KTA1276 TRANSISTOR Search Results

KTA1276 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

KTA1276 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
KTA1276 Abstract: No abstract text available Text: KTA1276 KTA1276 TRANSISTOR PNP TO-220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current ICM: -3 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃	Original	KTA1276 O-220 -10mA, -500mA -200mA KTA1276	PDF
KTA1276 Abstract: KTA1276 transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors KTA1276 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -30	Original	O-220 KTA1276 O-220 -10mA, -500mA -200mA KTA1276 KTA1276 transistor	PDF
KTA1276 Abstract: KTC3230 Text: SEMICONDUCTOR KTA1276 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌGood Linearity of hFE. F ᴌComplementary to KTC3230. P B Q D UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V	Original	KTA1276 KTC3230. KTA1276 KTC3230	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors KTA1276 TO – 220 TRANSISTOR PNP 1. BASE FEATURES z High Transition Frequency z Good Linearity of hFE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	O-220 KTA1276 -10mA	PDF
KTA1276 Abstract: KTC3230 Text: SEMICONDUCTOR KTC3230 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. CORDLESS TELEPHONE TX FINAL AMPLIFIER. APPLICATION FOR 1.7MHz SYSTEM. E A R S F FEAUTRES P Q D B ᴌGood Linearity of hFE. ᴌComplementary to KTA1276. L C MAXIMUM RATING Ta=25ᴱ	Original	KTC3230 KTA1276. KTA1276 KTC3230	PDF
MB4213 Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors	Original	SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD	PDF
KTA1276 Abstract: KTC3230 Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3230 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. CORDLESS TELEPHONE TX FINAL AMPLIFIER. APPLICATION FOR 1.7MHz SYSTEM. FEAUTRES • Good Linearity of Iife• Complementary to KTA1276.	OCR Scan	KTC3230 KTA1276. 220AB 100x100x2mm 50x50x2mm KTA1276 KTC3230	PDF
KTA1276 transistor Abstract: No abstract text available Text: SEMICONDUCTOR TECHNICAL DATA KTA1276 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Good Linearity of Iife• Complementary to KTC3230. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	KTC3230. KTA1276 KTA1276 transistor	PDF
KTA1276 Abstract: KTC3230 Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1276 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Good Linearity of Iife• Complementary to KTC3230. MILLIMETERS MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage	OCR Scan	KTA1276 KTC3230. 220AB -10mA, KTA1276 KTC3230	PDF
transistor a1276 Abstract: a1276 K A1276 KTA1276 1.7MHz cordless telephone KTC3230 Scans-00125382 Text: SEMICONDUCTOR TECHNICAL DATA KTC3230 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. CORDLESS TELEPHONE TX FINAL AMPLIFIER. APPLICATION FOR 1.7MHz SYSTEM. FEAUTRES • Good Linearity of Iife. • Complementary to KTA1276. MAXIMUM RATINGS Ta=25°C	OCR Scan	KTC3230 KTA1276. 100x100x2mm 50x50x2mm transistor a1276 a1276 K A1276 KTA1276 1.7MHz cordless telephone KTC3230 Scans-00125382	PDF