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    Photodiode-Array

    Abstract: G8921-01 KGPD1009E02 SE-171
    Text: PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)


    Original     		G8921-01 SE-171 KGPD1009E02 Photodiode-Array G8921-01 KGPD1009E02 PDF

    16 Photodiode-Array

    Abstract: Photodiode-Array SE-171 G8921-01 KGPD1009E02 GaAs photodiode operating temperature range
    Text: PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)


    Original     		G8921-01 SE-171 KGPD1009E02 16 Photodiode-Array Photodiode-Array G8921-01 KGPD1009E02 GaAs photodiode operating temperature range PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)


    Original     		G8921-01 SE-171 KGPD1009E02 PDF