Untitled
Abstract: No abstract text available
Text: KEMET Part Number: T495X226M035ZGE2607280 B45198R6226M506 Capacitor, tantalum, 22 uF, 7343, +/-20% Tol, 35V@85C General Information + Bottom View Top View Pola rity Manufacturer: F Ind ic a tor Kem et m a y c onstruc t a term ina l slot on the p ositive sid e a t
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T495X226M035ZGE2607280
B45198R6226M506)
8819e74f-1af2-4b23-abad-d1465f14b2df
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PME271M522
Abstract: 43PN3100 R49AR3680 R46KN4100 PME271M610M R49AW PME271Y433
Text: Film Capacitors AC Line EMI Suppression and RC Networks Film Through-Hole One world. One KEMET. Film Capacitors AC Line EMI Suppression and RC Networks Table of Contents Page Why Choose KEMET. 4
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FC101
15bis
PME271M522
43PN3100
R49AR3680
R46KN4100
PME271M610M
R49AW
PME271Y433
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kemet f 881
Abstract: F881KF102
Text: EMI Suppressors Metallized Polypropylene F881 EMI Capacitors Class Y2, 300VAC Construction Metallized polypropylene film encapsulated with selfextinguishing resin in a box of material recognized to UL 94 V–0. Benefits • • • • • • • • •
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300VAC
50/60Hz
2500VAC
appl-1279-757201
F3005-1
kemet f 881
F881KF102
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F881KH222M300
Abstract: F881BO473 F881KF102 F881BZ823 F881 F881BB103M300 F881AP682 F881BB682 Kemet CAPACITOR DATE CODE MARKING ON PACKING F881A
Text: EMI Suppressors Metallized Polypropylene F881 EMI Capacitors Class Y2, 300VAC Construction Metallized polypropylene film encapsulated with self-extinguishing resin in a box of material recognized to UL 94 V–0. Benefits • • • • • • • • •
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300VAC
50/60Hz
2500VAC
F881KH222M300
F881BO473
F881KF102
F881BZ823
F881
F881BB103M300
F881AP682
F881BB682
Kemet CAPACITOR DATE CODE MARKING ON PACKING
F881A
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F881
Abstract: No abstract text available
Text: EMI Suppressors Metallized Polypropylene F881 EMI Capacitors Class Y2, 300VAC Construction Metallized polypropylene film encapsulated with self-extinguishing resin in a box of material recognized to UL 94 V–0. Benefits • • • • • • • • •
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300VAC
50/60Hz
2500VAC
F881
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F881
Abstract: No abstract text available
Text: AC Line EMI Suppression and RC Networks F881 Series Metallized Polypropylene Film, Class Y2, 300 VAC Overview Applications The F881 Series is constructed of metallized polypropylene film encapsulated with self-extinguishing resin in a box of material meeting the requirements of UL 94 V–0.
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F881
Abstract: No abstract text available
Text: AC Line EMI Suppression and RC Networks F881 Series Metallized Polypropylene Film, Class Y2, 300 VAC Overview Applications The F881 Series is constructed of metallized polypropylene film encapsulated with self-extinguishing resin in a box of material meeting the requirements of UL 94 V–0.
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F881
Abstract: No abstract text available
Text: AC Line EMI Suppression and RC Networks F881 Series Metallized Polypropylene Film, Class Y2, 300 VAC Overview Applications The F881 Series is constructed of metallized polypropylene film encapsulated with self-extinguishing resin in a box of material meeting the requirements of UL 94 V–0.
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60068to
F881
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F881BP473
Abstract: F881DH104 F881
Text: AC Line EMI Suppression and RC Networks F881 Series Metallized Polypropylene Film, Class Y2, 300 VAC Overview Applications The F881 Series is constructed of metallized polypropylene film encapsulated with self-extinguishing resin in a box of material meeting the requirements of UL 94 V–0.
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F881FY105
Abstract: F881
Text: AC Line EMI Suppression and RC Networks F881 Series Metallized Polypropylene Film, Class Y2, 300 VAC Overview Applications The F881 Series is constructed of metallized polypropylene film encapsulated with self-extinguishing resin in a box of material meeting the requirements of UL 94 V–0.
