U1897E
Abstract: U1899E 2N4978 U1898E uc250 uc251 2N4393 2N4858 2N4977 UC130
Text: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) Crss Max (pF) Vgs (off) Min (V) Vgs (off) Max (V) Idss Min (v) 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4856 2N4856A 2N4857 2N4857A 2N4858 2N4858A
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2N3824
2N3966
2N3970
2N3971
2N3972
2N4091
2N4092
2N4093
2N4391
2N4392
U1897E
U1899E
2N4978
U1898E
uc250
uc251
2N4393
2N4858
2N4977
UC130
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IN5314
Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Text: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)
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UC4250*
UC42500
MIL-STD-883C,
19S00/
2N7109*
SDF8200
FMN35
SDF8201Â
FMNZ35
SDF8202
IN5314
IN5309
IN5286
2N5163
2NB906
IN5313
U1897E
2N3456
UC4250
in5297
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2NB906
Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Text: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style
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UC4250»
UC4250C»
MIL-STD-883C,
2N2609
2N3821
2N3822
2N3823
2N4856
2N4857
2N48S8
2NB906
IN5313
2NB90
IN5286
IN5296
solitrondevices
IN5302
in5287
IN5306
2N5902 TO-92
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TIS88A equivalent
Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.
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20x40
111x109
TIS88A equivalent
2N3456 equivalent
J411 fet
2n5952 equivalent
2n3820 equivalent
2N5248 equivalent
fet 2N4304
2n5245 equivalent
2N4304 equivalent
2N5454 equivalent
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Untitled
Abstract: No abstract text available
Text: L O W P O W E R F IE L D EFFEC T T R A N S IS T O R S W0¥ G»©s Type Number Case Style T O - Geometry •BVDgo or BVgss Min (V) Ciss Max (PF) Crss Max (PF) Vgs (off) Min Max (V) Idss Max Min (mA) Igss or •Idgo Max (nA) R(on) Max (ohms) 0.10 1.00 • .25
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2N3824
2N3966
2N3970
2N3971
2N3972
2N4091
2N4092
2N4093
2N4391
2N4392
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kk3819
Abstract: kk4223
Text: T -3 5 -2 5 ' sod Ô3bflbü2 DÜDBbflD S4T 4ÖE D SOLITRON DEVICES INC A T M , © L O W P O W E R FIELD E F F E C T T R A N S I S T O R S m m /M L •BVDgo o: BVgss Case Min Type Style Numbei T O - I Geometi ? (V 18 FN22.2 50 2N3066 2N3067 18 FN22.2
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2N3066
2N3067
2N3068
2N3069
2N3070
2N3071
2N3085
2N3087
2N3089
2N3089A
kk3819
kk4223
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2N3824
Abstract: 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392
Text: LOW P O W E R FIELD EFFE C T T R A N S IS T O R S IF if: Type Number Case Style T O - Geometry •BVDgo or BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) _ Idss Max Min (mA) Igss or •Idgo Max (nA) R(on) Max (ohms) T(on) Max (nS) T(off)
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2N3824
2N3966
2N3970
2N3971
2N3972
2N4091
2N4092
2N4093
2N4448
2N5432
2N4391
2N4392
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DIE CHIP 2N4091
Abstract: 2N4393 DIE CHIP
Text: ÄTTÄ[L N-CH ANNEL JUNCTIO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .023" It is advisable that: a the die be eutectically mounted with gold silicon preform 98/2%.
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584mm)
0254mm)
100mV,
DIE CHIP 2N4091
2N4393 DIE CHIP
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2N4360
Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
Text: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.
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MFE2001
MFE2C04
MFE2005
MFE2006
MFE2133
MPF102
MPF108
MPF109
MPF111
MPF112
2N4360
2N3459
J411 fet
Solitron 2N3821
U1898E
2N5906
TIS58
MEM511
2N3920
uc451
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ATML U 106
Abstract: ATML 350 UC758 2N5902 TO-92 2N5045 J2N5670 2N3966 ATML U ATML U 010 2N3070
Text: flnlitran_ [F>[a iB y)©'ir ©Mm.©© Devices. Inc. L O W P O W E R FIE L D E F F E C T T R A N S I S T O R S (ÜHNIIIIMIL Type Num ber •BVDgo or BVgss C ase Min Style ( T O - ) G eom etry (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min
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2N3066
2N3067
2N3068
2N3069
2N3070
2N3071
2N3085
2N3087
2N3089
2N3089A
ATML U 106
ATML 350
UC758
2N5902 TO-92
2N5045
J2N5670
2N3966
ATML U
ATML U 010
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Untitled
Abstract: No abstract text available
Text: N -C H A N N E L J U N C T IO N FET CHIP NUMBER GW-1] CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEM BLY RECOMMENDATIONS .023" 0.584mm Dm Size: It is advisable that: 18 x 2 3 a) the die be eutectically mounted with gold silicon preform 98/2%.
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584mm)
0254mm)
2N4091
2N4093,
2N4391
2N4393,
2N4856
2N4861,
KK4391
KK4393
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2N4393
Abstract: DIE CHIP 2N4091 2N4091 2N4093 2N4391 2N4856 2N4861 KK4391 KK4393
Text: -Ælttran [¡^ EiüKgTr ©Äim © Devices. Inc N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALUZATLON Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .023" (0.584mm It is advisable that: a) the die be eutecticaUy mounted with gold silicon preform 98/2% .
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584mm)
0254mm)
2N4393
DIE CHIP 2N4091
2N4091
2N4093
2N4391
2N4856
2N4861
KK4391
KK4393
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