K75T60 IGBT Search Results
K75T60 IGBT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| GT30J110SRA |
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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| GT30N135SRA |
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IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 |
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| GT30J65MRB |
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IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) |
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| TLP5702H |
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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| TLP5705H |
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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K75T60 IGBT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
K75T60
Abstract: 400w power supply K75T60 igbt ikw75n60
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IKW75N60T PG-TO-247-3-1 K75T60 400w power supply K75T60 igbt ikw75n60 | |
k75t60
Abstract: K75T60 datasheet IKW75N60T k75t6 Q67040S4719
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IKW75N60T Dec-04 k75t60 K75T60 datasheet IKW75N60T k75t6 Q67040S4719 | |
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Contextual Info: TRENCHSTOP Series IKW75N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C |
Original |
IKW75N60T | |
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Contextual Info: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
Original |
IKW75N60T | |
K75T60
Abstract: K75T60 datasheet IKW75N60T 000823 ikw75n60 K75T60 igbt PG-TO-247-3 600v 75a
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IKW75N60T PG-TO-247-3 K75T60 K75T60 datasheet IKW75N60T 000823 ikw75n60 K75T60 igbt PG-TO-247-3 600v 75a | |
K75T60
Abstract: IKW75N60T PG-TO-247-3-21 600V75A
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IKW75N60T PG-TO-247-3-21 K75T60 IKW75N60T PG-TO-247-3-21 600V75A | |
k75t60
Abstract: K75T60 igbt K75T60 datasheet IKW75N60T ikw75n60 PG-TO-247-3-21 diode 10a 400v k75t6
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IKW75N60T PG-TO-247-3-21 k75t60 K75T60 igbt K75T60 datasheet IKW75N60T ikw75n60 PG-TO-247-3-21 diode 10a 400v k75t6 | |
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Contextual Info: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
Original |
IKW75N60T PG-TO-247-3 | |
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Contextual Info: TRENCHSTOP Series IKW75N60T q Low Loss DuoPack : IGBT in TRENCHSTOP® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
Original |
IKW75N60T | |
K75T60Contextual Info: IKW75N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C |
Original |
IKW75N60T K75T60 |