K12A60D TRANSISTOR Search Results

K12A60D TRANSISTOR Datasheets Context Search

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k12a60d Contextual Info: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)	Original	TK12A60D k12a60d	PDF
k12a60 Abstract: k12a60d Contextual Info: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)	Original	TK12A60D k12a60 k12a60d	PDF
K12A60D Abstract: TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A Contextual Info: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)	Original	TK12A60D K12A60D TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A	PDF
K12A60D Abstract: TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data Contextual Info: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)	Original	TK12A60D K12A60D TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data	PDF