NM6403
Abstract: digital mobile radio
Text: Wd\ZeZca_juk_f_ckl\Z 8/') 10 gZijhp_kkhj_NeuroMatrix NM6403 Hkbih\<= l_e nZdk E-mail: osipov@module.vympel.msk.ru :GGHL:PBY D gZklhys_fm \j_f_gb bamq_gh b ihkljh_gh fgh`_kl\h jZaebqguo mkljhckl\ ij_^gZagZq_gguo ^ey \ujZ\gb\Zgby
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NM6403
NM6403
digital mobile radio
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hd49811
Abstract: HD49811TFA CCD-Sensor HD49815 HD49323AF-01 HD49815TF TFP-120 SINGLE-CHIP CCD COLOR CAMERA OA47 11 mm CCD-Sensor
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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AN 7062
Abstract: EM25LV010 JESD22-A114A J-STD-020A ST10
Text: EM25LV010 1 Megabit 128K x 8 Serial Flash Memory SPECIFICATION General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and
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EM25LV010
EM25LV010
23/Bldg.
AN 7062
JESD22-A114A
J-STD-020A
ST10
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2A1144
Abstract: B9124 charmilles d10 MARKING KGE 156 35v m6 93
Text: Edge6420 Per-Pin Electronics Companion DAC PRELIMINARY HIGH-PERFORMANCE PRODUCTS – ATE Description Features 64 Total DACs/Package Including: • Wide Voltage Output Range 17V Range ; Useful for Supervoltage • 44 Voltage DACs / Package • 20 Current DACs / Package
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Edge6420
Edge6420
0000V
2A1144
B9124
charmilles d10
MARKING KGE
156 35v m6 93
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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do5-900
Unit2607
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EM25LV512
Abstract: JESD22-A114A J-STD-020A ST10
Text: EM25LV512 512 K 64K x 8 Bits Serial Flash Memory SPECIFICATION General Description The EM25LV512 is a 512K bits Flash memory organized as 64K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and
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EM25LV512
EM25LV512
23/Bldg.
JESD22-A114A
J-STD-020A
ST10
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charmilles d10
Abstract: ck24 F14 84 b12108
Text: Edge6420 Per-Pin Electronics Companion DAC HIGH-PERFORMANCE PRODUCTS – ATE Description Features 64 Total DACs/Package Including: • Wide Voltage Output Range 17V Range ; Useful for Supervoltage • 44 Voltage DACs / Package • 20 Current DACs / Package
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Edge6420
13x13mm
Edge6420
0000V
charmilles d10
ck24
F14 84
b12108
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2A1144
Abstract: F114F C21DC
Text: Edge6420 Per-Pin Electronics Companion DAC PRELIMINARY HIGH-PERFORMANCE PRODUCTS – ATE Description Features 64 Total DACs/Package Including: • Wide Voltage Output Range 17V Range ; Useful for Supervoltage • 44 Voltage DACs / Package • 20 Current DACs / Package
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Edge6420
Edge6420
E6420ATF,
E6420BTF
2A1144
F114F
C21DC
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EHT COIL
Abstract: 16F NEC AUTOMATIC BEAM CURRENT LIMITER CIRCUITS electron gun CRT 3315C EHT COIL crt anode current DDP3315C ITU-R709 capacitor 1C9 TRANSISTOR BC 187
Text: ADVANCE INFORMATION MICRONAS Edition Dec. 5, 2001 6251-521-1AI DDP 3315C Display and Deflection Processor MICRONAS DDP 3315C ADVANCE INFORMATION Contents Page Section Title 4 5 5 1. 1.1. 1.2. Introduction System Architecture System Application 6 6 6 6 8 8
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6251-521-1AI
3315C
EHT COIL
16F NEC
AUTOMATIC BEAM CURRENT LIMITER CIRCUITS
electron gun CRT
3315C
EHT COIL crt anode current
DDP3315C
ITU-R709
capacitor 1C9
TRANSISTOR BC 187
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ca0005
Abstract: 800T-N YA3450N CA0015 lm 78 H 12 k
Text: ndex 58FCP . . 173 AR0001 . .85 AR0004 . .85
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58FCP
AR0001
AR0004
ca0005
800T-N
YA3450N
CA0015
lm 78 H 12 k
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EF90
