K2I TRANSISTOR Search Results

GMA marking

Contextual Info: SIEMENS BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 G H z at collector currents from 70mA to 130mA • Power amplifiers for D ECT and PCN systems • Integrated emitter ballast resistor

BFX60

Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
Contextual Info: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier

K2I transistor

Abstract: TRANSISTOR K 135
Contextual Info: SIEMENS BF775W NPN Silicon RF Transistor • Especially suitable for TV-sat and UHF tuners LOs Q62702-F1520 1=B m BF 775W ro II ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 3=C Package

Contextual Info: SIEMENS BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • ^ = 5.5GHz • Gold metalization for high reliability BFP 136W PAs Q62702-F1575 1 =E N> I! O ESP: Electrostatic discharge sensitive device, observe handling precaution!

pin diagram of bf 494 transistor

Abstract: siemens products transistor
Contextual Info: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability

IRIG hd

Contextual Info: l a n t e c HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS L È O m H /8 8 1 im r— F eatu res 400 mA pulsed output current DC to 30 M Hz bandwidth 200 V/jas slew rate Low harmonic distortion High input impedance—400 kil Low output impedance— 6 1 High power efficiency

transistor ECG 152

Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application

transistor ecg36

Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo

transistor pnp ecg 180

Abstract: Transistor 123AP 123AP transistor BU 102A transistor fet ecg transistor. ECG 123AP 4511 gm Bt 2313 transistor t18 FET ecg 123 transistor
Contextual Info: PHILIPS E C G INC S4E D Transistors icont'd ECG Type D escription and A p plicatio n • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at T c = 25°C Unless Otherwise Noted) C ollector To Base V olts C ollector To E m itter V olts Base to E m itter V olts

Bt 2313

Abstract: Transistor 123AP transistor t18 FET transistor BD 263 transistor ECG 152 transistor ecg 226 123ap Philips ECG 152 ic 2429 ECG24
Contextual Info: PHILIPS E C G INC S4E D Transistors icont'd ECG Type Description and Application • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Collector To Emitter Volts b v Ceo Base to Emitter Volts

tda AMP 12V

Abstract: TDA 4716 C 4714C IC tda 2525 20/TDA 4716 C
Contextual Info: SIEMENS IC fo r S w itc h e d -M o d e P o w e r S u p p lie s S M P S TDA 4714 C TDA 4716 C Bipolar IC Features • • • • • • • • • • Push-pull outputs (open collector) Double pulse suppression Dynamic current limitation Overvoltage protection

K2F transistor

Abstract: AP2202K-ADJTR AP2202K-ADJTRE1 AP2202 e2c marking AP2202ADJ
Contextual Info: Preliminary Datasheet 150mA RF ULDO REGULATOR AP2202 General Description Features The AP2202 is a 150mA ULDO regulator which provides very low noise 45µVrms at 80Hz-100KHz , ultra low dropout voltage (typically 165mV at 150mA), very low quiescent current (1µA maximum)

AP2202

Abstract: AP2202K-ADJTR AP2202K-ADJTRE1 AP2202R AP2202K-ADJ AP2202KADJ AP-220
Contextual Info: Data Sheet 150mA RF ULDO REGULATOR AP2202 General Description Features The AP2202 is a 150mA ULDO regulator which provides very low noise, ultra low dropout voltage typically 165mV at 150mA , very low standby current (1µA maximum) and excellent power supply ripple

150N3

Contextual Info: ANALOG DEVICES Ultrahigh Frequency Operational Amplifier □ AD5539 FEATURES Improved Replacement for Signetics SE/NE5539 CON NECTION DIAGRAM Plastic D IP N Package or Cedip (Q) Package AC PERFORMANCE Gain Bandwidth Product: 1.4 GHz typ Unity Gain Bandwidth: 220 MHz typ

