KSC2710
Abstract: No abstract text available
Text: KSA1150 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSC2710 • Collector Dissipation: PC = 300mW ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC (DC) IC(Pulse) PC TJ T STG Collector-Base Voltage
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KSA1150
KSC2710
300mW
O-92S
350ms,
cycle50%
KSC2710
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KSC2710
Abstract: KSA1150
Text: KSC2710 KSC2710 Low Frequency Power Amplifier • Complement to KSA1150 • Collector Dissipation : PC=300mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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KSC2710
KSA1150
300mW
O-92S
KSC2710
KSA1150
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KSC2710
Abstract: No abstract text available
Text: KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter
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KSA1150
300mW
KSC2710
O-92S
PW350ms,
cycle50%
Breakdow63
O-92S
KSC2710
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KSC2710
Abstract: No abstract text available
Text: KSC2710 KSC2710 Low Frequency Power Amplifier • Complement to KSA1150 • Collector Dissipation : PC=300mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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KSC2710
KSA1150
300mW
O-92S
KSC2710
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KSA1150 TRANSISTOR PNP 1. EMITTER FEATURES z General Purpose Switching Application 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-92S
KSA1150
-10mA
-100mA
-500mA
-50mA
-20mA,
30MHz
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KSC2710
Abstract: KSA1150
Text: KSC2710 KSC2710 Low Frequency Power Amplifier • Complement to KSA1150 • Collector Dissipation : PC=300mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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KSC2710
KSA1150
300mW
O-92S
KSC2710
KSA1150
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KSA1150
Abstract: KSC2710
Text: KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter
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Original
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KSA1150
300mW
KSC2710
O-92S
PW350ms,
cycle50%
KSA1150
KSC2710
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KSA1150
Abstract: KSC2710
Text: KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter
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KSA1150
300mW
KSC2710
O-92S
PW350ms,
cycle50%
KSA1150
KSC2710
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KSC2710
Abstract: KSA1150
Text: KSC2710 KSC2710 Low Frequency Power Amplifier • Complement to KSA1150 • Collector Dissipation : PC=300mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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PDF
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KSC2710
KSA1150
300mW
O-92S
KSC2710
KSA1150
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KSA1150
Abstract: KSC2710
Text: KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter
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Original
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KSA1150
300mW
KSC2710
O-92S
PW350ms,
cycle50%
KSA1150
KSC2710
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Untitled
Abstract: No abstract text available
Text: KSA1150 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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KSA1150
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c546b
Abstract: c557b of bc 237 b C547B c558b BC 9014 ba W61C c 557b 082BC w61b
Text: NPN General Purpose Amplifiers & Switches Device No. [Mark] B C W65C [ED ] Case Style TO-236 49 V CEO (V) Min 32 B C X 58 TO-92 (97) 32 BSR14 [U8] TO-236 (49) 40 V CBO VCES* (V) Min 60 75 V EBO (V) Min 5 I CBO ICES* (nA) Max 20* @ VCB (V) 32 TO-236 (49)
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O-236
c546b
c557b
of bc 237 b
C547B
c558b
BC 9014
ba W61C
c 557b
082BC
w61b
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thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™
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Untitled
Abstract: No abstract text available
Text: KSA1150 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER T O -9 2 S • Complement to KSC2710 • Collector Dissipation Pc = 300mW ABSOLUTE MAXIMUM RATINGS Ta=250C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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KSA1150
KSC2710
300mW
350/is,
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2710 LOW FREQUENCY POWER AMPLIFIER • Complement to KSA1150 • Collector Dissipation Pc = 300mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol R atin g Unit VcBO VcEO V ebo 40 20 5 500 300 150 -5 5 -1 5 0 V
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KSC2710
KSA1150
300mW
Qa24700
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Untitled
Abstract: No abstract text available
Text: KSA1150 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSC2710 • Collector Dissipation Pc ” 300mW ABSOLUTE MAXIMUM RATINGS TA=25t:} C haracteristic Sym bol Collector-Base Voltage CoNector-Emitter Voltage Emitter-Base Voltage
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KSA1150
KSC2710
300mW
O-92S
fi350m
-100mA
-500mA,
-50mA
-50mA
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ksd 168
Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
Text: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220
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KSA473
KSA539
KSA542
KSA614
KSA642
KSA643
KSA708
KSA709
KSA733
KSA812
ksd 168
KSA 1102
ksd 301
ksp13 601
KSD 105
13003 bd
KSR1107
SA1142
13003 sd
KSC5027
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Untitled
Abstract: No abstract text available
Text: KSC2710 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSA1150 • Collector Dissipation Pc“ 300mW ABSOLUTE MAXIMUM RATINGS TA- 2 5 t Characteristic Symbol Collector-Base Vottage Collector-Emttter Voltage Emitter-Base Voltage
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KSC2710
KSA1150
300mW
O-92S
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KSA1150 LOW FREQUENCY POWER AMPLIFIER T O -92S • C om plem ent to KSC2710 • C ollector D issipation: Pc = 300 m W ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage
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KSA1150
KSC2710
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KSD 303
Abstract: ksd 180 ksd 168 bd681 9 435 tip bc548 TIP BD140 BC548 ksd 201 ksc5386 KSP20
Text: ALPHANUMERIC INDEX 1. KSA Series D evice Page Device Page D evice Page KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 KSA1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182
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KSA473
KSA539
KSA542
KSA614
KSA642
KSA643
KSA708
KSA709
KSA733
KSA812
KSD 303
ksd 180
ksd 168
bd681 9 435
tip bc548
TIP BD140
BC548
ksd 201
ksc5386
KSP20
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KSD 166
Abstract: KSD 168 kst 232 KSC1845 KST1623 ksc2328 KSR1001 KSD201 ksp94 TIP41 342
Text: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 KSA1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220 KSA1241
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KSA473
KSA539
KSA542
KSA614
KSA642
KSA643
KSA708
KSA709
KSA733
KSA812
KSD 166
KSD 168
kst 232
KSC1845
KST1623
ksc2328
KSR1001
KSD201
ksp94
TIP41 342
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)
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0Q11524
OT-23
KST1009F2
KST1009F3
KST1009F4
KST1009F5
KST4124
KST4126
BCW29
O-92S
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BD53A
Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623
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OT-23
KSC2223
KSC2715
KSC1623
KSC2715
KSC1674
BD53A
KSA733
KSC1330
KSC945
BD139
BD433 TO92
KSE 13007 L
ss8050 sot-23
KSE13009F
KSP10
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transistor 13003 AD
Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)
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OT-23
KST06
KST05
KSC1623
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
transistor 13003 AD
ksd-180
HF 13003
KSD180
13003 HF
KSD168
KSD966
ksd-168
PNP NPN Transistor VCEO 120V 100V Ic 7A
KSC 1.5k 250v
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