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    K3995 Search Results

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    K3995 Price and Stock

    Rochester Electronics LLC 3209K3995

    PROCESSOR FOR NETWORK RESOURCES
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    DigiKey 3209K3995 Bulk 2
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    RCA SK3995

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    Bristol Electronics SK3995 1
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    IBM 3209K3995

    Packet Routing Switch Serial Interface Converter
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    Rochester Electronics 3209K3995 504 1
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    Vishay Intertechnologies CRCW060366R5FKEA

    Thick Film Resistors - SMD 1/10watt 66.5ohms 1%
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    TTI CRCW060366R5FKEA Reel 35,000 5,000
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    Chemi-Con EKZE500ELL471MK20S

    Aluminum Electrolytic Capacitors - Radial Leaded 50volts 470uF 12.5X20
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    TTI EKZE500ELL471MK20S Bulk 28,000 100
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    K3995 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k3995

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power er MOSFETs K3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP • Package  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive


    Original
    2002/95/EC) 2SK3995 O-220C-G1 K3995 k3995 PDF

    k3995

    Abstract: 2sk3995 k399
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power er MOSFETs K3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP • Package  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive


    Original
    2002/95/EC) 2SK3995 O-220C-G1 K3995 k3995 2sk3995 k399 PDF

    k3995

    Abstract: 2SK3995
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power er MOSFETs K3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP • Features  Package  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive


    Original
    2002/95/EC) 2SK3995 O-220C-G1 K3995 k3995 2SK3995 PDF

    k3995

    Abstract: 2sk3995 k399 TO-220C-G1
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power er MOSFETs K3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP • Package  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive


    Original
    2002/95/EC) 2SK3995 O-220C-G1 K3995 k3995 2sk3995 k399 TO-220C-G1 PDF