Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G8421/G8371/G5851 series Long wavelength type Cut-off wavelength: 1.85 to 1.9 m Features Applications Long cut-off wavelength: 1.85 to 1.9 m Optical power meter 3-pin TO-18 package: low price Gas analyzer Thermoelectrically cooled TO-18 package: low dark current
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G8421/G8371/G5851
A3179
A3179-01
C1103-04
SE-171
KIRD1046E06
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type up to 2.1 µm Features Applications l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm
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G8422/G8372/G5852
G8422-03
G8422-05
G8372-01
G8372-03
G5852-103
G5852-11
G5852-13
G5852-203
G5852-21
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G8422/G8372/G5852 series Long wavelength type Cut-off wavelength: 2.05 to 2.1 m Features Applications Cut-off wavelength: 2.05 to 2.1 m Gas analyzer 3-pin TO-18 package: low price Water content analyzer TE-cooled type TO-8 package: low dark current
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G8422/G8372/G5852
A3179
A3179-01
C1103-04
G8422-03
G8422-05
G8372-01
G8372-03
G5852-103
G5852-11
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C1103
Abstract: No abstract text available
Text: INFRARED DETECTOR PbS photoconductive detector P394 series, P2532-01, P2682-01 Infrared detectors utilizing photoconductive effects Features Applications l Room temperature operation Makes PbS cells useful in a wide range of applications including radiation thermometers and flame monitors
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P2532-01,
P2682-01
SE-171
KIRD1019E05
C1103
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uv PHOTO detector
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S2592/S3477 series Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR S2592/S3477 series sensors combine a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included in the same
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S2592/S3477
S2592
S3477
C1103-04)
A3179
SE-171
KSPD1003E05
uv PHOTO detector
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current
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G8605
SE-171
KIRD1049E03
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Untitled
Abstract: No abstract text available
Text: INFRARED DETECTOR PbSe photoconductive detector P791/P2038/P2680 series, P3207-05 Detection capability up 5 µm range TE-cooled type Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled
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P791/P2038/P2680
P3207-05
SE-171
KIRDA1020E02
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Untitled
Abstract: No abstract text available
Text: INFRARED DETECTOR PbS photoconductive detector P394 series, P2532-01, P2682-01 Infrared detectors utilizing photoconductive effects Features Applications l Room temperature operation Makes PbS cells useful in a wide range of applications including radiation thermometers and flame monitors
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P2532-01,
P2682-01
SE-171
KIRD1019E03
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C1103
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S2592/S3477 series Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR S2592/S3477 series sensors combine a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included in the same
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S2592/S3477
S2592
S3477
C1103-04)
A3179
SE-171
KSPD1003E06
C1103
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photoconductive cells characteristic
Abstract: No abstract text available
Text: INFRARED DETECTOR PbSe photoconductive detector P791/P2038/P2680 series, P3207-05 Detection capability up 5 µm range TE-cooled type Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled
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P791/P2038/P2680
P3207-05
SE-171
KIRDA1020E05
photoconductive cells characteristic
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
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G8605
SE-171
KIRD1049E02
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G8423/G8373/G5853 series Long wavelength type Cut-off wavelength: 2.55 to 2.6 m Features Applications Cut-off wavelength: 2.55 to 2.6 m Gas analysis 3-pin TO-18 package: low price Spectrophotometer Thermoelectrically cooled TO-8 package: low dark current
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G8423/G8373/G5853
A3179
A3179-01
C1103-04
SE-171
KIRD1048E05
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N10110
Abstract: No abstract text available
Text: INFRARED DETECTOR InAs photovoltaic detector P8079 series, P7163 Infrared detectors with high sensitivity and high-speed response InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 µm. These detectors offer better characteristics than PbSe photoconductive detectors.
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P8079
P7163
A31Telephone:
SE-171
KIRD1027E06
N10110
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8421/G8371/G5851 series Long wavelength type Features Applications l Long cut-off wavelength: 1.9 µm l Optical power meter l 3-pin TO-18 package: low price l Gas analyzer l Thermoelectrically cooled TO-18 package: low dark current l NIR near infrared photometry
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G8421/G8371/G5851
A3179
A3179-01
C1103-04
SE-171
KIRD1046E05
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S2381
Abstract: S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S8611 Si apd photodiode rangefinder
Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings
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S2381
S2385,
S5139,
S8611,
S3884
S2381
S2382
S5139
S8611
S2383
S2382
S2383
S2383-10
S2384
S2385
S3884
S5139
S8611
Si apd photodiode rangefinder
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near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
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KSPD0001E09
near IR photodiodes
S8745-01
S8558
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G8422/G8372/G5852 series Long wavelength type Cut-off wavelength: 2.05 to 2.1 m Features Applications Cut-off wavelength: 2.05 to 2.1 m Gas analyzer 3-pin TO-18 package: low price Water content analyzer TE-cooled type TO-8 package: low dark current
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G8422/G8372/G5852
C4159-03
A3179
A3179-01
C1103-04
G8422-03
G8422-05
G8372-01
G8372-03
G5852-103
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D∗. One-stage (-10 °C) and two-stage (-20 °C) thermoelectrically cooled types are provided.
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G8605
KIRD1049E06
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G8421/G8371/G5851 series Long wavelength type Cut-off wavelength: 1.85 to 1.9 m Features Applications Long cut-off wavelength: 1.85 to 1.9 m Optical power meter 3-pin TO-18 package: low price Gas analyzer Thermoelectrically cooled TO-18 package: low dark current
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G8421/G8371/G5851
C4159-03
A3179
A3179-01
C1103-04
G8421-03
G8421-05
G8371-01
G8371-03
G5851-103
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A3179
Abstract: A3179-01 C1103-04 C4159-02 C4159-03 G8605 G8605-11 G8605-12 G8605-13 G8605-15
Text: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
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G8605
SE-171
KIRD1049E02
A3179
A3179-01
C1103-04
C4159-02
C4159-03
G8605-11
G8605-12
G8605-13
G8605-15
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C4159-03
Abstract: c4159 e G8605-13 G8605-15 A3179 A3179-01 C1103-04 C4159-02 G8605 G8605-11
Text: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
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G8605
SE-171
KIRD1049E01
C4159-03
c4159 e
G8605-13
G8605-15
A3179
A3179-01
C1103-04
C4159-02
G8605-11
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pth thermistor
Abstract: metal detector AC Photonics metal detector diagram uv PHOTO detector A3179 C1103-04 S1336 S2592 S2592-03
Text: PHOTODIODE Si photodiode S2592/S3477 series Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR S2592/S3477 series sensors combine a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included in the same
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S2592/S3477
S2592
S3477
C1103-04)
A3179
SE-171
KSPD1003E02
pth thermistor
metal detector
AC Photonics
metal detector diagram
uv PHOTO detector
C1103-04
S1336
S2592-03
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A3179
Abstract: A3179-01 C1103-04 P4631-01 P7163 P8079 P8079-01 P8079-11 P8079-21 c4159 e
Text: INFRARED DETECTOR InAs photovoltaic detector P8079 series, P7163 Infrared detectors with high sensitivity and high-speed response InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 µm. These detectors offer better characteristics than PbSe photoconductive detectors.
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P8079
P7163
SE-171
KIRD1027E06
A3179
A3179-01
C1103-04
P4631-01
P7163
P8079-01
P8079-11
P8079-21
c4159 e
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Untitled
Abstract: No abstract text available
Text: InAs photovoltaic detectors P10090 series P7163 Low noise, high reliability infrared detectors for 3 m band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that
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P10090
P7163
P8079
P7163)
KIRD1099E07
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