K2350 POWER TRANSISTOR Search Results

K2350 POWER TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

K2350 POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K2350 transistor Abstract: k2350 K2350 Power transistor 2SK2350 Contextual Info: 2SK2350 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2350 Switching Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.26 Ω (typ.) z High forward transfer admittance	Original	2SK2350 K2350 transistor k2350 K2350 Power transistor 2SK2350	PDF
k2350 Abstract: K2350 transistor K2350 Power transistor 2SK2350 Contextual Info: 2SK2350 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2350 Switching Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.26 Ω (typ.) High forward transfer admittance	Original	2SK2350 k2350 K2350 transistor K2350 Power transistor 2SK2350	PDF
k2350 Abstract: K2350 transistor 2SK2350 Contextual Info: 2SK2350 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2350 Switching Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.26 Ω (typ.) z High forward transfer admittance	Original	2SK2350 k2350 K2350 transistor 2SK2350	PDF
K2350 Abstract: K2350 transistor 2SK2350 Contextual Info: 2SK2350 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2350 Switching Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.26 Ω (typ.) z High forward transfer admittance	Original	2SK2350 K2350 K2350 transistor 2SK2350	PDF