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KMA2D8P20X Abstract: Marking 52 tsop 6 marking A1 6 Text: SEMICONDUCTOR KMA2D8P20X MARKING SPECIFICATION TSOP-6 PACKAGE 1. Marking method Laser Marking. 2. Marking M05 1 01 2 3 No. Item Marking Description Device Mark M05 KMA2D8P20X * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1	Original	PDF	KMA2D8P20X KMA2D8P20X Marking 52 tsop 6 marking A1 6
KMA2D8P20X Abstract: No abstract text available Text: SEMICONDUCTOR KMA2D8P20X TECHNICAL DATA P-CH Trench MOSFET General Description It’s mainly suitable for battery pack or power management in cell phone, and PDA. D H FEATURES ・VDSS=-20V, ID=-2.8A. J E ・Drain-Source ON Resistance. : RDS ON =90mΩ(Max.) @ VGS=-4.5V	Original	PDF	KMA2D8P20X KMA2D8P20X
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR KMA2D8P20X TECHNICAL DATA P-CH Trench MOSFET General Description It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES 2007. 3. 22 Revision No : 1 1/5	Original	PDF	KMA2D8P20X
KMA2D8P20X Abstract: No abstract text available Text: SEMICONDUCTOR KMA2D8P20X TECHNICAL DATA P-CH Trench MOSFET General Description It’s mainly suitable for battery pack or power management in cell phone, and PDA. A F 6 FEATURES C 4 B1 VDSS=-20V, ID=-2.8A. Drain-Source ON Resistance. 1 3 : RDS ON =90m (Max.) @ VGS=-4.5V	Original	PDF	KMA2D8P20X KMA2D8P20X
9n90c Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W	Original	PDF	2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS