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Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b7E » • DG17D77 GTD ■ SriGK PRELIMINARY 7^4142 KM23V16100A CMOS MASK ROM 16M-Bit 2M x8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152X 8 bit organization • Fast access tim e: 200ns(max.) • Supply voltage: single+3V or +3.3V	OCR Scan	PDF	DG17D77 KM23V16100A 16M-Bit 200ns 36-pin, KM23V16100A KM23V16100A)
Untitled Abstract: No abstract text available Text: PRELIMINARY KM23V16100A CMOS MASK ROM 16M-Bit 2M x8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x8 bit organization • Fast access time : 200ns(max.) • Supply voltage : single+3V or +3.3V • Current consumption Operating : 25 mA(max.) at VCC=3.0V± 0.3	OCR Scan	PDF	KM23V16100A 16M-Bit 152x8 200ns 36-pin, 600mil, KM23V16100A KM23V16100A-25 KM23V16100A-30 KM23V161OOA
al 232 nec Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258	OCR Scan	PDF	KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
KM23C8001 Abstract: 32-sop Text: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E	OCR Scan	PDF	KM23C256 KM23C512 KC23C1000 KM23C1001 KM23C1010 KM23C1010J KM23C1011 32Kx8 128Kx 256KX KM23C8001 32-sop