KSD2 Search Results

KSD288Y

Abstract: KSD288YTU
Contextual Info: KSD288 KSD288 Power Regulator Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO=80V • Collector Dissipation : PC=25W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSD215AC3

Contextual Info: PRODUCT SPECIFICATION cosmo SOLID STATE RELAY: SHEET 1 OF 2 KSD215AC3 ELECTRONICS CORPORATION 1. OUTSIDE DIMENSION : UNIT mm 10.50 LED 02.00 Date Code xxx' cosmo LOAD 15A 250VAC INPUT 5 to 12VDC TYPE KSD215AC3 LOAD INPUT "u 4.5 5.0 iE o o -1 I _ T CNJ

KSD215AC8

Contextual Info: PRODUCT SPECIFICATION cosmo SOLID STATE RELAY: ELECTRONICS CORPORATION KSD215AC8 1. OUTSIDE DIMENSION : UNIT mm 2. SCHEMATIC : TOP VIEW SHEET 1 OF 2 PRODUCT SPECIFICATION cosmo SOLID STATE RELAY: ELECTRONICS CORPORATION SHEET 2 OF 2 KSD215AC8 3. Absolute Maximum Ratings

KSD203AC2

Abstract: KSD203 Cosmo Electronics 280 Relay SOLID STATE RELAY 3A 250ARMS
Contextual Info: PRODUCT SPECIFICATION DATE: cosmo SOLID STATE RELAY: NO. 58022203 KSD203AC2 ELECTRONICS CORPORATION SHEET 1 OF 2 1. OUTSIDE DIMENSION : UNIT mm 37.00 LED 02.0 cosmo ELECTRONICS CORPORATION LOAD 3A 250VAC INPUT 4 to 32VDC TYPE KSD203AC2 LOAD INPUT O. +

KSA643

Abstract: KSD261
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KSA643 TRANSISTOR PNP TO-92 1. EMITTER FEATURE z Collector dissipation z Complement to KSD261 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: KSD2058 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO -22 0 F ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO Sym bol 60 V C ollector E m itter Voltage VcEO 60 V Em itter Base Voltage V ebo 7

Contextual Info: KSD261 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSA643 • Collector Dissipation Pc =500mW ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Rating Unit Vceo V ceo V ebo lc Pc T¡ Tstg 40 20 5 500 500 150 - 5 5 '1 5 0

Contextual Info: KSA643 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSD261 • Collector Dissipation Pc =500mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)

KSB1366

Abstract: KSD2012
Contextual Info: KSB1366 KSB1366 LOW FREQUENCY POWER AMPLIFIER • Complement to KSD2012 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 60

KSD201

Abstract: KSB1366 KSD2012
Contextual Info: KSD2012 KSD2012 Low Frequency Power Amplifier • Complement to KSB1366 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units

KSD2058

Abstract: KSB1366
Contextual Info: Inchange Semiconductor Product Specification KSD2058 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type KSB1366 APPLICATIONS ・With general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220F and symbol

PNP 2N4403

Abstract: KSC1330 KSC839 KSA928 KSP2222A KSC2882 ksd999
Contextual Info: TRANSISTORS FUNCTION GUIDE TO-92 Type Transistors Continued Condition Device and Polarity NPN KSP6602 2N4401 KSP2222A 2N4400 2N3903 2N3904 KSP20 KSC1330 KSD471A KSD227 KSP5172 KSC184 KSD261 SS9013 MIN 1.2 2.6 1.2 0.95 10 10 20 10 20 50 20 20 20 10 100 200

KSA642

Abstract: KSD227
Contextual Info: KSA642 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Com plem ent to KSD227 • C ollector Dissipation P c =400mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Cosmo 101

Abstract: KSD210AC3
Contextual Info: cosmo KSD210AC3 Solid State Relay Features Outside Dimension : Unit 1. Molded epoxy body. mm j1Q.50t 4.5 5.0 2. Zero crossing circuit. 3. High input/output insulation. Date Code 4. Small size and light weight. xxx cosmo LOAD 10A 250VAC INPUT 5 to 12TOC TYPE KSD210AC3

