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    K12A60D CIRCUITS Search Results

    K12A60D CIRCUITS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U54T-M-2500-12-HB4C
    		Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC
    		Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    SCL3400-D01-004
    		Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    SCC433T-K03-PCB
    		Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board Visit Murata Manufacturing Co Ltd
    SCC433T-K03-10
    		Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd

    K12A60D CIRCUITS Datasheets Context Search

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    k12a60d

    Contextual Info: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D k12a60d PDF

    k12a60

    Abstract: k12a60d
    Contextual Info: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D k12a60 k12a60d PDF

    K12A60D

    Abstract: TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A
    Contextual Info: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A PDF

    K12A60D

    Abstract: TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data
    Contextual Info: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data PDF