KD TRANSISTOR Search Results

8XC196KC

Abstract: 8XC196KD ACH6 INT07 8XC196KC instructions ad478 transistor BL P44 8XC196KC/KD
Contextual Info: 8XC196KC/KD Signal Descriptions B APPENDIX B 8XC196KC/KD SIGNAL DESCRIPTIONS This appendix provides reference information for the pin functions of the 8XC196KC and 8XC196KD. Table B-l defines the columns used in Table B-2, which describes the pin functions. Table B-3 shows the reset status of I/O and control pins, and Table B-4 defines

Contextual Info: International IÖR Rectifier PD - 91688 IRG4PSH71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins

Contextual Info: International IÖR Rectifier PD - 91684 IRG4PSC71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins

NEM0899F06-30

Abstract: J294 J29-4
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0899F06-30 N-CHANNEL SILICON POWER MOSFET FOR UHF-TV TRANSMITTER POWER AMPLIFIER FEATURES PACKAGE DRAWING Unit: mm • High output, high gain, high efficiency Po = 100 W, GL = 12 dB, KD = 50 %

D-42

Abstract: KD221275A7 reverse forward control diagram KD221K75 kd221275a kd2212
Contextual Info: mmn sK KD 221275A 7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DUcil DdfHnCjtOn T ran sis to r M o d u le 75 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

sk3018

Abstract: SK3027/130 SK3083 SK3024 SK3004 SK3004/102A SK3012/105 sk3123 SK3115/165 SK3115
Contextual Info: THOMSON/ DISTRIBUTOR DTE D | =]GEbfl73 □QG33bl 3 | . T ' 2 1 -O l PERFORMANCE DATA 3ipolar Transistors LIM IT C O NDITIONS CH AR ACTER ISTIC S BR EA KD O W N V O LT A G E RCA Typ« Polarity and : Material Device Dissi­ pation Collector Current Contin­

12FL

Abstract: B350067
Contextual Info: , i - SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION DIMENSIONS MODEL P/N APPROVED NO APPROVED BY j DC BRUSHLESS BLOWER 35X35X7 mm GB0535ADB2-8 M AUTHORIZED . ¡. 89 2 2 1 DAWN 'pdaacf 12lt5 C H KD SPEC. NO. ISSUE DATE EDITION REVISE DATE E.SPEC B350067

12FL

Abstract: UL3265
Contextual Info: SUNON SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION DC BRUSHLESS BLOWER DIMENSIONS 35X35X6 mm M O D E L GB0535AEBI-8 P/N M APPROVED NO APPROVED BY AUTHORIZED DAWN. 'fyacÁM 3¡30 CH KD. SPEC. NO. ISSUE DATE EDITION REVISE DATE E.SPEC B350071 03.03.1999

AN80T07

Abstract: ic901 KD-SC900R AN80T sc900r audio output TRANSISTOR NPN
Contextual Info: KD-SC900R 4.2 AN80T07 IC901 : Regulator • Block diagram MODE1 ACC NC 6 3 5 *ASO, Peak Current Protection. *Thermal Protection (Except VDD, Comp output). Outputs Reference Voltage Pre Drive Pre Drive Pre Drive EXT Out Pre Drive ANT Out 15 14 ILM 10V 11

8XC196KC

Abstract: 8XC196KC instructions 8XC196KC instruction set 8XC196KC/KD
Contextual Info: Special Operating Modes 12 CHAPTER 12 SPECIAL OPERATING MODES The 8XC196KC/KD supports three special operating modes: Idle, Powerdown, and OnCircuit Emulation ONCE . Idle and Powerdown modes reduce power consumption; the OnCircuit Emulation (ONCE) mode is a test mode that electrically isolates the chip from the

AP-125

Abstract: 8XC196KC 8XC196KC chapter 5 interrupts 8XC196KC instruction set AD0-AD15 kd 116 transistor A0123-B0 8XC196KC/KD
Contextual Info: Minimum Hardware Considerations il CHAPTER 11 MINIMUM HARDWARE CONSIDERATIONS The 8XC196KC/KD has several basic requirements for operation within a system. It requires an external source of power, ground, the clock signal, and the RESET# signal. This chapter describes options for providing the basic requirements and describes other hardware

955 100 12 LAO

Abstract: MPS6571 MPS-6571
Contextual Info: MPS6571 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON AMPLIFIER TRANSISTOR . designed for pream plifiers in a u d io am plifier applications. • C olle cto r-E m itte r B re a kd ow n V oltage - • L o w N o ise Figure — N F = 1.2 d B (T yp) @ le = 1 00 ß A d c

