K7N323601M Search Results

Contextual Info: K7N323601M K7N321801M 1Mx36 & 2Mx18 Pipelined NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 0.5 1.0 History Draft Date Remark 1. Initial document. 1. Add 165FBGA package 1. Update JTAG scan order 2. Speed bin merge.

Contextual Info: K7N323601M K7N321801M Preliminary 1Mx36 & 2Mx18 Pipelined NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 Draft Date History 1. Initial document. 1. Add 165FBGA package 1. Update JTAG scan order 2. Speed bin merge.

Contextual Info: K7N323601M K7N321801M 1Mx36 & 2Mx18 Pipelined NtRAMTM 36Mb NtRAMTM Specification 100TQFP / 165FBGA with Pb only INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: K7N323601M K7N321801M 1Mx36 & 2Mx18 Pipelined NtRAM TM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAM TM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Preliminary 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary

K7N321801M

Abstract: K7N323601M
Contextual Info: K7N323601M K7N321801M Preliminary 1Mx36 & 2Mx18 Pipelined NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 0.5 Draft Date History 1. Initial document. 1. Add 165FBGA package 1. Update JTAG scan order

NtRAM

Abstract: K7N321801M K7M321825M-QC75 K7N323601M
Contextual Info: K7N323601M K7N321801M 1Mx36 & 2Mx18 Pipelined NtRAM TM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAM TM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Preliminary 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary

NtRAM

Abstract: K7N323601M K7N321801M
Contextual Info: K7N323601M K7N321801M Preliminary 1Mx36 & 2Mx18 Pipelined NtRAM TM 1Mx36 & 2Mx18-Bit Pipelined NtRAM TM FEATURES GENERAL DESCRIPTION • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.

K7N321801M

Abstract: K7N323601M
Contextual Info: K7N323601M K7N321801M Preliminary 1Mx36 & 2Mx18 Pipelined NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 Draft Date History 1. Initial document. 1. Add 165FBGA package 1. Update JTAG scan order 2. Speed bin merge.

Contextual Info: K7N323601M K7N321801M 1Mx36 & 2Mx18 Pipelined NtRAM TM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAM TM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Preliminary 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary

Contextual Info: K7N323601M K7N321801M Preliminary 1Mx36 & 2Mx18 Pipelined NtRAM TM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 Draft Date History May. 10. 2001 1. Initial document. Remark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

K7N321801M

Abstract: K7N323601M
Contextual Info: K7N323601M K7N321801M Preliminary 1Mx36 & 2Mx18 Pipelined NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 Draft Date History 1. Initial document. 1. Add 165FBGA package 1. Update JTAG scan order 2. Speed bin merge.

K7Z327285M

Contextual Info: K7Z327285M Preliminary 512Kx72 DLW Double Late Write RAM Document Title 512Kx72 DLW(Double Late Write) RAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Device name change from Double Late Write SigmaRAM to Double Late Write RAM

K7M321825M

Abstract: K7M321825M-QC75 K7M323625M K7M323625M-QC75
Contextual Info: K7M323625M K7M321825M 1Mx36 & 2Mx18 Flow-Through NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Preliminary 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

Contextual Info: Preliminary 512Kx72 Pipelined NtRAM TM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 0.1 1. Initial document. 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change. tOH min /tLZC(min) from 0.8 to 1.5 at -25

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

K7N321845M

Abstract: K7N323645M
Contextual Info: K7N323645M K7N321845M Preliminary 1Mx36 & 2Mx18 Pipelined NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 History Draft Date Remark 1. Initial document. 1. Add 165FBGA package 1.Update JTAG scan order

K7M321825M

Abstract: K7M323625M
Contextual Info: K7M323625M K7M321825M Preliminary 1Mx36 & 2Mx18 Flow-Through NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 0.5 History Draft Date Remark 1. Initial document. 1. Add 165FBGA package 1. Update JTAG scan order

1H08S

Abstract: PI6C2405A-1HW ASM706CUA SOIC-6 microchip ADM809RAR ADM705AN MAX809SEUR T ASM5P2309-1H-16-S K7N163601B MAX810JEUR
Contextual Info: Supervisors Cross Reference Guide Alliance Maxim/Dallas IMP ASM1232LP DS1232LPS-2 IMP1232LP ASM1232LPCMA DS1232LP IMP1232LPCMA ASM1232LPEMA DS1232LP IMP1232LPEMA ASM1232LPN DS1232LP IMP1232LPN Analog Devices Micrel Microchip MIC1232N TC1232CPA - - - - - -

K7M321825M

Abstract: K7M323625M
Contextual Info: K7M323625M K7M321825M 1Mx36 & 2Mx18 Flow-Through NtRAMTM 36Mb M-die NtRAMTM Specification 100 TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: K7N323645M K7N321845M 1Mx36 & 2Mx18 Pipelined NtRAM TM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Preliminary 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary 0.2

Contextual Info: K7N323645M K7N321845M Preliminary 1Mx36 & 2Mx18 Pipelined NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial document. May. 10. 2001 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15

ADM809RAR

Abstract: AS7C256A hsbga 416 lcd cross reference IDT CYPRESS CROSS REFERENCE clocks DS1232* watch dog timer Product Selector Guide mbg* sot143 FS781 IDT74SSTV16857
Contextual Info: DISCLAIMER Alliance Semiconductor Corporation reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. Alliance Semiconductor does not assume any responsibility for use of any circuitry described other than the circuitry embodied