K13 TRANSISTOR Search Results

K13 transistor

Abstract: NPN Transistor Pair
Contextual Info: MMDT4413 Complementary NPN/PNP Transistor SOT-363 Features — Complementary Pair — One 4401-Type NPN, One 4403-Type PNP — Epitaxial Planar Die Construction — Ideal for Low Power Amplification and Switching MAKING: K13 Dimensions in inches and millimeters

50-12P1

Abstract: S2485
Contextual Info: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 Pin arangement see outlines T16 t O7 S18 Features

transistor P18

Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET ID25 VDSS RDSon PSMI 40/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 K12 L9 P18 R18 NTC Preliminary Data Sheet K13 MOSFET

Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET PSHM 40D/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 VDSS RDSon 1 L4 L6 L9 P18 R18 K12 NTC F10 Preliminary Data Sheet K13 MOSFET Symbol VDSS VGS ID25

237td

Contextual Info: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions

25T60

Abstract: .25T60 RG60s
Contextual Info: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 T16 Pin arangement see outlines t O7 S18 Features Maximum Ratings VCES

50-12P1

Contextual Info: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18

Contextual Info: ECO-PACTM 2 Power MOSFET ID25 VDSS RDSon trr PSHM 120D/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 L9 P18 R18 NTC F10 Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions

Contextual Info: ECO-PACTM 2 Power MOSFET PSHM 120/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 A1 E10 F10 L9 P18 R18 ID25 VDSS RDSon trr NTC Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions

4403

Abstract: pr 4401 J-STD-020A MMDT4413 PNP4403
Contextual Info: MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODELS: MMDT4413 Features • · · · · · Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching

Contextual Info: SPICE MODELS: MMDT4413 MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · · Complementary Pair SOT-363 A One 4401-Type NPN, One 4403-Type PNP B1 C2 E1 Epitaxial Planar Die Construction B C Ideal for Low Power Amplification and Switching

pr 4401

Abstract: PNP4403 4403 data sheet 4403 transistor br 4403 marking code B2 marking code C2 diode NPN SMALL SIGNAL TRANSISTOR datasheet Surface mount NPN/PNP complementary transistor J-STD-020A
Contextual Info: MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package

K13 transistor

Contextual Info: MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · · Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package

Contextual Info: SPICE MODELS: MMDT4413 MMDT4413 Lead-free COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · · Complementary Pair SOT-363 A One 4401-Type NPN, One 4403-Type PNP B1 C2 E1 Epitaxial Planar Die Construction B C Ideal for Low Power Amplification and Switching

Contextual Info: MMDT4413 COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction   Two Internally Isolated NPN/PNP Transistors in One Package  NPN = 4401 Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound.

Contextual Info: MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • • Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package

PNP4403

Abstract: Surface mount NPN/PNP complementary transistor MMDT4413 NPN-4401
Contextual Info: MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • • Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package

Contextual Info: MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT4413 COMPLEMENTARY NPN/PNP TRANSISTOR SOT-363 FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current ICM: 0.2/-0.2 A Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT4413 COMPLEMENTARY NPN/PNP TRANSISTOR SOT-363 FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current 0.2/-0.2 A ICM: Operating and storage junction temperature range

E0C6001

Abstract: E0C6002 E0C6003 E0C6004 S1C60N06 60N01 capasitor 1.2 mf
Contextual Info: MF1114-02 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C60N06 Technical Manual S1C60N06 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

S1C60N14

Abstract: S1C621A0 S1C6200C Y1251
Contextual Info: MF1464-02 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C60N14 Technical Manual S1C60N14 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

S1C60N14

Abstract: S1C621A0 S1C6200C capasitor 1.2 mf 60N01 Q13MC1461 Y1251 MF1464-01
Contextual Info: MF1464-01 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C60N14 Technical Manual S1C60N14 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

1FW 43 transistor

Abstract: TDA 2827 1FW ST 1FW transistor BT 742 S1C621A0 tm03 S1C60N14 1FW 53 1FW 75
Contextual Info: CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C60N14 Technical Manual S1C60N14 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any