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F881
Abstract: No abstract text available
Text: AC Line EMI Suppression and RC Networks F881 Series Metallized Polypropylene Film, Class Y2, 300 VAC Overview Applications Metallized polypropylene film encapsulated with self-extinguishing resin in a box of material recognized to UL 94 V–0. For worldwide use as electromagnetic interference suppressor in
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F881
Abstract: No abstract text available
Text: Polypropylene Metallized Film EMI Suppression Capacitors F881 Series, Class Y2, 300 VAC Overview Applications Metallized polypropylene film encapsulated with self-extinguishing resin in a box of material recognized to UL 94 V–0. For worldwide use as electromagnetic interference suppressor in
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F881
Abstract: No abstract text available
Text: AC Line EMI Suppression and RC Networks F881 Series Metallized Polypropylene Film, Class Y2, 300 VAC Overview Applications The F881 Series is constructed of metallized polypropylene film encapsulated with self-extinguishing resin in a box of material meeting the requirements of UL 94 V–0.
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F881
Abstract: No abstract text available
Text: Actively sampling now. UL production to begin Fall 2012. AC Line EMI Suppression and RC Networks F881 Series Metallized Polypropylene Film, Class Y2, 300 VAC Overview Applications The F881 Series is constructed of metallized polypropylene film encapsulated with self-extinguishing resin in a box of material
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TUI-lf-9
Abstract: ATC700B392JT50X
Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched
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MMRF1016H
MMRF1016HR5
7/2014Semiconductor,
TUI-lf-9
ATC700B392JT50X
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Untitled
Abstract: No abstract text available
Text: KEMET Part Number: T350F226M016AT Capacitor, tantalum, 22 uF, +/-20% Tol, 16V@85C, Lead Spacing=2.54 mm General Information Manufacturer: KEMET Electrical Specifications Value: 16V Voltage DC @ 125C: 10V Tolerance: Body Type: Temperature Range: Application:
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T350F226M016AT
881d8bb9-b61c-4d08-8c5a-3b6ae12d92e4
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G2225X7R225KT3AB
Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.
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MRF6VP2600H
MRF6VP2600HR6
G2225X7R225KT3AB
MRF6VP2600KH
TUI-lf-9
UT-141C-25
DVB-T Schematic
tuo-4
MRF6VP2600H
AN1955
ATC100B470JT500XT
MRF6VP2600HR6
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.
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MRF6VP2600H
MRF6VP2600HR6
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MRF6VP2600KH
Abstract: TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.
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MRF6VP2600H
20ficers,
MRF6VP2600HR6
MRF6VP2600KH
TUI-lf-9
MRF6VP2600H
ATC700B392JT50X
ATC100B221
transistor j380
88-108
88-108 rf amplifier
UT-141C-25
5093nw
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TV booster diagram
Abstract: mhw* 820-1 DATASHEET pcb assembly 85501 application circuits of ic 74121 MHW6342TN motorola 18310 MHL9236MN DL210 010485 GP 809 DIODE
Text: RF Linear Amplifiers Freescale Semiconductor Device Data DL210 Rev. 3 3/2007 RF Product Portfolio freescale.com/rf Freescale Semiconductor offers RF Solutions a broad portfolio of RF products that utilize technologies such as LDMOS, GaAs, SiGe:C, RF CMOS
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DL210
TV booster diagram
mhw* 820-1 DATASHEET
pcb assembly 85501
application circuits of ic 74121
MHW6342TN
motorola 18310
MHL9236MN
DL210
010485
GP 809 DIODE
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transistor 6c x
Abstract: MRF9060 MRF9060 equivalent MOTOROLA transistor 413 BC857 LP2951 MRF9060S MRF9060SR1
Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs
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MRF9060
MRF9060S
MRF9060Sal
MRF9060
MRF9060S
MRF9060SR1
RDMRF9060NCDMA
transistor 6c x
MRF9060 equivalent
MOTOROLA transistor 413
BC857
LP2951
MRF9060SR1
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MRF9060l equivalent
Abstract: MRF9060 equivalent MRF9060L
Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 2, 12/2005 RF Reference Design Library RF Power Field Effect Transistors MRF9060LR1 MRF9060LSR1 Narrowband CDMA
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MRF9060LR1
MRF9060LSR1
MRF9060l equivalent
MRF9060 equivalent
MRF9060L
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications
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MRF6S9130H
MRF6S9130HR3
MRF6S9130HSR3
MRF6S9130H
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UT-85-M17
Abstract: 150 watts power amplifier layout bd136 equivalent transistor bd136
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800-970 MHz.
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Lon81
MRF897R
UT-85-M17
150 watts power amplifier layout
bd136 equivalent
transistor bd136
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