Untitled
Abstract: No abstract text available
Text: International IÖR Rectifier PD - 91688 IRG4PSH71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins
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IRG4PSH71
O-247
O-264,
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Untitled
Abstract: No abstract text available
Text: International IÖR Rectifier PD - 91684 IRG4PSC71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins
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IRG4PSC71
O-247
O-264,
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D-42
Abstract: KD221275A7 reverse forward control diagram KD221K75 kd221275a kd2212
Text: mmn sK KD 221275A 7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DUcil DdfHnCjtOn T ran sis to r M o d u le 75 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD221275A7
Amperes/1200
D-42
KD221275A7
reverse forward control diagram
KD221K75
kd221275a
kd2212
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AN80T07
Abstract: ic901 KD-SC900R AN80T sc900r audio output TRANSISTOR NPN
Text: KD-SC900R 4.2 AN80T07 IC901 : Regulator • Block diagram MODE1 ACC NC 6 3 5 *ASO, Peak Current Protection. *Thermal Protection (Except VDD, Comp output). Outputs Reference Voltage Pre Drive Pre Drive Pre Drive EXT Out Pre Drive ANT Out 15 14 ILM 10V 11
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Original
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KD-SC900R
AN80T07
IC901)
100mA
1200mA
300mA
300mA)
500mA
AN80T07
ic901
KD-SC900R
AN80T
sc900r
audio output TRANSISTOR NPN
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PDF
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955 100 12 LAO
Abstract: MPS6571 MPS-6571
Text: MPS6571 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON AMPLIFIER TRANSISTOR . designed for pream plifiers in a u d io am plifier applications. • C olle cto r-E m itte r B re a kd ow n V oltage - • L o w N o ise Figure — N F = 1.2 d B (T yp) @ le = 1 00 ß A d c
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MPS6571
955 100 12 LAO
MPS6571
MPS-6571
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2T31
Abstract: No abstract text available
Text: r - 3 3 - Z ^ f P ow er Transistors BUX37 HARRI S File N um ber SEMI COND SECTOR S7E D B M3 Q2 2 7 1 QQE0 2 5 4 M »HAS 15-Ampere N-P-N Monolithic Darlington Power Transistor TERMINAL DESIGNATIONS 400 V , 35 W Gain of 20 at 15A F ea tu res: • H ig h vo ltag e b re a kd o w n
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BUX37
15-Ampere
O-204AA
GQ2Q25b
2T31
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2SC3873
Abstract: No abstract text available
Text: Power Transistors 2SG3873 2S C 3873 Silicon PNP Triple-Diffused Planar Type P a c k a g e D im e n s io n s H igh B re a kd o w n V o lta g e , H igh S p e e d S w itch in g Unit ' mm • F e a tu re s 5.2max. 15.5max 6.9min • High speed switching 3.2 • High collector-base voltage V cbo
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2SC-3873
2SC3873
bi3ea52
2SC3873
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DG37MS
Abstract: CD40488 15-V CD4048B DG37
Text: HARRIS SEMICOND 44E D SECTOR H I 4 3 Q 2 2 7 1 QQ3745fe. 2 « ¡ H A S r-V3'Z/ HARRIS CD4048B Types C M O S Multifunction Expandable 8-Input Gate BINARY CONTROL INPUTS 'FONCTION co ntr ol 3-STATE * x b *t Kd , CONTROL I I I r H igh-Voltage Types 2 0 -V o lt Rating
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20-Volt
43G2271
QQ374Sfei
CD4048B
CD40488
S2C3-31671
92CS-22265
92CS-31669
92CS-3I6T4
DG37MS
15-V
DG37
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BC461
Abstract: JCASE BC441
Text: BC 394 THERMAL DATA The rm a l resistance ¡u n ctio n -ca se The rm a l resistance ju n c tio n -a m b ie n t V BR CBO C o lle cto r-b a se b re a kd o w n voltage 0e =0) l c = 100 V CEO (sus)* C o lle c to r-e m itte r sustaining voltage Ob = 0 ) V(BR)EBO E m itte r-b a se
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KD221203A7
Abstract: KD524505 KD221404 KD225575 KD321408 kd424520 KD721KA1 kd2212 KD7245A1 kd221
Text: D 0 111E R E X t>4E J> INC rnmenex m 72T4L21 0 0 0 b 5 4 ci D b4 * P R X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 DARLINGTON TRANSISTOR MODULES (Continued)
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72T4L21
BP107,
KD7245A1
KD721KA1
KD7212A1
KD221203A7
KD524505
KD221404
KD225575
KD321408
kd424520
kd2212
kd221
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pwm INVERTER welder
