K3564 TRANSISTOR Search Results

K3564 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k3564 Abstract: transistor K3564 2SK3564 MARKING toshiba 133 LC1M-US-DC24 k3564 transistor transistor K3564 5 a Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3564 k3564 transistor K3564 2SK3564 MARKING toshiba 133 LC1M-US-DC24 k3564 transistor transistor K3564 5 a	PDF
transistor K3564 Abstract: K3564 K3564 toshiba Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3564 transistor K3564 K3564 K3564 toshiba	PDF
k3564 Abstract: transistor K3564 2SK3564 Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.)	Original	2SK3564 k3564 transistor K3564 2SK3564	PDF
transistor K3564 Abstract: K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564 Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3564 transistor K3564 K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564	PDF
k3564 Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.)	Original	2SK3564 k3564	PDF
k3564 Abstract: transistor K3564 K356 2SK35 Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.)	Original	2SK3564 k3564 transistor K3564 K356 2SK35	PDF
transistor K3564 Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2SK3564 transistor K3564	PDF