KRA30 Search Results

KRA309

Contextual Info: SEMICONDUCTOR KRA309 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PJ 1 2 Item Marking Description Device Mark PJ KRA309 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

marking pf 51

Abstract: KRA306
Contextual Info: SEMICONDUCTOR KRA306 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PF 1 2 Item Marking Description Device Mark PF KRA306 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA305E

Abstract: marking pe
Contextual Info: SEMICONDUCTOR KRA305E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PE No. 2006. 4. 14 Item Marking Description Device Mark PE KRA305E hFE Grade - - Revision No : 0 1/1

KRA305

Contextual Info: SEMICONDUCTOR KRA305 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PE 1 2 Item Marking Description Device Mark PE KRA305 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

marking PC

Abstract: KRA303E mark pc
Contextual Info: SEMICONDUCTOR KRA303E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PC No. 2000. 12. 27 Item Marking Description Device Mark PC KRA303E hFE Grade - - Revision No : 0 1/1

KRA301

Abstract: KRA302 KRA303 KRA304 KRA305 KRA306
Contextual Info: SEMICONDUCTOR KRA301~KRA306 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M With Built-in Bias Resistors. D 2 J A Simplify Circuit Design. 3 1 G Reduce a Quantity of Parts and Manufacturing Process.

KRA304

Abstract: marking pd
Contextual Info: SEMICONDUCTOR KRA304 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PD 1 2 Item Marking Description Device Mark PD KRA304 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA302

Contextual Info: SEMICONDUCTOR KRA302 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PB 1 2 Item Marking Description Device Mark PB KRA302 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: SEM ICONDUCTOR KRA307E-KRA309E TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S Î r — • With Built-in Bias Resistors • Simplify Circuit Design DIM

MARK 006

Abstract: transistor 309 pj marking KRA307 KRA308 KRA309
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. KRA307 — SEMICONDUCTOR KRA309 EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors Simplify Circuit Design

Contextual Info: SEMICONDUCTOR KRA301~KRA306 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 10. 30 Revision No : 5 1/6

Contextual Info: SEMICONDUCTOR KRA301E~KRA306E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. D H G A 2 Reduce a Quantity of Parts and Manufacturing Process.

KRA307

Abstract: KRA308 KRA309 DSA00384749
Contextual Info: SEMICONDUCTOR KRA307~KRA309 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ᴌWith Built-in Bias Resistors ᴌSimplify Circuit Design D 3 1 G ᴌReduce a Quantity of Parts and Manufacturing Process

pj marking

Contextual Info: SEMICONDUCTOR KRA307V~KRA309V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors ・Simplify Circuit Design H G A ・High Packing Density. D 2

KRA303

Contextual Info: SEMICONDUCTOR KRA303 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PC 1 2 Item Marking Description Device Mark PC KRA303 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA307E

Abstract: KRA308E KRA309E
Contextual Info: SEMICONDUCTOR KRA307E~KRA309E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors Simplify Circuit Design D H G A 2 Reduce a Quantity of Parts and Manufacturing Process

KRA307

Contextual Info: SEMICONDUCTOR KRA307 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PH 1 2 Item Marking Description Device Mark PH KRA307 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: SEMICONDUCTOR KRA307~KRA308 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ・With Built-in Bias Resistors ・Simplify Circuit Design D G ・Reduce a Quantity of Parts and Manufacturing Process

Contextual Info: SEMICONDUCTOR KRA302VS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. H G A ・High Packing Density. D 2 ・Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRA307E~KRA309E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors ・Simplify Circuit Design D DIM A B C D G A 2 H ・Reduce a Quantity of Parts and Manufacturing Process

KRA307E

Abstract: KRA308E KRA309E
Contextual Info: SEMICONDUCTOR KRA307E~KRA309E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ᴌWith Built-in Bias Resistors ᴌSimplify Circuit Design D H G A 2 ᴌReduce a Quantity of Parts and Manufacturing Process

KRA307E

Contextual Info: SEMICONDUCTOR KRA307E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PH No. Item Marking 1 Device Mark PH KRA307E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1

marking PB

Abstract: KRA302E
Contextual Info: SEMICONDUCTOR KRA302E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PB No. 2000. 12. 27 Item Marking Description Device Mark PB KRA302E hFE Grade - - Revision No : 0 1/1

KRA307

Abstract: KRA308 KRA309
Contextual Info: SEMICONDUCTOR KRA307~KRA309 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ・With Built-in Bias Resistors ・Simplify Circuit Design D 3 1 G ・Reduce a Quantity of Parts and Manufacturing Process