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Abstract: No abstract text available
Text: SEMICONDUCTOR KDV301E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. Low Series Resistance : rs=1.1 Max. Small Package : ESC. E C 1 A High Capacitance Ratio : C2V/C25V=14.5(Min.) B CATHODE MARK FEATURES 2 D F MAXIMUM RATING (Ta=25
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KDV301E
C2V/C25V
C2V/C25V
470MHz
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KDV301E
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV301E MARKING SPECIFICATION ESC PACKAGE 1. Marking method Laser Marking 2. Marking VQ No. 2005. 6. 1 Item Marking Description Device Mark VQ KDV301E Revision No : 0 1/1
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KDV301E
KDV301E
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KDV301E
Abstract: C25V
Text: SEMICONDUCTOR KDV301E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. Low Series Resistance : rs=1.1 Max. Small Package : ESC. E C 1 A High Capacitance Ratio : C2V/C25V=14.5(Min.) B CATHODE MARK FEATURES 2 D MAXIMUM RATING (Ta=25
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KDV301E
C2V/C25V
C2V/C25V
470MHz
KDV301E
C25V
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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