KA TRANSISTOR 26 TO 40 GHZ Search Results

KA TRANSISTOR 26 TO 40 GHZ Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

KA TRANSISTOR 26 TO 40 GHZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TGA2519-SG Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519 Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m	Original	AsareavailableforkeybandsacrossDCto100GHz Alldevicesare100% 11GHzCut-OffFreq TGC1430F-EPU TGC1430G-EPU TGC4401-EPU TriQuintSemiconductor5/06 S11/S22 DC-20 DC-18 TGA2519-SG HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519	PDF
BFG591 Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEA TUR ES D ES C R IPTIO N • High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin S O T 223 package. • Low noise figure • High transition frequency	OCR Scan	BFG591 voltage929 7110A2b BFG591	PDF
BFG591 amplifier Abstract: BFG591 equivalent of SL 100 NPN Transistor transistor fp 1016 2T3 transistor BFG591 Application Notes sl 100 Transistor Equivalent list SL 100 NPN Transistor DIN45004B NPN power transistor spice Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEA TUR ES D ES C R IPTIO N • High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin S O T 223 package. • Low noise figure • High transition frequency	OCR Scan	BFG591 OT223 MSB002 OT223. 711005b BFG591 amplifier BFG591 equivalent of SL 100 NPN Transistor transistor fp 1016 2T3 transistor BFG591 Application Notes sl 100 Transistor Equivalent list SL 100 NPN Transistor DIN45004B NPN power transistor spice	PDF
2SC1424 Abstract: 2SC4090 017 545 71 32 02 2SC2026 Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 I • SMALL COLLECTOR CAPACITANCE: 1 pF	OCR Scan	NE73435) NE734 NE73400) S12S21\| 2SC1424 2SC4090 017 545 71 32 02 2SC2026	PDF
HXTR-5103 Abstract: HXTR-5101 it 5001 HXTR-5001 S21E Text: LINEAR POWER TRANSISTOR CHIP COMPONENTS HXTR-5001 CIRCUITS H E W L E T T PACKARD Features INTEGRATED HIGH P1dB LINEAR POWER 23 dBm Typical at 2 GHz 22 dBm Typical at 4 GHz HIGH P1dB GAIN 13.5 dB Typical at 2 GHz 8.0 dB Typical at 4 GHz LOW DISTORTION FOR HYBRID	OCR Scan	HXTR-5001 HXTR-5001 HXTR-5103 HXTR-5101 it 5001 S21E	PDF
varistor 593 ph 275v Abstract: varistor 275 593 ph S20 K275 varistor ABB inverter motor fault code Text: CATALOGUE 4.4 www.weidmueller.com Saudi Arabia Serbia Singapore Slovakia Slovenia South Africa Spain Sweden Switzerland Taiwan Thailand Tunisia Turkey Ukraine United Arab Emirates United States Uruguay Uzbekistan Venezuela Vietnam Weidmüller is a leading international provider of solutions	Original	1271290000/01/2011/SMMD varistor 593 ph 275v varistor 275 593 ph S20 K275 varistor ABB inverter motor fault code	PDF
MOSFET J162 Abstract: j162 MOSFET J147 Text: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz	Original	AGRA10XM AGRA10 IS-95 DS04-202RFPP DS04-139RFPP) MOSFET J162 j162 MOSFET J147	PDF
MOSFET J162 Abstract: J473 MOSFET J147 Text: Preliminary Data Sheet March 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz	Original	AGRA10XM AGRA10 IS-95 DS03-127RFPP MOSFET J162 J473 MOSFET J147	PDF
0203S Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147 Text: Preliminary Data Sheet April 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz	Original	AGRA10XM AGRA10 IS-95 DS04-139RFPP DS03-127RFPP) 0203S AGRA10XM JESD22-C101A J162 j507 MOSFET J147	PDF
MSC1002 Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition	OCR Scan	28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram	PDF
tns capacitors Abstract: capacitor F3 037 02 100B120FW500X Text: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor	Original	AGRA10E IS-95 DS04-196RFPP DS04-096RFPP) tns capacitors capacitor F3 037 02 100B120FW500X	PDF
AGRA10E Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors Text: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable	Original	AGRA10E AGRA10E IS-95 C32/F, DS03-161RFPP DS03-038RFPP) AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors	PDF
AGR045010 Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB Text: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor	Original	AGRA10E AGRA10E IS-95 DS04-096RFPP DS03-161RFPP) AGR045010 AGRA10EU JESD22-C101A RF MOSFET CLASS AB	PDF
REGULATOR IC 7804 Abstract: AN-A007 AVANTEK MSA-0885 7804 regulator AVANTEK AN-A001 AN-A002 Avantek a08 S parameters for ATF 10136 Avantek aft avantek Text: M HEW LETT AN-A007: PACKARD 4 g h z Television Receive Only LNB Design Introduction This note describes the design of a modern LNB low noise block converter for the C band (3.7-4.2 GHz) TVRO market. The block converter consists of a low noise amplifier (LNA), a	OCR Scan	AN-A007: ATF-10236 ATF-10736 AN-A001: AN-S005: 5091-8825E REGULATOR IC 7804 AN-A007 AVANTEK MSA-0885 7804 regulator AVANTEK AN-A001 AN-A002 Avantek a08 S parameters for ATF 10136 Avantek aft avantek	PDF