2N2109

Abstract: 2N2110 2N2111 2N2112 2N2113 2N2114 2N2116 2N2117 2N2118 2N2119
Contextual Info: 8365700 SOLI» SOLID POWER POWER C O R P 95C CORP 00122 —Ol D » e | fl3bS?DD ODGDlSa fi § ~ POWER TRANSISTORS TYPE NO. TO-114 PT MAXIMUM RATINGS @ Ic 25°C BV cbo BV ceo BVebo A V V V Watts hFE MIN MAX <kD Ic VcE V A Test Sat Voltages Conditions V ce V be

2T31

Contextual Info: r - 3 3 - Z ^ f P ow er Transistors BUX37 HARRI S File N um ber SEMI COND SECTOR S7E D B M3 Q2 2 7 1 QQE0 2 5 4 M »HAS 15-Ampere N-P-N Monolithic Darlington Power Transistor TERMINAL DESIGNATIONS 400 V , 35 W Gain of 20 at 15A F ea tu res: • H ig h vo ltag e b re a kd o w n

2SC3873

Contextual Info: Power Transistors 2SG3873 2S C 3873 Silicon PNP Triple-Diffused Planar Type P a c k a g e D im e n s io n s H igh B re a kd o w n V o lta g e , H igh S p e e d S w itch in g Unit ' mm • F e a tu re s 5.2max. 15.5max 6.9min • High speed switching 3.2 • High collector-base voltage V cbo

DG37MS

Abstract: CD40488 15-V CD4048B DG37
Contextual Info: HARRIS SEMICOND 44E D SECTOR H I 4 3 Q 2 2 7 1 QQ3745fe. 2 « ¡ H A S r-V3'Z/ HARRIS CD4048B Types C M O S Multifunction Expandable 8-Input Gate BINARY CONTROL INPUTS 'FONCTION co ntr ol 3-STATE * x b *t Kd , CONTROL I I I r H igh-Voltage Types 2 0 -V o lt Rating

BC461

Abstract: JCASE BC441
Contextual Info: BC 394 THERMAL DATA The rm a l resistance ¡u n ctio n -ca se The rm a l resistance ju n c tio n -a m b ie n t V BR CBO C o lle cto r-b a se b re a kd o w n voltage 0e =0) l c = 100 V CEO (sus)* C o lle c to r-e m itte r sustaining voltage Ob = 0 ) V(BR)EBO E m itte r-b a se

KD221203A7

Abstract: KD524505 KD221404 KD225575 KD321408 kd424520 KD721KA1 kd2212 KD7245A1 kd221
Contextual Info: D 0 111E R E X t>4E J> INC rnmenex m 72T4L21 0 0 0 b 5 4 ci D b4 * P R X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 DARLINGTON TRANSISTOR MODULES (Continued)

KD221203A7

Abstract: KD524575 KD225575 KD524505 KD221K75 KD221205A7 KD221404 KD421415 KD7212A1 kd224575
Contextual Info: D 0 111E R E X I N C t>4E rnmenex J> m 72T4L21 0 0 0 b 5 4 ci D b 4 * P R X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 DARLINGTON TRANSISTOR MODULES (Continued)

pwm INVERTER welder

Abstract: KD224510 250A darlington transistor Kd224515 powerex snubber capacitor inverter welder circuit kd2245 kd224510 application note KD221K75 transistor
Contextual Info: W U IfB tE K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Darlington Transistor Modules Application Information 2.7 Reverse Transistor Action and dv/dt Turn-on A problem that occurs with the half-bridge circuit configuration fed

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

Contextual Info: PNP Silicon Planar Medium Power Transistors Z TX 554 ZTX 555 ZTX 556 ZX557 FEATURES • • • • • 1W p o w e r d issipation a t T amb = 2 5 ° C V oltages up to 3 0 0 V Excellent gain c h a ra cte ristics up to 3 0 0 m A L o w sa tu ra tio n voltages

ZTX690B

Contextual Info: NPN Silicon Planar Medium Power High Gain Transistors ZTX689B ZTX690B ZTX692B ZTX694B PRELIMINARY INFORMATION FEATURES • • • • • • High gain — 5 0 0 m in. Up to 3 a m p s co n tin u o u s cu rre n t Gain specified up to 6 amps 1 .5 w a tt p o w e r dissip a tio n at

Contextual Info: SIEMENS NPN Silicon High-Voltage Transistor BFN 22 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: BFN 23 PNP