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    KIY TRANSISTORS Search Results

    KIY TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    KIY TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LH8550PLT1G Series FEATURE 3 ƽHigh current capacity in compact package. IC =-1.5A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: LH8550 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		LH8550PLT1G LH8550 3000/Tape LH8550PLT3G 10000/Tape LH8550QLT1G LH8550QLT3G PDF

    KIY transistors

    Abstract: LH8550 LH8550QLT1G kiy NPN KIY transistor transistor marking KIY marking KIY 060PIN LH8550PLTIG
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LH8550PLTIG Series FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: LH8550 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		LH8550PLTIG LH8550 LH8550PLT1G 3000/Tape LH8550PLT3G 10000/Tape LH8550QLT1G LH8550QLT3G KIY transistors LH8550 LH8550QLT1G kiy NPN KIY transistor transistor marking KIY marking KIY 060PIN LH8550PLTIG PDF

    LH8550QLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LH8550PLT1G Series S-LH8550PLT1G Series FEATURE ƽHigh current capacity in compact package. IC =-1.5A. ƽEpitaxial planar type. ƽPNP complement: LH8550 3 ƽPb-Free Package is available. ƽ S- Prefix for Automotive and Other Applications Requiring Unique


    Original     		LH8550PLT1G S-LH8550PLT1G LH8550 AEC-Q101 3000/Tape LH8550PLT3G 10000/Tape LH8550QLT1G LH8550QLT3G LH8550QLT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LH8550PLT1G Series FEATURE 3 ƽHigh current capacity in compact package. IC =-1.2A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: LH8550 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		LH8550PLT1G LH8550 3000/Tape LH8550PLT3G 10000/Tape LH8550QLT1G LH8550QLT3G PDF

    KIY transistors

    Abstract: marking KIY LH8550PLT1G lh8550
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LH8550PLT1G Series S-LH8550PLT1G Series FEATURE ƽHigh current capacity in compact package. IC =-1.5A. ƽEpitaxial planar type. ƽPNP complement: LH8550 3 ƽPb-Free Package is available. ƽ S- Prefix for Automotive and Other Applications Requiring Unique


    Original     		LH8550PLT1G S-LH8550PLT1G LH8550 AEC-Q101 3000/Tape LH8550PLT3G 10000/Tape LH8550QLT1G LH8550QLT3G KIY transistors marking KIY LH8550PLT1G lh8550 PDF

    power transistor mrc 438

    Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
    Text: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase


    OCR Scan     		23SbQS 0Q043bfl BD434 BD440 BD442 434/BD 436/BD BD434. BD438. fl23SbO power transistor mrc 438 mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439 PDF

    Untitled

    Abstract: No abstract text available
    Text: ykiyjxiyki 19-4454, Rev. 0; 8/91 Quad, H igh-Side P ow er S w itch The +4.5V to +16.5V input supply range and a typical quiescent current of only 70/jA make the MAX625 ideal for a wide range of line- and battery-powered switching and control applications that require high efficiency and


    OCR Scan     		70/jA MAX625 MAX625 PDF

    HCNW4506

    Abstract: No abstract text available
    Text: Thpt H E W L E T T mL/ÍM P A C K A R D Intelligent Power Module and Gate Drive Interface Optocouplers HCPL-4506 h c p l-j4 5 6 HCPL-0466 HCNW4506 Technical Data Features • Performance Specified for Common IPM Applications over Industrial Temperature Range: -40°C to 100°C


    OCR Scan     		HCPL-4506 HCPL-0466 HCNW4506 HCPL-4506/0466 HCPL-J456 HCPL-4506 HCNW4506 PDF