KDS 7C Search Results

Oscillator KDS DOC

Abstract: kds 6 mhz crystal oscillator kds 4h KDS DOC KDS oscillator quartz kds KDS DOC-20NA KDS 12 MHZ crystal oscillator KDS 6 MHZ crystal kds6mhzcrystaloscillator
Contextual Info: m OSCILLATORS: Selection Guide KDS Crystal Oscillators KDS Oscillator products include hybrid oscillators that provide a full range of per­ formance options. KDS hybrid clock oscillators combine stateof-the-art technology im plem enting our precision quartz crystal resonatorstoachieve

xo 405 mf

Abstract: SM 8002C staa9fc SG-615PH C nct040c saronix nch060c hosonic crystal cross reference saronix NTH069C Siward crystal xtal Saronix STAA9FC
Contextual Info: GENERAL COMPETITOR CROSS REFERENCE Manufacturer Part Number Abracon Abracon Abracon Abracon Abracon Abracon Bliley Champion Champion Champion Champion Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen

KDS 9E

Abstract: l0225 C67078-A1307-A3 KDS 7B KDS 1M ksd 202 transistor buz 36 KDS 7c C67078-S1302-A2 transistor buz 293
Contextual Info: V^ll~ IVIV^vJ D l 17 on £ m \J a ir ia i* T rD WVVCI M C IM O I9 1 V I UUC. 9 ini c n a n n e i • Enhancement mode VPT05381 Type VDS Id BUZ 20 100 V 13,5 A •^DS on 0,2 Q Package 1> Ordering Code TO-220 AB C67078-S1302-A2 M a v jm n m P a tjn g e Parameter

CFY75

Abstract: cfy 75 cfy 14 siemens HEMT marking P FMI 591 cfy siemens CFY 19
Contextual Info: SIEMENS CFY 75 AIGaAs/GaAs HEMT • Very low noise • Very high gain • For low-noise front end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

BF961

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF961 • For input and mixer stages in FM and VHF TV tuners Type Marking Ordering Code BF 961 - Q62702-F518 Pin Configuration 2 1 3 4 S D Gz Package1 Gì X-plast Maximum Ratings Parameter Symbol Values Unit Drain-source voltage

2SK54

Contextual Info: 2SK54î'U a V N * * ^ ^ S M F E T S IL IC O N N - C H A N N E L J U N C T I O N F E T VH F A M S * « , V H F A M P L IF IE R , MIXER ïS*ê*ffi 20 1. Y - h ! Gate 2. y — X ; Source 3. K u- 4 > : Drain Di mensions in mm (JE D E C TO-92) A B S O L U T E M A X IM U M R A T I N G S (7*0=2513 )

transistor SMD 1p4

Abstract: KDS IR Sensor 4 MHZ KDS 6b transistor smd 4ss 410F2 C67078-A5007-A9 siemens nox sensor siemens bts 130 BTS 432 D2 E3043 BTS121A
Contextual Info: x | P j y j E M C •r / i n r c T im r r c i “ b t c d io • Enhancement mode T "« i w«« + i 1 »*/¡+l^ /^k n r / - \ v\ /•* v Tem I ci I ip perature c i cuui c dei sensor lövji w in I u iy iid iu i 0 1 icii a u ic i iouo • The drain pin is eiectricaNy shorted to the tab

Contextual Info: H I TA .rh l / -C OP T Ö E L E C T R O N I C S } 73C D BM H ibriUb UUCmüU i 2SK 1960 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES • High Speed Sw itching. • High Cutoff Frequency. • E nh ancem ent-M ode.

2SJ120

Abstract: 2SK416 2SJ120S 2SK416L C3S30
Contextual Info: 2S K 416 L ,2S K 416 s y U =1> N 9 V * JUMOS FET_ SILICON N-CHANNEL MOS FET *»*• «* y f >9 ñ 2SJ120 L ,2SJ120 § t =1> HIGH SPEED POW ER SWITCHING Complementary pair with 2SJ120 , 2SJ120S * > £ V T=P (DType 1. 2. Y — h ! G ate Y V -{ y \ D rain

siemens gaas fet

Abstract: E7916 pinFET marking c6 cerec
Contextual Info: SIEMENS GaAs FET CFY 25-20 E7916 Preliminary Data • • • • • Low noise High gain Low gate-leakage current All gold metallization For high-speed fibre optic receivers and PIN-FET modules up to 2.4 Gbit/sec VC E05255 ESD: Electrostatic discharge sensitive device, observe handling precautions!

