K4F641612D Search Results

K4F641612D

Abstract: K4F661612D
Contextual Info: Industrial Temperature K4F661612D, K4F641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low pow er)

K4F641612D

Abstract: K4F661612D
Contextual Info: K4F661612D, K4F641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power)

Contextual Info: M372V0805DT0-C DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M components are applied to this module. M372V0805DT0-C M372V0805DT0-C DRAM MODULE M372V0805DT0-C Fast Page Mode

Contextual Info: M372V0405DT0-C DRAM MODULE M372V0405DT0-C Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372V0405DT0-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M372V0405DT0-C consists of four 4Mx16bits & two 4Mx4bits

Contextual Info: M372V0405DT0-C DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M DRAM components are applied to this module. M372V0405DT0-C M372V0405DT0-C DRAM MODULE

Contextual Info: M372V0805DT0-C DRAM MODULE M372V0805DT0-C Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372V0805DT0-C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung M372V0805DT0-C consists of eight