Abstract: KD224510 250A darlington transistor Kd224515 powerex snubber capacitor inverter welder circuit kd2245 kd224510 application note KD221K75 transistor
Text: W U IfB tE K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Darlington Transistor Modules Application Information 2.7 Reverse Transistor Action and dv/dt Turn-on A problem that occurs with the half-bridge circuit configuration fed
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BCW30 SMALL SIGNAL PNP TRANSISTORS Type M arking B C W 30 C2 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO AMPLIFICATION AND
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BCW30
OT-23
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 BCP54 O FEATURES * S u ita b le fo r AF d riv e rs a nd o u tp u t stages * H igh c o lle c to r c u rre n t and L o w VCE sat| CO M PLEM ENTAR Y TYPE PARTM ARKING DETAILS - BCP51 BCP54
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OT223
BCP51
BCP54
BCP54
BCP54-10
BCP54-16
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ULN-2082A
Abstract: ULN-2081 ULN2081A
Text: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. 13 1 • Ü50433Ö S E M I C O N D S / ICS QQQ3ÔE1 ñ ■ AL6R 9 3 D 0 3 8 2 1 3> ULN-2081A AND ULN-2082A GENERAL-PURPOSE HIGH-CURRENT TRANSISTOR ARRAYS ULN-2081 A AND ULN -2082A GENERAL-PURPOSE HIGH-CURRENT TRANSISTOR ARRAYS
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ULN-2081A
ULN-2082A
ULN-2081
-2082A
ULN-2082A
ULN2081A
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[LiCTI3®[i!lDS$ BCP55/56 MEDIUM POWER AMPLIFIER AD VA N C E DATA . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL
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BCP55/56
BCP52
BCP53
OT-223
P008B
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[LiCTI3®[i!lDS$ BCP52/53 MEDIUM POWER AMPLIFIER AD VA N C E DATA . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL
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BCP52/53
BCP55
BCP56
OT-223
P008B
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1 - NOVEMBER 1998 FEATURES * 500 V o lt VCE0 * 150m A c o n tin u o u s c u rre n t * Ptot = 2 W a tt PARTM ARKING D E T A IL - X <VC FZT560 ABSOLUTE M AXIM UM RATINGS. PARAMETER VALUE UNIT VcBO
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OT223
FZT560
-100m
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Untitled
Abstract: No abstract text available
Text: rz7 Ä T# SGS-m0MS0N bcs57 r a o e œ iiL iie r a * ® BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING
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bcs57
BC858
BC857
BC847
OT-23
BC857/BC858
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BC847 SMALL SIGNAL NPN TRANSISTORS Type M arking B C 847B 1F . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL GENERAL PURPOSE . PNP COMPLEMENT IS BC857
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BC847
BC857
OT-23
OT-23
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cb 10 b 60 kd
Abstract: 2N4126
Text: TOSHIBA 2N4126 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqbo -50nA Max. @ Vqb _ -20V - I^bo = -50nA (Max.) @ V^g = -3V • Low Saturation Voltage - VQE(satj = -0.4V (Max.) @ lc = -50mA, lB = -5mA
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2N4126
-50nA
-50mA,
2N4124
cb 10 b 60 kd
2N4126
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Transistors K 903
Abstract: MPS3827 MPS3826
Text: MPS3826 SILICON MPS3827 NPN SILICON NPN SILICO N A N N U L A R TRANSISTORS A M PLIFIER TRANSISTORS . . designed fo r use in general-purpose am plifier applications. C ollector Em itter Breakdown Voltage — B V c E O = 45 Vdc (Min) @ lc = 10 mAdc High Current-Gain— Bandwidth Product —
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MPS3826
MPS3827
MPS3826
MPS3827
Transistors K 903
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2SK2610
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2610 SILICON N CHANNEL MOS TYPE /T-MOSIII DATA (2SK2610) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE
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2SK2610
2SK2610)
2SK2610
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Untitled
Abstract: No abstract text available
Text: PD - 91729 International I R Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10 as, VCc = 7 2 0 V , T j = 125°C,
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IRG4ZH71KD
SMD-10
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