2SK399

Abstract: 2SJ113 44TB2 diode lo2a GG13 J-10 Hitachi Scans-001
Contextual Info: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.

2SK399

Abstract: 2SJ113 J-10
Contextual Info: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 53 A • N channel • Enhancement mode Type BUZ 53 A 1000 V /d Ä|js on Package 1> Ordering Code 2.5 A 5.0 n TO-204 AA C67078-A1009-A3 Maximum Ratings Parameter Symbol Continuous drain current r c = 25 'C íí 2.5 Pulsed drain current, Tc = 25 'C

2SK683

Abstract: 2SK682 2SK68 DIODE 720
Contextual Info: blE D 44^b20S 00131E1 L3L IHITM 2SK682,2SK683 SILICO N N -C H A N N E L MOS FET HIGH SPEED POWER SWITCHING • FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown Suitable for Switching Regulator, DC-DC Converter

BSM254F

Abstract: BSM254
Contextual Info: SIEMENS SIMOPAC Module VDS Io R BSM 254 F = 500 V = 2 x 35 A D S on = 0 . 1 7 LI • Power module • Half-bridge • FREDFET • N channel • Enhancement mode • Package with insulated metal base plate • Package outline/Circuit diagram: 2a1) T y p e _

Contextual Info: SIEMENS SIMOPAC Module BSM 151 VDS = 500 V I D =48 A R DS on = 0.12 Q • • • • • • Power module Single switch N channel Enhancem ent mode Package with insulated metal base plate Package outline/C ircuit diagram : 11) Type O rdering Code BSM 151

2SK554

Abstract: 2SK555 7V25 DIODE T25 4 Jo Hitachi Scans-001
Contextual Info: IHIT 4 hlE D 2SK554,2SK555 HITACHI/COPTOELEC TRO NICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance. • High Speed Switching. • Low Drive Current. • No Secondary Breakdown. • Suitable for Switching Regulator,

Contextual Info: SIEMENS Silicon N Channel MOSFET Tetrode BF 964 S • For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners Type Marking Ordering Code BF 964 S - Q62702-F446 Pin Configuration 1 2 3 4 S D Gz Package1 Gì

BSM141

Contextual Info: SIEMENS S IM O P A C M o d u le B S M V DS = 400 V / o = 60 A DS on = 0.075 • Power module • Single switch • N channel • Enhancement mode • Package with insulated metal base plate • Package outline/Circuit diagram: 11) Type Ordering Code BSM 141

Contextual Info: ÖE35b05 OOfllBOñ bñT SIEMENS HITFET BTS 149 Smart Lowside Power Switch Features Product Summary • • • • • • • • • Continious drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level Input

Contextual Info: SIEMENS SIPMOS Power Transistors • • • BUZ 76 BUZ 76 A N channel Enhancement mode Avalanche-rated Type ^DS Id ^DS on Package 1> O rdering Code BUZ 76 400 V 3.0 A 37 "C 1.8 Q TO -220 AB C 67078-S 1315-A2 BUZ 76 A 400 V 2.7 A 23 ”C 2.5 n TO -220 AB

BUZ211

Abstract: UZ210 kds 210
Contextual Info: SIEMENS SIPMOS Power Transistors • • • N channel Enhancement mode FREDFET Type V DS BUZ 210 500 V 10.5 A 0.6 Í2 BUZ 211 500 V 9.0 A 0.8 U ^DS on Maxim um Ratings Parameter Continuous drain current, Tc = 25 ‘ C Pulsed drain current, Tc = 25 "C

Contextual Info: SIEMENS BUZ 11 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 11 Vds 50 V ^DS on 0.04 ß hi 30 A Package Ordering Code TO-220 AB C67078-S1301-A2 Maximum Ratings Parameter Symbol Continuous drain current

8070N

Contextual Info: SIEMENS SIPMOS Power Transistors • • • N channel Enhancement mode Avalanche-rated Type Vos Io BUZ 16 50 V 48 A 0.018 Q BUZ 16 S2 60 V 48 A ¡0 .0 1 8 Q R D S o n M axim um Ratings Param eter Continuous drain current , T C = 19 'C Pulsed drain current, Tc = 2 5 ‘ C