FH2164
Abstract: No abstract text available
Text: FH2164 SILICON N-CHANNEL RF POWER MOSFET PACKAGE STYLE 400 BAL FLG B A B C D E DESCRIPTION: The ASI FH2164 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz. F G MAXIMUM RATINGS ID 4.0 A VDS 50 V PDISS H 1 = SOURCE = FLANGE, O 2 = CHAMFERED 45 LEADS = DRAIN
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FH2164
FH2164
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irf 739 mosfet
Abstract: mosfet irf 380 EIA-541 Si4410DYPbF ic power so 8 single mosfet
Text: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced
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Si4410DYPbF
800mW
EIA-481
EIA-541.
irf 739 mosfet
mosfet irf 380
EIA-541
ic power so 8 single mosfet
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irf 739 mosfet
Abstract: IRF 740 PD-94837
Text: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS l Lead-Free Benefits l Low Gate Charge Qg results in Simple
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PD-94837
IRFIB5N65APbF
O-220
irf 739 mosfet
IRF 740
PD-94837
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EIA-541
Abstract: Si4410DYPbF
Text: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced
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Si4410DYPbF
800mW
EIA-481
EIA-541.
EIA-541
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Untitled
Abstract: No abstract text available
Text: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced
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Si4410DYPbF
800mW
EIA-481
EIA-541.
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Untitled
Abstract: No abstract text available
Text: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS l Lead-Free Benefits Low Gate Charge Qg results in Simple
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PD-94837
IRFIB5N65APbF
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS l Lead-Free Benefits Low Gate Charge Qg results in Simple
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PD-94837
IRFIB5N65APbF
O-220
08-Mar-07
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power mosfet so8 FL
Abstract: 2F 1 marking irf 739 mosfet IRF P CHANNEL MOSFET PN channel MOSFET 10A HEXFET SO-8 logic level n channel MOSFET tu marking MS-012AA Si4410DY
Text: PD - 91853B Si4410DY HEXFET Power MOSFET l l l l l N-Channel Mosfet Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N channel MOSFET is produced using International
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91853B
Si4410DY
800mW
power mosfet so8 FL
2F 1 marking
irf 739 mosfet
IRF P CHANNEL MOSFET
PN channel MOSFET 10A
HEXFET SO-8
logic level n channel MOSFET
tu marking
MS-012AA
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Untitled
Abstract: No abstract text available
Text: PD - 91853A Si4410DY HEXFET Power MOSFET l l l l l N-Channel Mosfet Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N channel MOSFET is produced using International
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1853A
Si4410DY
800mW
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1N4690
Abstract: capacitor c3a capacitor c3b MAX736 MAX737 MAX739 MAX759 MAX737CPD ZENER DIODE J3 MAX736cpd
Text: M A X 739 E valuation K it Features ♦ Output Voltage: -12V MAX736 -15V (MAX737) -5V (MAX739) Adjustable, OV to -15V (MAX759) The EV kit contains a printed circuit board and all com ponents needed to evaluate an application circuit. The PC board is common to the MAX736/MAX737/MAX739/
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MAX739
MAX736/MAX737/MAX739/
MAX759.
MAX736/MAX737/MAX739
MAX759
MAX736/MAX737)
MAX739/wn
MAX736
MAX737
1N4690
capacitor c3a
capacitor c3b
MAX737CPD
ZENER DIODE J3
MAX736cpd
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IRCZ44
Abstract: IRC540 IRC530 IRC640 IRC644 IRC740 IRC840 N6050
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH 3M C Topbi MOSFET b K opnyce C B03M 0M H 0CTbro KOHTpOHfl M 3a^ M Tbl TpaH3MCTopw M O S F E T cepMM IR C n M e ro T flB a flo n o n H M T e n b H H X BbiBOfla, no3Borm ww,mx pea^M 30BHBaTb #yHKU,Mro orpaHMHeHMfl TOKa m K o m p o rm TeM nepaTypw .
