Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTA2015 TRANSISTOR PNP FEATURES SOT–323 Excellent hFE Linearity Complementary to KTC4076 APPLICATIONS General Purpose Switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-323
KTA2015
KTC4076
-100mA
-400mA
-100mA,
-10mA
-20mA
25Min
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTC4076 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES Power dissipation 3. COLLECTOR 1.01 REF 1.25±0.05 PCM: 100 mW (Tamb=25℃) 0.30 1.30±0.03 Collector current
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OT-323
OT-323
KTC4076
100mA
400mA
100mA,
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KTC4076
Abstract: marking W4 W4 MARKING
Text: SEMICONDUCTOR KTC4076 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 W4 1 2 Item Marking Description Device Mark W KTC4076 hFE Grade 4 2, 4 * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KTC4076
KTC4076
marking W4
W4 MARKING
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KTA2015
Abstract: KTC4076
Text: SEMICONDUCTOR KTC4076 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ・Excellent hFE Linearity D A 3 1 G ・Complementary to KTA2015. J 2 : hFE 2 =25(Min.) at VCE=6V, IC=400mA. DIM A B C
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KTC4076
KTA2015.
400mA.
KTA2015
KTC4076
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KTA2015
Abstract: KTC4076 35VCEO
Text: SEMICONDUCTOR KTC4076 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ᴌExcellent hFE Linearity : hFE 2 =25(Min.) at VCE=6V, IC=400mA. J A SYMBOL RATING UNIT Collector-Base Voltage VCBO 35
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KTC4076
KTA2015.
400mA.
100mA
400mA
100mA,
25Min.
40Min.
KTA2015
KTC4076
35VCEO
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTC4076 TRANSISTOR NPN FEATURES SOT–323 Excellent hFE Linearity Complementary to KTA2015 APPLICATIONS General Purpose Switching 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-323
KTC4076
KTA2015
100mA
400mA
100mA,
25Min
40Min
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transistor marking WY
Abstract: KTC4076 WY transistor
Text: KTC4076 KTC4076 SOT-323 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 100 mW (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current ICM: 500 mA Collector-base voltage 35 V V(BR)CBO: Operating and storage junction temperature range
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KTC4076
OT-323
100mitter-base
100mA
400mA
100mA,
transistor marking WY
KTC4076
WY transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTC4076 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 100 mW (Tamb=25℃) 0. 30 1. 30¡ À0. 03
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OT-323
OT-323
KTC4076
100mA
400mA
100mA,
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC4076 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2008. 8. 29 Revision No : 4 1/2
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KTC4076
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transistor ZY
Abstract: ZY marking zy- transistor marking zo sot KTC4076 marking ZY KTA2015W marking code ZO
Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Power dissipation. PC=100mW z Excellent hFE Linearity. z Complementary to KTC4076. z Small package. KTA2015W Pb Lead-free APPLICATIONS z General purpose application and switching application.
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KTA2015W
100mW)
KTC4076.
OT-323
BL/SSSTF048
transistor ZY
ZY marking
zy- transistor
marking zo sot
KTC4076
marking ZY
KTA2015W
marking code ZO
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WY transistor
Abstract: transistor marking WY KTA2015 KTC4076W Y MARKING NPN Silicon Epitaxial Planar Transistor .wy transistor
Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z Complementary to KTA2015 z Power dissipation. PC=100mW KTC4076W Pb Lead-free APPLICATIONS z General purpose and switching application.
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KTC4076W
KTA2015
100mW)
OT-323
BL/SSSTF049
WY transistor
transistor marking WY
KTA2015
KTC4076W
Y MARKING
NPN Silicon Epitaxial Planar Transistor
.wy transistor
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KTA2015
Abstract: KTC4076
Text: SEMICONDUCTOR KTA2015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ・Excellent hFE Linearity D A 3 1 G ・Complementary to KTC4076. J 2 : hFE 2 =25(Min.) at VCE=-6V, IC=-400mA. DIM A B
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KTA2015
KTC4076.
-400mA.
KTA2015
KTC4076
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTC4076 TRANSISTOR NPN FEATURES SOT–323 Excellent hFE Linearity Complementary to KTA2015 APPLICATIONS General Purpose Switching 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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PDF
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OT-323
KTC4076
KTA2015
100mA
400mA
100mA,
25Min
40Min
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
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Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
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huaxing20
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
Y2 transistor
Transistor S8550 2TY
bq d882
transistor bc547 bk 045
transistor D882 datasheet
Z1 Transistor
TRANSISTOR MARK AQY
S8050 equivalent
K596-B
sot 89 D882
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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npn power transistor ic 400ma
Abstract: KTA2015 KTC4076
Text: SEMICONDUCTOR TECHNICAL DATA KTC4076 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • E x cellen t Ii f e L in earity : hFE 2 =25(M in.) a t V ce=6V, Ic=400mA. • Complementary to KTA2015. O 1 MAXIMUM RATINGS (Ta=25°C)
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OCR Scan
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PDF
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KTC4076
400mA.
KTA2015.
100mA
400mA
100mA,
25Min,
40Min.
npn power transistor ic 400ma
KTA2015
KTC4076
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KTA2015
Abstract: KTC4076
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC4076 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Linearity : hFE 2 =25(Min.) a t V ce =6V, Ic=400mA. • Complementary to KTA2015.
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OCR Scan
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PDF
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KTC4076
400mA.
KTA2015.
100mA
400mA
100mA,
25Min,
40Min.
KTA2015
KTC4076
|
KTC4076
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTC4076 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • E x cellen t I lfe L in earity : hFE 2 =25(M in.) a t V ce=6V, Ic=400mA. E B M - T * h.I T • Complementary to KTA2015.
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OCR Scan
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PDF
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400mA.
KTC4076
KTA2015.
100mA
400mA
100mA,
100mA
25Min,
40Min.
KTC4076
|
KTA2015
Abstract: KTC4076
Text: SEMICONDUCTOR TECHNICAL DATA KT A2015 e p it a x ia l p l a n a r p n p t r a n s is t o r GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I lfe Linearity : hFE 2 =25(Min.) a t V Ce = - 6 V , Ic=-400mA. • Complementary to KTC4076.
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OCR Scan
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PDF
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KTA2015
-400mA.
KTC4076.
-100-100-lk
KTA2015
KTC4076
|
KTA2015
Abstract: KTC4076
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR T E C H N IC A L D A T A KTA2015 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Iif e Linearity : hFE 2 =25(Min.) a t V ce=-6V , Ic=-400mA. • Complementary to KTC4076.
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OCR Scan
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PDF
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KTA2015
-400mA.
KTC4076.
-100-100-lk
KTA2015
KTC4076
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTA2015 e p it a x ia l p l a n a r p n p t r a n s is t o r GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent h FE Linearity : hFE 2 =25(Min.) at V ce= -6V , Ic=-400mA. • Complementary to KTC4076. MAXIMUM RATINGS (Ta=25°C)
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OCR Scan
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PDF
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-400mA.
KTC4076.
KTA2015
25Min.
40Min.
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