KMM366S403CTL Search Results
KMM366S403CTL Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| KMM366S403CTL |
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PC66 SDRAM MODULE | Original | |||
| KMM366S403CTL-G0 |
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4M x 64 SDRAM DIMM based on 2M x 8, 4K Refresh, 3.3V Synchronous DRAM with SPD | Original |
KMM366S403CTL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
KMM366S403CTL-GOContextual Info: KMM366S403CTL PC66 SDRAM MODULE KMM366S403CTL SDRAM DIMM 4 M x 6 4 S D R A M D IM M b a se d on 2 M x 8 ,4 K R efresh, 3 .3 V S y n c h ro n o u s D R A M s w ith S P D GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung |
OCR Scan |
KMM366S403CTL KMM366S403CTL 400mil 168-pin 000DIA KM48S2020CT KMM366S403CTL-GO | |
KM48S2020CT-G10
Abstract: KMM366S403CTL KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G
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Original |
KMM366S403CTL 200mV. KMM366S403CTL 4Mx64 66MHz KM48S2020CT-G10 KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G | |
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Contextual Info: KMM366S403CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs): ±5uA to ±1uA. -Input leakage currents (I/O ): ±5uA to ±1.5uA. |
OCR Scan |
KMM366S403CTL 200mV. 4Mx64 KMM366S403CTL 150Max KM48S2020CT | |
KM48S2020CT G10
Abstract: KMM366S403CTL KMM366S403CTL-G0
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Original |
KMM366S403CTL 200mV. KMM366S403CTL 4Mx64 KM48S2020CT KM48S2020CT G10 KMM366S403CTL-G0 | |
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Contextual Info: KMM366S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •S om e Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : + 5 u A to ± 1 .5uA. |
OCR Scan |
KMM366S403CTL 200mV. KMM366S403CTL 4Mx64 150Max KM48S2020CT |