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    K50T60 IGBT Search Results

    K50T60 IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    K50T60 IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k50t60

    Abstract: No abstract text available
    Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW50N60T k50t60

    Untitled

    Abstract: No abstract text available
    Text: TRENCHSTOP Series IKW50N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s


    Original     		PDF IKW50N60T

    k50t60

    Abstract: k50t60 pdf datasheet IKW50N60T Q67040S4718 Datasheet k50t60 k50t6 TO-247AC Package igbt
    Text: TrenchStop Series IKW50N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original     		PDF IKW50N60T Dec-04 k50t60 k50t60 pdf datasheet IKW50N60T Q67040S4718 Datasheet k50t60 k50t6 TO-247AC Package igbt

    k50t6

    Abstract: k50t60 K50T
    Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode •            C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW50N60T k50t6 k50t60 K50T

    k50t60

    Abstract: IKW50N60T k50t60 pdf datasheet k50t6 Datasheet k50t60 K50T k50t60 2 B PG-TO-247-3-21 *k50t60 IKW50N60
    Text: TrenchStop Series IKW50N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW50N60T k50t60 IKW50N60T k50t60 pdf datasheet k50t6 Datasheet k50t60 K50T k50t60 2 B PG-TO-247-3-21 *k50t60 IKW50N60

    K50T60

    Abstract: Q67040S4718 IKW50N60T
    Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW50N60T K50T60 Q67040S4718

    k50t60

    Abstract: K50t60 igbt
    Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW50N60T k50t60 K50t60 igbt

    IKW50N60T

    Abstract: K50T60 k50t60 pdf datasheet Datasheet k50t60 "Power Diode" 500V 20A 1280A PG-TO-247-3
    Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW50N60T IKW50N60T K50T60 k50t60 pdf datasheet Datasheet k50t60 "Power Diode" 500V 20A 1280A PG-TO-247-3