Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV214VA TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES CATHODE MARK ・High Capacitance Ratio : C2V/C25V=6.3 Min. ・Low Series Resistance : rS=0.57Ω(Max.) C D 1 2 ・Excellent C-V Characteristics, and Small Tracking Error.
|
Original
|
C2V/C25V
KDV214VA
470MHz
|
PDF
|
MARKING V2
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV214VA MARKING SPECIFICATION VSC PACKAGE 1. Marking method Laser Marking 2. Marking V2 No. 2005. 4. 8 Item Marking Dvscription Device Mark V2 KDV214VA Revision No : 0 1/1
|
Original
|
KDV214VA
MARKING V2
|
PDF
|
C25V
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV214VA TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES CATHODE MARK High Capacitance Ratio : C2V/C25V=6.3 Min. Low Series Resistance : rS=0.57 (Max.) C D 1 2 Excellent C-V Characteristics, and Small Tracking Error.
|
Original
|
KDV214VA
C2V/C25V
470MHz
C25V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR KDV214VA TE CHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE s TV TUNING. FEATURES CATHODEMARK • High Capacitance Ratio : C2V/C25V=6.3 Min. • Low Series Resistance : rs=0.57Q(Max.) • Excellent C-V Characteristics, and Small Tracking Error.
|
OCR Scan
|
C2V/C25V
KDV214VA
470MHz
|
PDF
|