K3799 TRANSISTOR Search Results

K3799 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k3799 Abstract: K3799 Transistor Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3799 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.0Ω (typ.) High forward transfer admittance: \|Yfs\| = 7.0S (typ.)	Original	2SK3799 k3799 K3799 Transistor	PDF
k3799 Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2SK3799 k3799	PDF
k3799 Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 6.0 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 720 V)	Original	2SK3799 k3799	PDF
K3799 Abstract: 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379 Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : \|Yfs\| = 6.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V)	Original	2SK3799 K3799 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379	PDF
K3799 Abstract: 2sk3799 2SK3799 equivalent transistor 2SK3799 Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2SK3799 K3799 2sk3799 2SK3799 equivalent transistor 2SK3799	PDF
Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2SK3799	PDF
K3799 Abstract: transistor 2SK3799 K3799 Transistor 2SK3799 Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 6.0 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 720 V)	Original	2SK3799 K3799 transistor 2SK3799 K3799 Transistor 2SK3799	PDF
K3799 Abstract: 2sk3799 2SK3799 equivalent K3799 Transistor Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2SK3799 K3799 2sk3799 2SK3799 equivalent K3799 Transistor	PDF
Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2SK3799	PDF