KSD TRANSISTOR Search Results

KSB744

Abstract: KSB744A
Contextual Info: KSB744/744A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to KSD 794/KSD 794A A BSOLUTE M AXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V cbO Sym bol -70 V C ollector E m itter Voltage : KSB744 : KSB744A

Contextual Info: KSB744/744A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to KSD 794/KSD 794A ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V cbO Sym bol -70 V C ollector Em itter Voltage : KSB744 V cE O -45

ksd transistor

Contextual Info: KSB744/744A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to KSD 794/KSD 794A T O -126 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO S ym bol -70 V C ollector Em itter Voltage : KSB744

transistor BC SERIES

Abstract: bd transistor series BC transistor series BIPOLAR TRANSISTOR 2n transistor KSA transistor D.A.T.A. book ksd transistor series bd transistor data book
Contextual Info: TRANSISTOR DATA BOOK Small Signal TR KSA Ser es KSB Ser es KSC Ser es KSD Ser es KSK Ser es KSR Ser es 2N Ser es BC Ser es KST Ser es KSP Ser es SS Ser es Bipolar Power TR KSA Series KSB Series KSC Series KSD Series BD Series BU Series KSH Series KSE Series

Contextual Info: KSB1151 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO-126 HIGH POWER DISSIPATION: PC=1.3W TA=25°C Complement to KSD 1691 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcBO Symbol -6 0 V Collector-Emitter Voltage

Contextual Info: KSB1098 PNP SILICON DARLINGTON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE T O -220F • C om plem ent to KSD 1589 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic VcBO Sym bol - 100 V C ollecto r E m itter Voltage

Contextual Info: KSB707/708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSD 568/569 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit C ollector-Base Voltage VcBO -8 0 V C ollector-E m itter V oltage : B707

Contextual Info: KSB1097 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSD 1588 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage C haracteristic V cbO Sym bol - 80 V C ollecto r E m itter Voltage

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSB811 AUDIO FREQUENCY POWER AMPLIFIER T O -92S • C om plem ent to KSD 1021 • C ollector C urrent: lc= -1A • C ollector D issipation: Pc=350m W ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol Col lector-Base Voltage

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSB810 AUDIO FREQUENCY AMPLIFIER TO -92S • C om plem ent to KSD 1020 ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent (DC)

Contextual Info: KSB1121 PNP EPITAXIAL PLANAR SILICON TRANSISTOR HIGH CURRENT DRIVER APPLICATIONS • • • • Low C ollector-E m itter Saturation Voltage Large C urrent C apacity and W ide SO A Fast Sw itching Speed C om plem ent to KSD 1621 ABSOLUTE MAXIMUM RATING TA=25°C

Contextual Info: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

ksd 150 full safe

Abstract: K*D1691 ksd 75
Contextual Info: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSB1017 PNP SILICON EPITAXIAL TRANSISTOR POWER AMPLIFIER APPLICATIONS TO-22QF • C om plem ent to KSD 1408 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage C haracteristic V cbO Sym bol - 80 V C ollecto r E m itter Voltage VcEO - 80 V Em itter Base Voltage

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSB1151 LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT T O -126 HIGH PO W ER DISSIPATIO N : Pc= 1 .3 W TA=25°C C om plem ent to KSD 1691 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage Characteristic V cbO

ksd 150 full safe

Abstract: KSB1151
Contextual Info: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSB1116

Abstract: TRANSISTOR 1616 ac
Contextual Info: KSB1116/1116A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING • C om plem ent to KSD 1616/161 6A ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol C ollector-Base Voltage :K S B 1 1 1 6 : KSB1116A C ollector-E m ltter V oltage : KSB1116

Contextual Info: KSB1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-22QF • Low C ollecto r E m itter Saturation Voltage • C om plem ent to KSD 1406 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit C ollector Base Voltage V cbO - 60 V

Contextual Info: KSB907 PNP SILICON DARLINGTON TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • • High DC C urrent Gain Low C ollecto r E m itter Saturation Voltage Built in a D am per Diode at E-C D arlingt on TR C om plem ent to KSD 1222 ABSOLUTE MAXIMUM RATINGS

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSB906 LOW FREQUENCY POWER AMPLIFIER • Low C ollecto r E m itter Saturation Voltage • C om plem ent to KSD 1221 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic VcBO Sym bol - 60 V C ollecto r E m itter Voltage

Contextual Info: KSB707/708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSD 568/569 ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit C ollector-B ase Voltage V cbO - 80 V C ollector-E m ltter V oltage : B707

ksd 150 full safe

Abstract: KSB1151 ksd 75
Contextual Info: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSB1017

Abstract: KSD1408
Contextual Info: KSB1017 PNP SILICON EPITAXIAL TRANSISTOR POWER AMPLIFIER APPLICATIONS TO -2 2 0 F • Com plem ent to KSD 1408 ABSO LU TE MAXIMUM RATINGS Rating Unit Collector B ase Voltage Characteristic V cbO Symbol - 80 V Collector Emitter Voltage V cE O - 80 V Emitter Base Voltage

SD1616A

Abstract: 1616A KSD1616 KSD1616A
Contextual Info: FOI KSD 1616/1616A NPN E pitaxial Silicon Transistors Semiconductor AUDIO F R E Q U E N C Y POW ER AM PLIFIER M EDIUM S P E E D SW ITCHING • T O -9 2 Complement to KSD1616/1616A ABSOLUTE MAXIMUM RATINGS (Ta = 2 5 T: > C h a r a c te r is tic Collector-base Voltage :KSD1616