Contextual Info: Data Sheet 150mA RF ULDO REGULATOR AP2202 General Description Features The AP2202 is a 150mA ULDO regulator which provides very low noise, ultra low dropout voltage typically 165mV at 150mA , very low standby current (1µA maximum) and excellent power supply ripple

transistor w10

Abstract: FR02 FR03 P100 SEG23
Contextual Info: Application Note 4559 Group Input/Output Ports 1． Abstract This document shows an example of how to set the input/output ports of the 4559 group of Renesas microcomputers and an application example for using those ports. 2． Introduction The application example explained in this document applies for use with the microcomputers and under the

AP2202

Abstract: AP2202K-ADJTR AP2202K-ADJTRE1 marking R22B
Contextual Info: Data Sheet 150mA RF ULDO REGULATOR AP2202 General Description Features The AP2202 is a 150mA ULDO regulator which provides very low noise, ultra low dropout voltage typically 165mV at 150mA , very low standby current (1µA maximum) and excellent power supply ripple

hp pin diode

Abstract: Microwave PIN diode HPND-4165 mini circulator phase shifter circulator AN929 HPND-4005 hp 3101 pin M 4005 G is what type of transistor 30 MHz phase shifters
Contextual Info: Applications of PIN Diodes Application Note 922 Introduction The most important property of the PIN diode is the fact that it can, under certain circumstances, behave as an almost pure resistance at RF frequencies, with a resistance value that can be varied

phase shifter circulator

Abstract: HPND-4005 Microwave PIN diode AN929 HPND-4165 tunnel diode
Contextual Info: Applications of PIN Diodes Application Note 922 Introduction The most important property of the PIN diode is the fact that it can, under certain circumstances, behave as an almost pure resistance at RF frequencies, with a resistance value that can be varied

AN-957

Abstract: circulator s-band datasheet HPND-4165 mini circulator nkt ceramic UHF Phase Shifter AN929 HPND-4005
Contextual Info: Applications of PIN Diodes Application Note 922 Introduction Characteristics of the PIN Diode The most important property of the PIN diode is the fact that it can, under certain circumstances, behave as an almost pure resistance at RF frequencies, with a resistance

D784031GC

Abstract: CR02 am transistor nec 78 D784035 D784031G 0007FH D784036A
Contextual Info: DATA SHEET ¿iPD784031 A MOS INTEGRATED CIRCUIT 16/ 8-BIT SINGLE-CHIP MICROCONTROLLER The /xPD784031(A) is a product of the /xPD784038 sub-series in the 78K/IV series. A stricter quality assurance program applies to the / xPD784031 (A) than the /¿PD784031 (standard product).

information applikation

Abstract: "Mikroelektronik" Heft mikroelektronik Heft CDB4151 mikroelektronik Heft 12 MH8475 MH7442 Mikroelektronik Information Applikation information applikation mikroelektronik CDB4153
Contextual Info: ' 1 o lE h f c p o n ih Information Applikation s o c h a lH ü n o n il- c Information Applikation HEFT 25 I M P O R T - I S T E IL 1 Ivob Halbleiterwerk frankfurt/ader | b e trie b im m b kom binat m ikroelektronik ] KAMMER DER TECH N IK I Bezirksvorstand Frankfurt/O.

D784035

Abstract: NEC Electronics uPD Series
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿uPD784035 A , 784036(A) 16/ 8-BIT SINGLE-CHIP MICROCONTROLLER The /xPD784036(A) is a product of the /xPD784038 sub-series in the 78K/IV series. A stricter quality assurance program applies to the /xPD784036(A) than the /¿PD784036 (standard product).

38027E8SP

Abstract: 38027E8FP N001C
Contextual Info: MITSUBISHI MICROCOM PUTERS 3802 Group SIN G LE-C H IP 8-BIT CM OS M ICRO COM PUTER DESCRIPTION FEA TU R ES The 3802 group is the 8-bit microcomputer based on the 740 family core technology. The 3802 group is designed for controlling systems that re­ quire analog signal processing and include two serial I/O