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    K4E151612C Price and Stock

    Samsung Semiconductor K4E151612C-TL60

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    Bristol Electronics K4E151612C-TL60 472
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    Quest Components K4E151612C-TL60 374
    • 1 $4
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    Samsung Semiconductor K4E151612C-TC60

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    Quest Components K4E151612C-TC60 750
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    Samsung Electronics Co. Ltd K4E151612C-TC60

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    ComSIT USA K4E151612C-TC60 390
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    K4E151612C Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4E151612C-JC50 Samsung Electronics DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4E151612C-JC60 Samsung Electronics DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4E151612C-JL45 Samsung Electronics DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4E151612C-JL50 Samsung Electronics DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4E151612C-JL60 Samsung Electronics DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4E151612C-LC50 Samsung Electronics DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4E151612C-LC60 Samsung Electronics DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4E151612C-LL45 Samsung Electronics DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4E151612C-LL50 Samsung Electronics DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4E151612C-LL60 Samsung Electronics DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4E151612C-TC50 Samsung Electronics DRAM Chip: EDO: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF

    K4E151612C Datasheets Context Search

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    Abstract: No abstract text available
    Text: K4E171611C, K4E151611C K4E171612C, K4E151612C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K


    Original     		PDF K4E171611C, K4E151611C K4E171612C, K4E151612C 16Bit 1Mx16 Sam1612C 400mil