KD PNP Search Results

KD PNP Result Highlights (5)

Part	Manufacturer	Description
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N
TTA2070	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini

KD PNP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
sk3018 Abstract: SK3027/130 SK3083 SK3024 SK3004 SK3004/102A SK3012/105 sk3123 SK3115/165 SK3115 Text: THOMSON/ DISTRIBUTOR DTE D \| =]GEbfl73 □QG33bl 3 \| . T ' 2 1 -O l PERFORMANCE DATA 3ipolar Transistors LIM IT C O NDITIONS CH AR ACTER ISTIC S BR EA KD O W N V O LT A G E RCA Typ« Polarity and : Material Device Dissi pation Collector Current Contin	OCR Scan	GEbfl73 QG33bl T-21-OÃ SK3003A/126A T-008 SK3004/102A T-004 SK3006/160 T-001 SK3007A sk3018 SK3027/130 SK3083 SK3024 SK3004 SK3012/105 sk3123 SK3115/165 SK3115	PDF
SE32 Abstract: No abstract text available Text: PNP Silicon Planar High Voltage Transistor BF493SP FEATURES • • 3 5 0 V V CE0 Lo w leakage cu rre n ts DESCRIPTION T his tra n sisto r is designed s p e cifica lly fo r use in co lo u r te le visio n receiver and m o n ito r ap p lica tio n s requiring high bre a kd o w n voltage	OCR Scan	BF493SP SE32	PDF
2SC3873 Abstract: No abstract text available Text: Power Transistors 2SG3873 2S C 3873 Silicon PNP Triple-Diffused Planar Type P a c k a g e D im e n s io n s H igh B re a kd o w n V o lta g e , H igh S p e e d S w itch in g Unit ' mm • F e a tu re s 5.2max. 15.5max 6.9min • High speed switching 3.2 • High collector-base voltage V cbo	OCR Scan	2SC-3873 2SC3873 bi3ea52 2SC3873	PDF
MM4005 Abstract: MM4007 MM4006 Text: MM4005 SILICON thru MM4007 PNP SILIC O N A M P LIF IE R T RA N SISTO R S PNP SILIC O N A N N U LA R A M PLIF IER . . . designed fo r use in general-purpose am plifier applications. • C ollector-Em itter Bre a kd ow n V oltage @ I q - 10 m A d c B V c E O = 6 0 V d c (M in ) - M M 4 0 0 5	OCR Scan	MM4005 MM4007 MM4006 DeM4006 MM4005 MM4007	PDF
TIC COL 02 Abstract: MM4037 TC-512 FYJA Text: MM4037 SILICON PNP S IL IC O N T R A N S IS T O R PNP S IL IC O N A N N U L A R A M P L IF IE R T R A N S IS T O R . . . designed for use in general-purpose am plifier and sw itching applications. C olle ctor-Em itte r B re a kd o w n V o ltage — B V c E O = 4 0 V d c (M in ) @ I q = 1 0 m A d c	OCR Scan	MM4037 10mAdc TIC COL 02 MM4037 TC-512 FYJA	PDF
BC461 Abstract: JCASE BC441 Text: BC 394 THERMAL DATA The rm a l resistance ¡u n ctio n -ca se The rm a l resistance ju n c tio n -a m b ie n t V BR CBO C o lle cto r-b a se b re a kd o w n voltage 0e =0) l c = 100 V CEO (sus)* C o lle c to r-e m itte r sustaining voltage Ob = 0 ) V(BR)EBO E m itte r-b a se	OCR Scan		PDF
MM5000 Abstract: MM439 germanium transistor pnp Germanium mesa Text: MM439 SILICON A d v a n c e In fo r m a tio n PNP SILICON R F /V H F A M P L IFIE R T R A N SIST O R PNP SILICO N A N N U L A R R F /V H F A M P L IF IE R T R A N SIST O R . designed fo r use In R F an d V H F am plifie r applications. C ode ctor-E m itte r B re a kd o w n V oltage —	OCR Scan	MM439 MM5000 MM439 germanium transistor pnp Germanium mesa	PDF
5000LX Abstract: 1-10V Text: KD CZLD 穿雾型激光检测器一应用： KDCZLD 型穿雾型激光检测器是一种对射式高灵敏度检测装置。主要用于冶金工业自动控制系统中，环境特别恶劣，水雾特别严重的板坯到位检测或计数、控制，起自动控制开关作用。	Original	DC30V AC220V 100mA( 5000LX 5000LX 1-10V	PDF
L43F Abstract: No abstract text available Text: O nTM H ecKN e 6 e c K O H T a K T H b ie H o M e H K n a i y p a i* B b iK J iio n a T e jiM n a p a M e T p b i H a n p n > K e H M e n iiT a H M n n o c T O fiH H o r o T O K a 4 o d Tnnopa3Mep C x e M b i noAK^ KD H eH M « I* X o O c b K opn yc i/ i c n o c o ö	OCR Scan	BBO-y25-80P-1111 BBO-Y25-80P-1113-CA BBO-Y25-80P-1123-CA BBO-Y25-80P-3113-C BBO-Y25-80P-3123-C BBO-Y25-80P-5111-CA BBO-Y25-80P-5113-CA BBO-Y25-80P-5123-CA nB-PKY-Y-5111 BBO-Y25-80Y-5113-CA L43F	PDF
Untitled Abstract: No abstract text available Text: PNP Silicon Planar Medium Power Transistors Z TX 554 ZTX 555 ZTX 556 ZX557 FEATURES • • • • • 1W p o w e r d issipation a t T amb = 2 5 ° C V oltages up to 3 0 0 V Excellent gain c h a ra cte ristics up to 3 0 0 m A L o w sa tu ra tio n voltages	OCR Scan	ZX557 ZTX554 ZTX555 ZTX556 ZTX557	PDF
Untitled Abstract: No abstract text available Text: SIEMENS NPN Silicon High-Voltage Transistor BFN 22 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: BFN 23 PNP	OCR Scan	Q62702-F1024 OT-23 EHP00610 flE35b05 EHP00612 235b05	PDF
Untitled Abstract: No abstract text available Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - FEBRUARY 1996 FEATURES * * H igh V CE0 L o w s a tu ra tio n vo lta g e C O M PLEM ENTAR Y TYPE: - BSP20 PAR TM ARKING DETAIL: - BSP15 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M BO L VALUE UNIT C o lle c to r-B a s e V o lta g e	OCR Scan	OT223 BSP20 BSP15 -175V 20MHz 300fis. FMMTA92	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON RülD@œi[LI BTIs! IS!inCi BCP51/52/53 MEDIUM POWER AMPLIFIER . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL	OCR Scan	BCP51/52/53 BCP54, BCP55 BCP56 BCP51 BCP52 BCP53	PDF
Untitled Abstract: No abstract text available Text: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BCW30 SMALL SIGNAL PNP TRANSISTORS Type M arking B C W 30 C2 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO AMPLIFICATION AND	OCR Scan	BCW30 OT-23 OT-23	PDF