Abstract: ef806 NMO150U FB35T NMO27C BSA150C
Text: Replacement Whips AROOOl . . W KG 3E B25 AR0004 . . W KG 3E 825 B S A 1 1 8 B . . W 640 B BSA 132 B . . . W 540 B B S A 1 5 0 B . . W 490 B
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AR0004
EF90
ef806
NMO150U
FB35T
NMO27C
BSA150C
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ADV7122JN80
Abstract: ADV7122KN80 AN8140K CXD2308Q
Text: - 292 • f c '- r ' t f f t j l O £ s & ADV7122JN80, 50 ADV7122KN80, 50 AN8140K U PC654 CXD2308Q ADV7150KS170/135/110/85 > - il Analog Devices Analog D evices tö T S ? H V —- ANALOG DEVICES il - ® ® TFS TFS + 2 5 'C TFS 25"C TFS S ^ S E S I i ' - t-
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ADV7122JN80,
ADV7122KN80,
50MSPS
AN8140K
50MSPS
UPC654
CXD2308Q
ADV7150KS170/135/110/85
170M/135M/110M/85MSPS
ADV7122JN80
ADV7122KN80
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hp 502 cold transistor
Abstract: 1H4 tube pc-9801 iw 1688 NL128102AC31-01 3460G
Text: DOD-H-6024 l/3g NEC T F T Type C O L O R . No . L O O M O D U L E N L 1 2 S 1 0 2 A G 3 1 — O 1 5 1 c m C2 O 1 Type . S X G A A n a 1 o s . F u i 1 — c o 1 ox* First editiOQ DATA SHEET Al 1 information io this docunent are subject to change without prior notice.
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DOD-H-6024
NL1281
hp 502 cold transistor
1H4 tube
pc-9801
iw 1688
NL128102AC31-01
3460G
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Untitled
Abstract: No abstract text available
Text: HD49815TF Digital Camera Signal Processor HITACHI ADE-207-316 Z 1st Edition Sep. 1999 Description The HD49815TF is a CMOS IC that has been developed as a digital signal-processing IC for CCD-camera digital-signal-processing systems. Functions • CCD-sensor drive-pulse generation (TG)
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HD49815TF
ADE-207-316
HD49815TF
TFP-120
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TFK 526
Abstract: msc 5511 d17010gf sol 4011 be pd1701 ptv 1444 IJ40 AF53 ti77
Text: 7 s— % • V — h S / Ë M o s ü s s m is M O S In te g ra te d C ircuit ft P ^ IW H F M , D 1 MWg PLLÜ >$§& v > ir y ° 'J v > ^ V l/5 1 'y ~ f • v < ^ p 7 1 G F - 1 1 < if, IF *^> £l*3lÌ z i > H P D17010G F-011 té, EWflOTFM, MW, L W A ''S ff P Ïffë & P L L Ü të S fcv
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D17010G
F-011
TFK 526
msc 5511
d17010gf
sol 4011 be
pd1701
ptv 1444
IJ40
AF53
ti77
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tb1227bn
Abstract: T-1227 3C80 philips TB1227BW lfh 1001
Text: TO SH IBA TENTATIVE TB1227BN TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TR mmr 1m 3 3 7m R mmr N m 'm • VIDEO, CHROMA AND SYNCHRONIZING SIGNALS PROCESSING IC FOR PAL/NTSC/SECAM SYSTEM COLOR TV TB1227BN that is a signal processing IC for the PAL/NTSC
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TB1227BN
TB1227BN
56pin
1227BN
50/60Hz
43MHz,
58MHz
T-1227
3C80 philips
TB1227BW
lfh 1001
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information applikation
Abstract: DL193D information applikation mikroelektronik Mikroelektronik Information Applikation mikroelektronik Heft 12 "Mikroelektronik" Heft mikroelektronik applikation VEB mikroelektronik applikation heft DL192D
Text: [ H n in k ^ t M E le l- c f a n a n il- c Information Applikatiùn Auf ein Wort: Werte Nutzer dieser Applikations-Hefte! Das Tempo der Entwicklung in der Mikroelektronik erfordert, ständig neue Informationen über Bauelemente und ihre mögliche Anwendung
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A109d
Abstract: Halbleiterbauelemente DDR VEB mikroelektronik mikroelektronik DDR a211d B109D "halbleiterwerk frankfurt" VEB Kombinat zf filter VEB Kombinat halbleiterwerk
Text: Halbleiter-Bauelemente Semiconductors 1981 D ie vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn daten der in der D D R gefertigten H albleiterbauelem ente. Dem Anw ender soll durch diese Übersicht die Auswahl d er jew eils in Frage kommenden
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