Untitled Abstract: No abstract text available Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high m obility electrons. Its excellent low noise and high associated gain make it suitable	OCR Scan	NE32400, NE24200 NE32400 NE24200 NE32400	PDF
"MARKING CODE P5" Abstract: BFG425W Text: DISC RETE S E M IC O N D U C TO R S M EUT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors	OCR Scan	BFG425W 125104/00/04/pp12 "MARKING CODE P5" BFG425W	PDF
BFG403W Abstract: No abstract text available Text: DISC RETE S E M IC O N D U C TO R S M EUT BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors	OCR Scan	BFG403W 125104/00/04/pp12 BFG403W	PDF
transistor marking 2d ghz Abstract: BFG41OW Text: DISC RETE S E M IC O N D U C TO R S BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification	OCR Scan	BFG410W 125104/00/04/pp12 transistor marking 2d ghz BFG41OW	PDF
transistor NEC D 882 p Abstract: nec d 882 p datasheet nec d 882 p Nec K 872 nec d 882 p transistor KA transistor 26 to 40 GHZ transistor NEC D 587 NE32400 transistor NEC 882 p NE24200 Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable	Original	NE32400, NE24200 NE32400 NE24200 NE32400 transistor NEC D 882 p nec d 882 p datasheet nec d 882 p Nec K 872 nec d 882 p transistor KA transistor 26 to 40 GHZ transistor NEC D 587 transistor NEC 882 p	PDF
HEMT 36 ghz transistor Abstract: low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor Text: EC2827 40GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2827 is a Ka/K band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with	Original	EC2827 40GHz EC2827 18GHz 40GHz DSEC28277003 HEMT 36 ghz transistor low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor	PDF
nec 151 Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900 Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.	OCR Scan	NE32900 NE32900 nec 151 transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor	PDF
k1357 transistor Abstract: K1357 c2335 K4106 nec C1685 transistor siemens b25353 c2335 r transistor c2335 k1117 b25353 Text: Contents Application and Selector Guides Page 5 9 Applications Capacitor Questionnaire 17 20 General Technical Information 23 Quality 55 DC Capacitors 63 AC Capacitors 143 Mounting Parts Insulating Parts 325 333 Subject Index Symbols and Terms 335 338 1	Original		PDF
K4106 Abstract: transistor kA2 smd b25353 smd transistor ka2 C3227* transistor B25355 Siemens matsushita b5 VS4200 k2197k4 free transistor equivalent book more pag Text: Contents Application and Selector Guides Page 17 9 Applications Capacitor Questionnaire 17 20 General Technical Information 23 Quality 55 DC Capacitors 63 AC Capacitors 143 Mounting Parts Insulating Parts 325 333 Subject Index Symbols and Terms 335 338 1	Original		PDF
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF

KA TRANSISTOR 26 TO 40 GHZ Search Results

KA TRANSISTOR 26 TO 40 GHZ Result Highlights (5)

KA TRANSISTOR 26 TO 40 GHZ Datasheets Context Search

TGA2519-SG

BFG591

BFG591 amplifier

2SC1424

HXTR-5103

varistor 593 ph 275v

MOSFET J162

MOSFET J162

0203S

MSC1002

tns capacitors

AGRA10E

AGR045010

REGULATOR IC 7804

Untitled

"MARKING CODE P5"

BFG403W

transistor marking 2d ghz

transistor NEC D 882 p

HEMT 36 ghz transistor

nec 151

k1357 transistor

K4106

UPC8236