Untitled Abstract: No abstract text available Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1 - NOVEMBER 1998 FEATURES * 500 V o lt VCE0 * 150m A c o n tin u o u s c u rre n t * Ptot = 2 W a tt PARTM ARKING D E T A IL - X <VC FZT560 ABSOLUTE M AXIM UM RATINGS. PARAMETER VALUE UNIT VcBO	OCR Scan	OT223 FZT560 -100m	PDF
Untitled Abstract: No abstract text available Text: SM-8 DUAL PNP MEDIUM POWER ZDT1147 HIGH GAIN TRANSISTORS ISSUE 1 - AUGUST 1997 ABSOLUTE M A XIM U M RATINGS. PARAMETER C o lle c to r-B a s e V o lta g e SYMBOL VA LU E U NIT V V VcBO -15 C o llec to r-E m itte r V o ltag e VcEO -12 E m itte r-B a s e V o lta g e	OCR Scan	ZDT1147	PDF
Untitled Abstract: No abstract text available Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - AUGUST 1995 _ FEATURES vCE0 * H igh * L o w s a tu ra tio n vo lta g e CO M PLEM ENTAR Y TYPE: -B S P 1 9 PAR TM ARKING DETAIL: - BSP16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT C o lle c to r-B a s e V o lta g e	OCR Scan	OT223 BSP16 -100nA -280V 300fis. FMMTA92	PDF
KD 334 Abstract: No abstract text available Text: SGS-THOMSON BCW30 iW SMALL SIGNAL PNP TRANSISTORS Type M arking BC W 30 C2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING ciR currs LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING INTERNAL SCHEMATIC DIAGRAM	OCR Scan	BCW30 KD 334	PDF
Untitled Abstract: No abstract text available Text: rz7 Ä T# SGS-m0MS0N bcs57 r a o e œ iiL iie r a * ® BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING	OCR Scan	bcs57 BC858 BC857 BC847 OT-23 BC857/BC858 OT-23	PDF
Untitled Abstract: No abstract text available Text: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BC847 SMALL SIGNAL NPN TRANSISTORS Type M arking B C 847B 1F . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL GENERAL PURPOSE . PNP COMPLEMENT IS BC857	OCR Scan	BC847 BC857 OT-23 OT-23	PDF
Untitled Abstract: No abstract text available Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 Q FEATURES * S u ita b le fo r AF d riv e rs and o u tp u t stages * H igh c o lle c to r c u rre n t and L o w VCE sat C O M PLEM ENTARY TYPE BCP55 PARTM ARKING DETAILS - BCP52 B C P 5 2 - 10	OCR Scan	OT223 BCP55 BCP52 -10DpA -500m -150m	PDF
2N6731 Abstract: No abstract text available Text: Silicon Planar Medium Power Transistors NPN 2N6731 PNP 2N 6732 FEATURES • High V CEratings: V CE0 = 8 0 V m in • Exceptional p o w e r dissip a tio n capabilities - 2 W @ T case = 2 5 °C - 1 W Tr - 2 5 » C • Low sa tu ra tio n voltages DESCRIPTION	OCR Scan	2N6731 SE198	PDF
cb 10 b 60 kd Abstract: 2N4126 Text: TOSHIBA 2N4126 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqbo -50nA Max. @ Vqb _ -20V - I^bo = -50nA (Max.) @ V^g = -3V • Low Saturation Voltage - VQE(satj = -0.4V (Max.) @ lc = -50mA, lB = -5mA	OCR Scan	2N4126 -50nA -50mA, 2N4124 cb 10 b 60 kd 2N4126	PDF
BF 422 Abstract: No abstract text available Text: SIEMENS NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 421, BF 423 PNP Type Marking BF 420 B F 422 Ordering Code Pin Co nfigural ion	OCR Scan	Q62702-F531 Q62702-F495 mA102 fiS35b05 D151t BF 422	PDF

KD PNP Search Results

KD PNP Result Highlights (5)

KD PNP Datasheets Context Search

sk3018

SE32

2SC3873

MM4005

TIC COL 02

BC461

MM5000

5000LX

L43F

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KD 334

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2N6731

cb 10 b 60 kd

BF 422