Contextual Info: LED ELECTRONICS CORPORATION SOLID STATE RELAY TYPE KSD215AC8 INPUT 4-32VDC cosmo 58.00 250VAC 7.25 5.25 4 LOAD 2 + 3 2. SCHEMATIC : TOP VIEW 5.0 4.0 8.25 5.25 5.00 3.00 10.50 45.20 17.50 14.00 11.50 14.00 KSD215AC8 SOLID STATE RELAY 1. OUTSIDE DIMENSION : UNIT mm

COSMO 1010

Abstract: cosmo 1010 -817 IC cosmo 1010 cosmo 1010 datasheet Application of electronics circuits to lighting cosmo 1010 application cosmo 1010 -817-g16b KSD205AC3
Contextual Info: KSD205AC3 Solid State Relay Features Outside Dimension : Unit mm 1. Molded epoxy body. 2. Zero crossing circuit. 3. High input/output insulation. 4. Small size and light weight. 5. Can be installed directly on the PC board. 6. Fast reactive speed. 7. Normally open.

KSD210AC3

Abstract: 5to12VDC
Contextual Info: PRODUCT SPECIFICATION DATE: cosmo SOLID STATE RELAY: NO. 58032210 KSD210AC3 ELECTRONICS CORPORATION SHEET 1 OF 2 1. OUTSIDE DIMENSION : UNIT mm 10.50 24.00 LED 02.00 - 12. 0 0 » 4.5 5.0 A E s cosmo LOAD - 1 I _ r 10A 250VAC INPUT 5 to 12VDC TYPE KSD210AC3

KSD225AC3

Abstract: KSD22
Contextual Info: PRODUCT SPECIFICATION DATE: SOLID STATE RELAY: cosmo KSD225AC3 ELECTRONICS CORPORATION NO. 58032225 REV. SHEET 1 OF 2 3 1. OUTSIDE DIMENSION : UNIT mm 10.50 LED 02.00 cosmo o LOAD 25A 250VAC 01 INPUT 5 to 12VDC TYPE 4.5 5.0 E _I m KSD225AC3 LOAD INPUT

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD2058 LOW FREQUENCY POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit C ollecto r Base Voltage VcBO 60 V C ollecto r E m itter Voltage VcEO 60 V E m itter Base Voltage V ebo 7 V C ollecto r C urrent

Contextual Info: KSD227 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO -92 • Complement to KSA642 • Collector Dissipation Pc =400mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

KSD201

Abstract: ksb1366
Contextual Info: KSB1366 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220F • Complement to KSD2012 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic V cB O Sym bol - 60 V Collector Emitter Voltage VcEQ - 60 V Emitter Base Voltage

KSD203AC2

Abstract: KSD203 KSD203A VDRM600V
Contextual Info: PRODUCT SPECIFICATION cosm o SOLID STATE RELAY: KSD203AC2 ELECTRONICS CORPORATION SHEET 1 OF 2 1. OUTSIDE DIMENSION : UNIT mm 2. SCHEMATIC : TOP VIEW cosmo ELECTRONICS CORPORATION >«. LOAD 3A 250TAC X INPUT 4 to 32VDC X TYPE KSD203AC2 LOAD INPUT 'V +

KSD203DC2

Abstract: solid state electronics corporation relay ksd203dc2 cosmo
Contextual Info: PRODUCT SPECIFICATION SOLID STATE RELAY: cosm o SHEET 1 OF 2 KSD203DC2 ELECTRONICS CORPORATION 1. OUTSIDE DIMENSION : UNIT mm 2. SCHEMATIC : TOP VIEW cosmo ELECTRONICS CORPORATION LOAD 3A 100VDC X! INPUT 4 to 24VDC X TYPE KSD203DC2 LOAD INPUT + - + - i

KSD2058

Abstract: KSB1366
Contextual Info: SavantIC Semiconductor Product Specification KSD2058 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type KSB1366 APPLICATIONS ·With general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220F and symbol