marking KD SOT23
Abstract: KTK5134S
Text: SEMICONDUCTOR KTK5134S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 KD 1 2 Item Marking Description Device Mark KD KTK5134S * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KTK5134S
OT-23
marking KD SOT23
KTK5134S
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smd diode bd
Abstract: BKC Semiconductors DSAIH0002546
Text: SOT-23 Plastic SMD Applications Schottky Diode bd kd Excellent MOS protection. Efficient portable system battery isolator. Used in small fast motor applications such as CD ROMs and hard disk drives. SOT-23 PACKAGE OUTLINE Features • • • • • all dimensions in milimeters
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OT-23
DO-35
300pSecs
BAT43)
smd diode bd
BKC Semiconductors
DSAIH0002546
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ixtn15n100
Abstract: No abstract text available
Text: MegaMOS FET IXTN15N100 v ¥ dss ^D25 P DS on = 1000 V = 15 A = 0.6 Q N-Channel Enhancement Mode 6s Symbol Maximum Ratings Test Conditions V DSS Tj = 25°C to 150°C 1000 V vDGH Tj = 25°C to 150°C; RGS = 10 kD 1000 V vas Continuous ±20 V V GSM Transient
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IXTN15N100
OT-227
000E21D
ixtn15n100
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 BCP54 O FEATURES * S u ita b le fo r AF d riv e rs a nd o u tp u t stages * H igh c o lle c to r c u rre n t and L o w VCE sat| CO M PLEM ENTAR Y TYPE PARTM ARKING DETAILS - BCP51 BCP54
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OT223
BCP51
BCP54
BCP54
BCP54-10
BCP54-16
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KD transistor
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - SEPTEMBER 95 Q_ C O M PLIM E N TA R Y TYPE - BSS63 PAR TM ARKING DETAIL - BSS64 - BSS64 U3 BSS64R - U6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L C o lle c to r-B a s e V o lta g e
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BSS64
BSS63
BSS64
BSS64R
300us.
KD transistor
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1 - NOVEMBER 1998 FEATURES * 500 V o lt VCE0 * 150m A c o n tin u o u s c u rre n t * Ptot = 2 W a tt PARTM ARKING D E T A IL - X <VC FZT560 ABSOLUTE M AXIM UM RATINGS. PARAMETER VALUE UNIT VcBO
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OT223
FZT560
-100m
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LC-1
Abstract: SY SOT23
Text: "SuperSOT" SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 - APRIL 97 FEATURES * 625m W POWER DISSIPATION H ighest c u rre n t c a p a b ility SOT23 D a rlin g to n Very h igh hFE - sp e cifie d at 2A 5K m in im u m - ty p ic a lly 600 at 5A COM PLEM ENTARY TYPE - F M M T734
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300us.
FMMT634
LC-1
SY SOT23
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fzt591
Abstract: FZT491A FZT591A
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT591A ISSUE 1 - DECEMBER 2001 FEATURES L o w e q u iv a le n t on resistance RCE sat = 350m PART M ARKING DETAIL - FZT591A C O M PLEM ENTAR Y TYPE - FZT491A at 1A ABSOLUTE M A X IM U M RATINGS. PARAMETER
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OT223
FZT591A
FZT491A
-50mA*
-100mA*
-500mA*
-50mA,
100MHz
FZT591A
100mA
fzt591
FZT491A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 150 mWatts SOT-323 Unit: inch mm FEATURES • Collector-emitter voltage VCE = -40V .087(2.2) .070(1.8) • Collector current IC = -200mA • Both normal and Pb free product are available :
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MMBT3906W
OT-323
-200mA
OT-323,
MIL-STD-202,
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TESLA KU 602
Abstract: TESLA KU 601 tesla ku 611 kd 501 KD 3055 vergleichsliste DDR kd 616 tungsram UNITRA vergleichsliste
Text: r electronic Vergleichsliste Silizium-Leistungstransistoren 1 Vorwort» Die Verglcich8jiatc Silizium - Leistungstransistoren wurde in erste: Linie als Arbeitsmaterial fuer die Applikationsorgane unseres Kombinates zusanmengestellt. Um das Hauptziel dic.aer Liste - NSW - Bauelemente
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O-220
TESLA KU 602
TESLA KU 601
tesla ku 611
kd 501
KD 3055
vergleichsliste DDR
kd 616
tungsram
UNITRA
vergleichsliste
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Untitled
Abstract: No abstract text available
Text: SOT223 PIMP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1 - NOVEMBER 1998 FEATURES * 500 V o lt V,CEO 150m A c o n tin u o u s c u rre n t Ptot = 2 W a tt PARTM ARKING D E T A IL - FZT560 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL C o lle c to r-B a s e V o lta g e
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OT223
FZT560
-100m
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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k2915
