cc 052
Abstract: No abstract text available
Text: TO SH IBA THMD51E30B70,75,80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E30B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59SM803BFT DRAMs and PLL/Registers on a printed circuit board.
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THMD51E30B70
THMD51E30B
864-word
72-bit
TC59SM803BFT
72-bit
Refre15
cc 052
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75,-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDS X4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59S6416/08/04CFT/CFTL-75
576-WORDS
16-BITS
152-WORDSX4BANKSX8-BITS
304-WORDSX4BANKSX4-BITS
TC59S6416CFT/CFTL
576-wordsX4
TC59S6408CFT/CFTL
TC59S6404CFT/CFTL
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Untitled
Abstract: No abstract text available
Text: T O S H IB A THMY7280H1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280H1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59SM716FT DRAMs and an unbuffer on a printed circuit board.
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THMY7280H1EG-75
THMY7280H1EG
608-word
72-bit
TC59SM716FT
72-bit
168-pin
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133M
Abstract: TC59S6432DFT A10rA
Text: TOSHIBA TC59S6432DFTI/DFTLI-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON MONOLITHIC 524.288-WORDSX4BANKSX32-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6432DFTI/DFTLI is a CMOS synchronous dynamic random access memory organized as 524.288-wordsX4 banks X 32 bits. Fully synchronous operations are referenced to the positive edges of
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TC59S6432DFTI/DFTLI-70
288-WORDSX4BANKSX32-BITS
TC59S6432DFTI/DFTLI
288-wordsX4
Fiqure21
62MAX
133M
TC59S6432DFT
A10rA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY12N11A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N11A is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.
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THMY12N11
216-WORD
64-BIT
THMY12N11A
TC59SM708AFT/AFTL
168-pin
64-bit
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THLY12N11C70
Abstract: No abstract text available
Text: TOSHIBA THLY12N11C70,70L,75,75L,80,80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY12N11C is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816CFT/CFTL DRAMs on a printed circuit board.
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THLY12N11C70
216-WORD
64-BIT
THLY12N11C
TC59SM816CFT/CFTL
75/75L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7216H1 EG-80#-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216H1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708FT/FTL DRAMs and an unbuffer on a printed circuit board.
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216-WORD
72-BIT
THMY7216H1
EG-80#
THMY7216H1EG
TC59SM708FT/FTL
72-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA T H M Y 2 5 N 1 1B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25N11B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.
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1B70f75f80
THMY25N11B
432-word
64-bit
TC59SM808BFT
64-bit
THMY25N11B)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7240F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7240F1BEG is a 4,194,304-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59S6416BFT DRAMs and an unbuffer on a printed circuit board.
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THMY7240F1
BEG-80
304-WORD
72-BIT
THMY7240F1BEG
TC59S6416BFT
72-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7280F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280F1BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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THMY7280F1
BEG-80
THMY7280F1BEG
608-word
72-bit
TC59S6408BFT
72-bit
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4N 26 TFK
Abstract: No abstract text available
Text: T O S H IB A TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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MY7216E1
BEG-80
216-WORD
72-BIT
THMY7216E1BEG
TC59S6408BFT
72-bit
4N 26 TFK
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59S6416/08/04CFT/CFTL-75
576-WORDSX4BANKSx
16-BITS
152-WORDSX4BANKSX8-BITS
304-WORDSX4BANKSX4-BITS
TC59S6416CFT/CFTL
576-wordsX4
TC59S6408CFT/CFTL
TC59S6404CFT/CFTL
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lyvi
Abstract: No abstract text available
Text: TO SHIBA THLY648031FG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY648031FG is a 8,388,608-word by 64-bit synchronous dynam ic RAM module consisting of eight TC59S6408FT DRAMs on a printed circuit board.
