K2605 TOSHIBA Search Results

K2605 TOSHIBA Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
DF2B5M4ASL		Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
74HC4053FT		Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
TCR5RG28A		Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F

K2605 TOSHIBA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
k2605 Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605 Text: K2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) Low leakage current	Original	2SK2605 k2605 K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605	PDF
K2605 Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR Text: K2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) z Low leakage current	Original	2SK2605 45oducts K2605 K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR	PDF
K2605 Abstract: K2605 transistor 2SK2605 K2605 TOSHIBA Text: K2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) z Low leakage current	Original	2SK2605 K2605 K2605 transistor 2SK2605 K2605 TOSHIBA	PDF
k2605 Abstract: K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605 Text: K2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications z Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) : \|Yfs\| = 3.8 S (typ.) z High forward transfer admittance z Low leakage current	Original	2SK2605 k2605 K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605	PDF