Abstract: SOT-23 marking l31 sot143 code marking l30 sot143 marking code 2c marking code 3h diode JW sot23 L30 SOT143 HSMS2850 hsms-285x JW SOT-23
Text: What HEWLETT* m L liM PACKARD Surface Mount Microwave Schottin Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface Mount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/|jW at 915 MHz up to 35 mV/|jW at 2.45 GHz
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HSMS-2850
HSMS-2860
OT-23/
OT-143
OT-23
5966-0928E,
k2915
SOT-23 marking l31
sot143 code marking l30
sot143 marking code 2c
marking code 3h diode
JW sot23
L30 SOT143
HSMS2850
hsms-285x
JW SOT-23
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Untitled
Abstract: No abstract text available
Text: SOT23 SILICON DUAL VARIABLE CAPACITANCE DIODE ZDC833A ISSUE 2 - JANUARY 1998 FEATURES * VHF to UHF o p e ra tio n PIN CONFIGURATION 1 * C o m m o n C athode Dual D iode 2 * M o n o lith ic co n s tru c tio n _L _L APPLICATIO NS * M o b ile ra d io s and Pagers
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C833A
ZDC833A
V/20V,
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BCW30 SMALL SIGNAL PNP TRANSISTORS Type M arking B C W 30 C2 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO AMPLIFICATION AND
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BCW30
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[LiCTI3®[i!lDS$ BCP55/56 MEDIUM POWER AMPLIFIER AD VA N C E DATA . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL
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BCP55/56
BCP52
BCP53
OT-223
P008B
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[LiCTI3®[i!lDS$ BCP52/53 MEDIUM POWER AMPLIFIER AD VA N C E DATA . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL
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BCP52/53
BCP55
BCP56
OT-223
P008B
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KD 617
Abstract: SMS3991-30 SMS1528-50 SMS1527-50 SMS1526-30 SMS1526-10 SMS3991-10 SMS3991
Text: Receiving Diodes w RF and Switch Applications 3 JM" SOT 23_ SOT 143 Reverse Current nA max @ VF Vdc (max) @ vB @ 10 (iA Vdc (min) 1 mA 10 mA SMS1526-50 70 0.55 — SMS1526-30 20 0.40 — SMS1526-10 8 0.34 0.45 SMS1527-50 70 0.55 — SMS1527-30
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SMS1526-50
SMS1526-30
SMS1526-10
SMS1527-50
SMS1527-30
SMS1527-10
SMS1528-50
SMS1530-50
SMS1532-00
KD 617
SMS3991-30
SMS3991-10
SMS3991
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Untitled
Abstract: No abstract text available
Text: rz7 Ä T# SGS-m0MS0N bcs57 r a o e œ iiL iie r a * ® BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING
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bcs57
BC858
BC857
BC847
OT-23
BC857/BC858
OT-23
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BC847 SMALL SIGNAL NPN TRANSISTORS Type M arking B C 847B 1F . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL GENERAL PURPOSE . PNP COMPLEMENT IS BC857
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BC847
BC857
OT-23
OT-23
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AW74
Abstract: No abstract text available
Text: SOT23 HIGH SPEED SWITCHING DIODE PAIR COMMON ANODE ISSUE 3 - JULY 1998 PIN CONFIGU RATIO N 1 A PARTM ARKING DETAILS B A W 74 - W 74 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL C o n tin u o u s Reverse V o lta g e VR A v e ra g e O u tp u t R e c tifie d C u rre n t
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BAV74
AW74
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NTK3139P
Abstract: NTK3139PT5G NTK3139PT1G
Text: NTK3139P Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 Features • • • • • http://onsemi.com P−channel Switch with Low RDS on 44% Smaller Footprint and 38% Thinner than SC−89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating
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NTK3139P
OT-723
SC-89
NTK3139P/D
NTK3139P
NTK3139PT5G
NTK3139PT1G
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at125
Abstract: V103 delay circuit KD SOT SOT89 KD AT120
Text: AT120/AT125 Micro-Power Voltage Detector, Delay Circuit Built-In Immense Advance Tech. FEATURES DESCRIPTION Highly Accuracy：±2% The AT120/AT125 series are highly accurate and Low Power Consumption：1.0 A TYP. at ultra low power consumption voltage detectors. It
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AT120/AT125
AT120/AT125
100ppm/
OT-25,
OT-343,
OT-89
at125
V103
delay circuit
KD SOT
SOT89 KD
AT120
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON [MSIfiiSilLiSìlKìtÉfflOSS STZT5401 MEDIUM POWER AMPLIFIER ADVANCE DATA . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL
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STZT5401
OT-223
P008B
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