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    YC 2604

    Abstract: No abstract text available
    Text: KM41C1000BI­ CMOS DRAM 1M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The S am sung KM41C1000BL is a CMOS high speed 1,048,576 x 1 D ynam ic Random A ccess Memory. Its de­ sign is op tim ize d fo r high pe rform ance ap p lica tio n s


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    PDF KM41C1000BI 130ns 150ns 180ns KM41C1000BL 18-LEAD 20-LEAD YC 2604

    KM41C1000B-8

    Abstract: KM41C1000B
    Text: SAMSUNG ELECTRONICS INC 4SE D • 7 ^ 4 1 4 2 0G10022 5 KM41C1000B CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: two • • • • • • • • • tcAQ The Samsung KM41C1000B is a CMOS high speed


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    PDF 0G10022 KM41C1000B KM41C1000B-6 110ns KM41C1000B-7 130ns KM41C1000B-8 KM41C1000B-10 KM41C1000B 576x1 KM41C1000B-8