K-BAND UHF TRANSISTOR Search Results

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2762 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC2762 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.

2SC1200

Abstract: feed through capacitor
Contextual Info: SILICON NPN EPITAXIAL PLANAR TRANSISTOR O UHF - S ^ K I Î J Ü S f f l O UHF ù o il ft X UHF~S Band Power A m p lifie r A p p lic a tio n s . UHF-S Band O s c il l a t o r A p p lic a tio n s . * & f t ^ £ S g T =r V* mm INDUSTRIAL APPLICATIONS l^ o Lx*t> t-t*

2SC3120

Contextual Info: 2SC3120 TO SH IBA 2 S C 3 1 20 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF MIXER APPLICATIONS VHF ~ UHF BAND RF AMPLIFIER APPLICATIONS + 0.5 2 .5 -0 .3 + 0.25 k 1-5 I- MAXIMUM RATINGS Ta = 25°C SYMBOL VCBO VCEO v EBO ic

Contextual Info: TOSHIBA 2SC3862 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3862 TV TUNER, UHF MIXER APPLICATIONS. VH F-U HF BAND RF AMPLIFIER APPLICATIONS. Exchange of Emitter for Base in 2SC3120 MAXIMUM RATINGS Ta = 25°C u HA k ACt .u k IS t IC Collector-Base Voltage

transistor NEC D 587

Abstract: NEC D 587 TRANSISTOR R44 z 607 ma 2SC3585 transistor 5951 nec 1041
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION P A C K A G E DIM ENSIO NS Units: mm The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.

TFSM

Abstract: KTC3730F
Contextual Info: SEMICONDUCTOR KTC3730F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. B D G 2 3 K A Small rbb Cc Typ. 4pS . MAXIMUM RATING (Ta=25 ) SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: TOSHIBA 3SK153 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 <; k 1 * Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS. + 0.2 2 . 9 - Cl3 • Superior Cross Modulation Performance.

KTC3605T

Contextual Info: SEMICONDUCTOR KTC3605T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES K K B DIM A B C D E 1 6 G 2 5 G ・Low Noise Figure, High Gain. 3 4 ・NF=1.1dB, |S21e| =13dB f=1GHz . 2 D F A ・Two internal isolated Transistors in one package.

KTC3605T

Contextual Info: SEMICONDUCTOR KTC3605T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES K K B DIM A B C D E 1 6 G 2 5 G Low Noise Figure, High Gain. 3 4 2 NF=1.1dB, |S21e| =13dB f=1GHz . D F A Two internal isolated Transistors in one package.

Contextual Info: TOSHIBA 3SK153 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 53 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS. + 0.2 2 .9 - tt 3 • Superior Cross Modulation Performance.

KTC3730V

Contextual Info: SEMICONDUCTOR KTC3730V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. Small rbb’Cc Typ. 4pS . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 ) SYMBOL RATING UNIT Collector-Base Voltage

3SK153

Abstract: 52S marking SK153 200-I
Contextual Info: TOSHIBA 3SK153 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 53 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS • • • + 0.2 2 .9 Superior Cross Modulation Performance.

Contextual Info: SEMICONDUCTOR KTC3730V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. Small rbb’Cc Typ. 4pS . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 ) SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: SEMICONDUCTOR KTC3730F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・Low Noise Figure, High Gain. B D G 2 3 K A ・Small rbb’Cc Typ. 4pS . MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage

KTC3620S

Contextual Info: SEMICONDUCTOR KTC3620S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E B L L FEATURES DIM A B C D E G H J K L M N P Q ・High Gain. D ・Low Noise Figure. 3 G H A 2 1 Q J K MAXIMUM RATING Ta=25℃ CHARACTERISTIC P

313-105

Abstract: 2SK3179 ET 8211 0737 8178 0.514 740 1025 5688 el 7406
Contextual Info: TOSHIBA 2SK3179 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2 S K 3 1 79 UHF-SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Gate-Drain Voltage

Contextual Info: SEMICONDUCTOR KTC3730F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・Small rbb Cc Typ. 4pS . B D G 2 3 K A ・Low Noise Figure, High Gain. MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage

KTC3770V

Abstract: transistor j50 marking s22
Contextual Info: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. B D G 2 3 K A NF=1.1dB, |S21e|2=11dB f=1GHz . MAXIMUM RATING (Ta=25 1 SYMBOL RATING UNIT Collector-Base Voltage

j50 transistor

Contextual Info: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・Low Noise Figure, High Gain. B D G 2 3 K A ・NF=1.1dB, |S21e|2=11dB f=1GHz . MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage

KTC3770V

Contextual Info: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: SEMICONDUCTOR KTC3640V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E FEATURES B ・Low Noise Figure, High Gain. ・NF=1.4dB, S21e 2=9.0dB 2GHz D G H A 2 1 K 3 MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・NF=1.1dB, |S21e|2=11dB f=1GHz . B D G 2 3 K A ・Low Noise Figure, High Gain. MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage

SD1492

Abstract: M 208
Contextual Info: SD1492 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1492 is a Common Emitter Device Designed for Class AB operation in UHF Amplifier Applications in Television Band IV & V Transmitters. PACKAGE STYLE .450 BAL FLG. A A FULL R TJ .050 NOM. G H I J K