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T02205
B03M0WH0CTbW
MxpeanM30BbiBaTb(
IRC540
IRC640
IRC644
IRC740
IRCZ44
IRC530
IRC840
N6050
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SOT227B
Abstract: STE15NA100 STE180NE10 STE24NA100 STE26NA90 STE40NA60
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su jen\ 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b Kopnyce SOT-227B (ISOTOP) $ up M b i Microelectronics C # e p a npM M eH eH M a: n p M B O flH w e C M C T e M b i, 6 jio k m n M T a H M ^ UPS, 6 n o K M riM T a H M A c n p e o 6 p a 3 0 B a H M e M
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OT-227B
npe06pa30BaHMeM
npe06pa30Baienm
flMana30H
ot-55Â
STE15NA100
STE24NA100
STE26NA90
STE40NA60
STE180NE10
SOT227B
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IXTN79N20
Abstract: IXFN48N50 IXFN120N20 IXFN27N80 IXFN36N60 IXFN73N30 IXTN21N100 IXFN106N20 IXFN130N30 IXFN150N15
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b K o p n y c e SOT-227B (ISOTOP) $ M pM bi IXYS C # e p a npM M eH eH M a: n p e o 6 p a 3 0 B a ie n M D C-DC, n po M biw ne rn-ib ie MMnynbCHbie 6jiokm nMTaHMfl, cucTeM bi
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OT-227B
npe06pa30Baienm
flMana30H
ot-55Â
IXTN21N100
IXFN27N80
IXFN36N60
IXFN48N50
IXFN55N50
IXFN130N30
IXTN79N20
IXFN120N20
IXFN73N30
IXFN106N20
IXFN150N15
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Untitled
Abstract: No abstract text available
Text: P U L S E W ID T H M O D U LA T IO N A M P L IF IE R S APÉX M I C R O T E C H N O L O G Y SA07 HTTP://W W W .APEXMICROTECH.COM 800 546-APEX (800) 5 4 6 - 2 739 FEATURES • • • • • • • • 5 0 0 k H z SWITCHING FU LL BRIDGE OUTPUT 5 -4 0 V (8 0 V P-P)
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546-APEX
500kHz
SA07U
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nf 739 mosfet
Abstract: No abstract text available
Text: 19-4749; Rev 3; 5/93 J V I \/ r A \A A -5V, -12V, -15V, an d A djustable Inverting Current-Mode PWM Regulators The MAX736/MAX737/MAX739 have fixed outputs of -12V, -15V, and -5V respectively. The MAX759 is adjustable from OV to -15V. Output voltages beyond -15V require a transformer.
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MAX736/MAX737/MAX739
MAX759
165kHz,
X739EPD
MAX739EWE
MAX739MJD
MAX759CPD
MAX759CWE
MAX759C/D
MAX759EPD
nf 739 mosfet
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marking BSs mosfet
Abstract: No abstract text available
Text: SIPMOS N Channel MOSFET BSS 131 • SIPMOS - enhancement mode • Drain-source voltage K>* = 240V • Continuous drain current / 0 = 0.10A • Drain-source on-resistance • Total power dissipation %«on> = 16.00 PD = 0.36W Type Marking Ordering code for versions on 8 mm-tape
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Q62702-S565
fp20yi
marking BSs mosfet
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Untitled
Abstract: No abstract text available
Text: 35E D • fl23k3EG QG171bl fl « S I P SIPMOS N Channel MOSFET BSS131 T ' 3 S - ‘XS' SIEMENS/ SPCL-, SEMICONDS • SIPMOS - enhancement mode • Drain-source voltage Vfct = 240V • Continuous drain current l 0 = 0.10A • Oraln-source on-reslstance • Total power dissipation
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fl23k3EG
QG171bl
BSS131
Q62702-S565
53b32G
00171bb
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DN-12
Abstract: No abstract text available
Text: A J ÎK c w m a n A M P com pany RF MOSFET Power Transistor, 15W, 12V 2 - 1 7 5 MHz DU1215S Features • • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
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DU1215S
5-80pF
4-40pF
001uF
1000pF
DU1215S
DN-12
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION First P age of D ata S heet in P reparation - 5 V In v e rtin g C urrent-M ode PW M R egulators _ Features ♦ Converts Positive Voltages to Negative A high -p e rfo rm a n ce , c u rre n t-m o d e PWM c on trol schem e
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AX739
MAX735
AX735M
AX755
AX739EW
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Untitled
Abstract: No abstract text available
Text: M &CÔM m an A M P com pany RF MOSFET Power Transistor, 20W, 28V 2 - 1 7 5 MHz DU2820S Features • • • • • N-Channel Enh ancem en t Mode Device DMOS Structure I.ower C apacitances for Broadband O peration High Saturated O utput Pow er I.ower Noise Figure Than Bipolar Devices
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DU2820S
5-80pF
3-30pF
DU2S20S
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Untitled
Abstract: No abstract text available
Text: PD-91816 International IÖR Rectifier sMPs MosFET IRFIB5N65A HEXFET Power MOSFET A pplications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed pow er switching • High V oltage Isolation = 2.5K V R M S V dss 650V
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PD-91816
IRFIB5N65A
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PTF10026
Abstract: U016 10026 IEC-68-2-54
Text: ERICSSON ^ PTF 10026 6 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation
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IEC-68-2-54
Std-002-A
P4917-ND
P5276
5701-PC
20AWG,
PTF10026
U016
10026
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Untitled
Abstract: No abstract text available
Text: PD -91815A International lö R Rectifier sMPs MosFET IR F B 9 N 6 5 A HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V dss 650V Rds(on) max 0.93Î2 Id 8.5 A Benefits
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-91815A
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KY 719
Abstract: 122JK TB163TK TB143TK
Text: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75
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2SK1973F5
2SK2041
2SK2042
2SK2094F5
2SK2103
2SA1036K
2SA1037AK
2SA1037AKLN
2SA1455K
RU101
KY 719
122JK
TB163TK
TB143TK
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