K4107 POWER TRANSISTOR Search Results

K4107 POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

K4107 POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Low drain−source ON resistance Unit: mm : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : \|Yfs\| = 8.5 S (typ.)	Original	2SK4107	PDF
k4107 Abstract: toshiba k4107 2SK4107 K4107 POWER TRANSISTOR toshiba 2sk4107 toshiba transistor k4107 *k4107 Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Low drain−source ON resistance Unit: mm : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : \|Yfs\| = 8.5 S (typ.)	Original	2SK4107 k4107 toshiba k4107 2SK4107 K4107 POWER TRANSISTOR toshiba 2sk4107 toshiba transistor k4107 *k4107	PDF
k4107 Abstract: toshiba k4107 2SK4107 Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Unit: mm Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.) : \|Yfs\| = 8.5 S (typ.) • High forward transfer admittance	Original	2SK4107 k4107 toshiba k4107 2SK4107	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Low drain−source ON resistance Unit: mm : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.)

Original

2SK4107

PDF

k4107

Abstract: toshiba k4107 2SK4107 K4107 POWER TRANSISTOR toshiba 2sk4107 toshiba transistor k4107 *k4107
Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Low drain−source ON resistance Unit: mm : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.)

Original

2SK4107 k4107 toshiba k4107 2SK4107 K4107 POWER TRANSISTOR toshiba 2sk4107 toshiba transistor k4107 *k4107

PDF

k4107

Abstract: toshiba k4107 2SK4107
Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Unit: mm Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.) : |Yfs| = 8.5 S (typ.) • High forward transfer admittance

Original

2SK4107 k4107 toshiba k4107 2SK4107

PDF