0%&


    Original     		PDF SK50GB065 smd JSs smd JSs diode

    Untitled

    Abstract: No abstract text available
    Text: SK50GARL065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY IGBT Module SK50GARL065 *'-) RSS N KU V B- I WS L$ US V TJS V Z JS N BP I TJK L$ TS _- B- I JK L$ JK V B- I WS L$ Ta V C$XYI J : C$0%&


    Original     		PDF SK50GARL065

    NEC k 2134 transistor

    Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm


    OCR Scan     		PDF NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584

    GN-R40RSPN-J

    Abstract: GN-R40RSPN GN-M2RS GN-T10RSPN GN-R40RS-J GN-T10RSPN-J GN-R40RS GNP1 4r2s takenaka
    Text: PHOTOSENSOR G N SERIES TAKENAKA ELEC TR O N IC I N D U S T R I A L C O . , L T D. with built-in amplifier_ I N S T R U C T I O N M A N U A L Head office, factory T elephone FAX : 20-1 Narano-cho, Shinomiya, Yamashina-ku, : Kyoto 607-8032, Japan


    OCR Scan     		PDF GN-T10RS GN-R40RS GN-T10RSPN GN-R40RSPN GN-T10RS-J GN-R40RS-J GN-T10RSPN-J GN-R40RSPN-J GN-R40RSPN-J GN-R40RSPN GN-M2RS GNP1 4r2s takenaka

    Untitled

    Abstract: No abstract text available
    Text: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli­


    OCR Scan     		PDF MGF1923 13dBm 12GHz

    FLK107XV

    Abstract: tc 5082
    Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability DESCRIPTION The FLK107XV chip is a pow er G aAs FET that is designed for general purpose applications in the Ku-Band


    OCR Scan     		PDF FLK107XV FLK107XV FCSI0598M200 tc 5082

    NE67383

    Abstract: No abstract text available
    Text: NEC LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m a x : 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz


    OCR Scan     		PDF NE67300 NE67383 NE67383 NE673

    Andrew ANTENNA 6,4

    Abstract: No abstract text available
    Text: 1.2-/1.5-/1.8-/2.4-Meter NewsFlash Ku- or K-Band Transportable SNG Antennas Antenna Features • • A M otorized Drive System fo r a Reliable, Precise, and Smooth Running System Stow Height is 24 in 2.4-m eter o r 19 in (1.2-meter) fo r More Overall Clearance fo r the Vehicle


    OCR Scan     		PDF

    NE67383

    Abstract: No abstract text available
    Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: NE67300 NE67383 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz 3.3 dB at 26 GHz


    OCR Scan     		PDF NE67300 NE67383 NE67383 NE673 NE67300)

    Untitled

    Abstract: No abstract text available
    Text: HEAD OFFICE TEL. 03-3833-5441 FAX. 03-3835-4754 16-20, UENO 6-CHOME, TAITO-KU, TOKYO, JAPAN, ZIP CODE 110-0005 TEL. 1 760-510-3200 FAX.(1 )760-471 -4046 1770 LA COSTA MEADOWS DRIVE SAN MARCOS, CALIFORNIA 92069 U.S.A. CHICAGO OFFICE TEL.(1 )847-925-0888 FAX.(1)847-925-0899


    OCR Scan     		PDF 2A-01

    NE32584C-T1

    Abstract: nec 3435 transistor am 4428
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.


    OCR Scan     		PDF NE32584C NE32584C-T1A NE32584C-T1 nec 3435 transistor am 4428

    yx 861

    Abstract: yx 801 BUH 508 VAUC GT 1083 NE76084-T1 NE76083A NE76084S L to Ku Band Low Noise GaAs MESFET x band GaAs MESFET 261
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE ANO ASSOCIATED GAIN vs FREQUENCY Vos = 3 V, Id s • 10 mA FEATURES LOW NOISE FIGURE NF * 1,6 d8 TYP a! f = 12 GHz HIGH ASSOCIATED GAIN G a = 9 0 0 TYP at f • 12 GHz LG • 0.3 ¿im. W g = 280 S LOW COST METAL/CERAMIC PACKAGE


    OCR Scan     		PDF NE76084S NE76064S NE76084S test1342 NE76084-T1 yx 861 yx 801 BUH 508 VAUC GT 1083 NE76083A L to Ku Band Low Noise GaAs MESFET x band GaAs MESFET 261