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KHB9D0N50F2 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KHB9D0N50F2		Korea Electronics	N CHANNEL MOS FIELD EFFECT TRANSISTOR		Original	PDF

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Catalog Datasheet	MFG & Type	PDF	Document Tags
9d0n50f Abstract: KHB9D0N50F2 9D0N50 KHB9D0N50F khb 9d0n50f Text: SEMICONDUCTOR KHB9D0N50F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 9D0N50F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB9D0N50F2 KHB9D0N50F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009	Original	PDF	KHB9D0N50F2 O-220IS 9D0N50F 9d0n50f KHB9D0N50F2 9D0N50 KHB9D0N50F khb 9d0n50f
KHB9D0N50F1 Abstract: ID9AJ KHB9D0N50F2 KHB9D0N50P1 KHB9D0N50F Text: SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	PDF	KHB9D0N50P1/F1/F2 KHB9D0N50P1 Fig15. Fig16. Fig17. KHB9D0N50F1 ID9AJ KHB9D0N50F2 KHB9D0N50P1 KHB9D0N50F
KHB9D0N50F1 Abstract: KHB9D0N50P1 36 W ballast KHB9D0N50F Text: SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	PDF	KHB9D0N50P1/F1/F2 KHB9D0N50P1 KHB9D0N50P1 dI/dt200A/, KHB9D0N50F1 36 W ballast KHB9D0N50F
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
KHB9D0N50F1 Abstract: TJ-108 kq9n50p Text: SEMICONDUCTOR KQ9N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description TENTATIVE This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	PDF	KQ9N50P/F KQ9N50P Fig15. Fig16. Fig17. KHB9D0N50F1 TJ-108 kq9n50p