KDS165T
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS165T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage. E Fast Reverse Recovery Time. B Small Total Capacitance. 1 DIM MILLIMETERS _ 0.2 A 2.9 + 4 B 1.6+0.2/-0.1 _ 0.05 0.70 +
|
Original
|
KDS165T
KDS165T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS165T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2005. 6. 21 Revision No : 0 1/2
|
Original
|
KDS165T
|
PDF
|
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S EM IC O N D U C T O R KDS165T TECHNI CAL DATA SI LI CON EPI TAXI AL PLANAR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • L ow Forw ard V oltage. • Fast R everse R ecovery T im e. • Sm all T otal C apacitance. DIM A 2.9± 0.2 n B
|
OCR Scan
|
KDS165T
|
PDF
|