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608-WORD
64-BIT
THLY648031FG-10
THLY648031FG
TC59S6408FT
THLY648031FG)
lyvi
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75#-80#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59S6416/08/04CFT/CFTL-75#
576-WORDSX4BANKSx
16-BITS
152-WORDSX4BANKSX8-BITS
304-WORDSX4BANKSX4-BITS
TC59S6416CFT/CFTL
576-wordsX4
TC59S6408CFT/CFTL
TC59S6404CFT/CFTL
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THLY644031BFG-80,-80L,-10,-10L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY644031BFG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416BFT/BFTL DRAMs on a printed circuit board.
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THLY644031BFG-80
304-WORD
64-BIT
THLY644031BFG
TC59S6416BFT/BFTL
THLY644031BFG)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY25E11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E11B is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.
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THMY25E11B70f75f80
THMY25E11B
432-word
72-bit
TC59SM808BFT
72-bit
THMY25E11B)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THLY25N01 B70f70Lf75f75Lf80f80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY25N01B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM816BFT/BFTL DRAMs on a printed circuit board.
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THLY25N01
B70f70Lf75f75Lf80f80L
THLY25N01B
432-word
64-bit
TC59SM816BFT/BFTL
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lm 524n
Abstract: 2095H
Text: TO SH IBA TENTATIVE THLG645111 AFG-8,-10,-12 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 524n 288-WORD BY 64-BIT SYNCHRONOUS GRAPHICS RAM MODULE DESCRIPTION The THLG645111AFG is a 524,288-word by 64-bit synchronous graphics RAM module consisting of two TC59G1631AFB SGRAMs on a printed circuit board.
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THLG645111
THLG645111AFG
288-word
64-bit
TC59G1631AFB
THLG645111AFG-8
lm 524n
2095H
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TOSHIBA MG75
Abstract: TC59SM716FT
Text: TO SH IBA THLY6480X1 M G -7 5 #-75L#-80#-80L TENTATIVE TOSHIBA HYBRID DIGI rAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6480X1MG is a 8,388,608-word by 6- -bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circ ait board.
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THLY6480X1
MG-75
608-WORD
64-BIT
THLY6480X1MG
TC59SM716FT/FTL
TOSHIBA MG75
TC59SM716FT
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY643281 EG-80f-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY643281EG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S64M708FT/FTL DRAMs on a printed circuit board.
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THMY643281
EG-80
432-WORD
64-BIT
THMY643281EG
TC59S64M708FT/FTL
64-bit
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TC59SM716FT
Abstract: No abstract text available
Text: TO SH IBA THMY648091 EG-80#-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY648091EG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT DRAMs and an unbuffer on a printed circuit board.
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THMY648091
EG-80
608-WORD
64-BIT
THMY648091EG
TC59SM716FT
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semiconductor 80L
Abstract: No abstract text available
Text: TOSHIBA THLY6416G1FG-75,-75L,-80,-80L ABSOLUTE M AXIM UM RATINGS SYMBOL ITEM RATING UNIT NOTES V IN Input Voltage - 0 .3 - V DD + 0.3 V 1 VOUT Output Voltage - 0 . 3 - V DD + 0.3 V 1 V dd Power Supply Voltage -0.3 - 4 .6 V 1 t opr Operating Temperature 0-70
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LY6416G1
FG-75
A0-A11,
THLY6416G1FG)
semiconductor 80L
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70l7
Abstract: No abstract text available
Text: TO SH IBA T H M Y 6 4 E 1 1A 7 0 #70L,75f75L#80#80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY64E11A is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of 5
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THMY64E11
608-WORD
72-BIT
THMY64E11A
TC59SM716AFT/AFTL
168-pin
72-bit
70l7
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D018
Abstract: D019 D032
Text: T O S H IB A THMY25N01A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The TH M Y25N 01A is a 33,554,432-w ord by 64-bit synchronous dynamic RAM module consisting of 16 TC 59SM 708A FT/A FTL DRAMs and an unbuffer on a printed circuit board.
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THMY25N01
432-WORD
64-BIT
THMY25N01A
TC59SM708AFT/AFTL
168-pin
64-bit
D018
D019
D032
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